Extensive Raman spectroscopy studies combined with scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) measurements were performed to investigate structural and chemical changes in diamond layers deposited by chemical vapour deposition (CVD) upon post-growth treatment with hydrogen. The aim of this study is to characterize the changes in micro-structural properties of diamond layers with different grain sizes and different contents of sp² carbon phase. Hydrogenation or oxidization of diamond layer surface is often performed to modify its properties; however, it can also strongly affect the surface structure. In this study, the impact of hydrogenation on the structure of diamond layer surface and its chemical composition is investigated. Owing to their polycrystalline nature, the structural properties of CVD diamond layers can strongly differ within the same layer. Therefore, in this project, in order to compare the results before and after hydrogen treatment, the diamond layers are subjected to Raman spectroscopy studies in the vicinity of a T-shape marker fabricated on the surface of each diamond layer studied.

The work presents the effect of annealing on the change of polycrystalline α and β phases of copper and nickel phthalocyanines. We have found that this process has a great influence on the optical properties of the vapor-deposited layers. The performed measurements showed that for various forms of MPc, the values of the refractive index and the extinction coefficient increased, and consequently, so did the absorption coefficient. The AFM images taken showed that the values before and after heating are morphologically different. Raman measurements showed that the band at about 1526 cm⁻¹ (B1g symmetry) has higher intensity for the α form than for the β form. The intensity of this band is related to changing the form of phthalocyanine from α to β. Our measurements have shown that by changing the annealing temperature of the layers, we change their optical properties. As a consequence, we change their optoelectronic parameters, adjusting them to the requirements of new optoelectronic devices, such as solar cells, sensors, displays and OLEDs.