We demonstrated a multi-band plasmonic metamaterial absorber (MA), based on the near-field coupled resonators. In addition to the individual resonances of resonators in the proposed structure, which were split-ring resonator (SRR) and cross-shape structures, another resonance was also excited owing to the coupling of resonators, revealing a triple-band absorption. Furthermore, to control the absorption behavior, on the top of the SRRs, the identical SRRs made of graphene ink were pasted. By increasing the resistance of graphene ink, the coupling strength was weakened, changing the triple-band absorption to a dual-band one. Our work might be useful as the controllable devices, based on graphene-integrated plasmonic MA, such as filters, detectors and energy harvesters.

We present a systematic study of the fundamental optical properties of indium selenide (InSe) single crystals over a temperature range of 17 K to 300 K. The high structural quality of the β-polytype crystals was confirmed through X-ray diffraction, Raman spectroscopy, and high-resolution transmission electron microscopy, demonstrating excellent crystallinity and a nearly stoichiometric In:Se ratio. The temperature-dependent absorption and photoluminescence (PL) spectra are characterized by a prominent free exciton (FX) resonance. At 17 K, the photoluminescence spectrum exhibits a distinct fine-structure splitting of the Wannier–Mott exciton, yielding a triplet state at 1.333 eV and a singlet state at 1.336 eV. Additionally, a biexciton (XX) is localized at an energy of 1.322 eV as confirmed by the nonlinear dependence of intensity on excitation power density. At low temperatures, the absorption spectrum exhibits the free exciton ground state (n = 1) at 1.338 eV together with the first excited state (n = 2) at 1.350 eV. We systematically tracked and analyzed the temperature evolution of these quasiparticle energies. These findings enhance our understanding of the intrinsic many-body interactions in high-quality InSe, providing essential parameters for advancing its applications in innovative optoelectronic and quantum light-emitting devices.