The development of transparent electronics has advanced metal–oxide–semiconductor Thin-Film transistor (TFT) technology. In the field of flat-panel displays, as basic units, TFTs play an important role in achieving high speed, brightness, and screen contrast ratio to display information by controlling liquid crystal pixel dots. Oxide TFTs have gradually replaced silicon-based TFTs owing to their field-effect mobility, stability, and responsiveness. In the market, n-type oxide TFTs have been widely used, and their preparation methods have been gradually refined; however, p-Type oxide TFTs with the same properties are difficult to obtain. Fabricating p-Type oxide TFTs with the same performance as n-type oxide TFTs can ensure more energy-efficient complementary electronics and better transparent display applications. This paper summarizes the basic understanding of the structure and performance of the p-Type oxide TFTs, expounding the research progress and challenges of oxide transistors. The microstructures of the three types of p-Type oxides and significant efforts to improve the performance of oxide TFTs are highlighted. Finally, the latest progress and prospects of oxide TFTs based on p-Type oxide semiconductors and other p-Type semiconductor electronic devices are discussed.

Additive Manufacturing (AM) is revolutionizing aerospace, transportation, and biomedical sectors with its potential to create complex geometries. However, the metallic materials currently used in AM are not intended for high‐energy beam processes, suggesting performance improvement. The development of materials for AM still faces challenge because of the inefficient trial‐and‐error conventional methods. This review examines the challenges and current state of materials including aluminum alloys, titanium alloys, superalloys, and high‐entropy alloys (HEA) in AM, and summarizes the high‐throughput methods in alloy development for AM. In addition, the advantages of high‐throughput preparation technology in improving the properties and optimizing the microstructure mechanism of major additive manufacturing alloys are described. This article concludes by emphasizing the importance of high‐throughput techniques in pushing the boundaries of AM materials development, pointing toward a future of more effective and innovative material solutions.