Chih Chen

Dr. Chih Chen

Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
orcid

Research Focus & Metrics

Academic Career Length

21Years (2006-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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25 May 2012 in Science
Verified
Journal Article
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HHHsiang-Yao Hsiao
Hsiang-Yao Hsiao
CLChien-Min Liu
Chien-Min Liu
HLHan-Wen Lin
Han-Wen Lin
TLTao-Chi Liu
Tao-Chi Liu
CLChia-Ling Lu
Chia-Ling Lu
KTK. N. Tu
K. N. Tu
Tiny Tinny Bumps: One challenge in moving to three-dimensional integrated circuit architectures is the need for aligned interconnects to join neighboring layers. Hsiao et al. (p. 1007 ) applied rapid stirring to the direct current electroplating of copper to produce films with oriented copper grains that have a high density of nanotwin defects. The resulting material was an excellent platform for the growth of copper-tin intermetallic compounds in the form of arrays of microbumps potentially suitable for the soldering of electronic components.

1 June 2010 in Annual Review of Materials Research
Verified
Journal Article
Closed access
Chih ChenChih Chen
Chih Chen
HTH.M. Tong
H.M. Tong
KTK.N. Tu
K.N. Tu
Pb-free solders have replaced Pb-containing SnPb solders in the electronic packaging industry due to environmental concerns. Both electromigration (EM) and thermomigration (TM) have serious reliability issues for fine-pitch Pb-free solder bumps in the flip-chip technology used in consumer electronic products. We review the unique features of EM and TM in flip-chip solder bumps, emphasizing the effects of current crowding and Joule heating. In addition, the challenges to a better understanding of EM and TM in Pb-free solders are discussed. For example, the anisotropic nature of Sn microstructure in Pb-free solders can enhance the dissolution rates of Ni and Cu in solders driven by EM and TM.

12 May 2015 in Scientific Reports
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Journal Article
Open access
CLChien-Min Liu
Chien-Min Liu
HLHan-Wen Lin
Han-Wen Lin
YHYi-Sa Huang
Yi-Sa Huang
YCYi-Cheng Chu
Yi-Cheng Chu
Chih ChenChih Chen
Chih Chen
KTKing-Ning Tu
King-Ning Tu
Direct Cu-to-Cu bonding was achieved at temperatures of 150–250 °C using a compressive stress of 100 psi (0.69 MPa) held for 10–60 min at 10−3 torr. The key controlling parameter for direct bonding is rapid surface diffusion on (111) surface of Cu. Instead of using (111) oriented single crystal of Cu, oriented (111) texture of extremely high degree, exceeding 90%, was fabricated using the oriented nano-twin Cu. The bonded interface between two (111) surfaces forms a twist-type grain boundary. If the grain boundary has a low angle, it has a hexagonal network of screw dislocations. Such network image was obtained by plan-view transmission electron microscopy. A simple kinetic model of surface creep is presented; and the calculated and measured time of bonding is in reasonable agreement.

12 September 2012 in Crystal Growth & Design
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Journal Article
Closed access
TLTao-Chi Liu
Tao-Chi Liu
CLChien-Min Liu
Chien-Min Liu
HHHsiang-Yao Hsiao
Hsiang-Yao Hsiao
JLJia-Ling Lu
Jia-Ling Lu
YHYi-Sa Huang
Yi-Sa Huang
Chih ChenChih Chen
Chih Chen

17 September 2018 in Scientific Reports
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Journal Article
Open access
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JJJing-Ye Juang
Jing-Ye Juang
CLChia-Ling Lu
Chia-Ling Lu
KCKuan-Ju Chen
Kuan-Ju Chen
CCChao-Chang A. Chen
Chao-Chang A. Chen
PHPo-Ning Hsu
Po-Ning Hsu
KTK. N. Tu
K. N. Tu
A vacuum-free Cu-to-Cu direct bonding by using (111)-oriented and nanotwinned Cu has been achieved. A fast bonding process occurs in 5 min under a temperature gradient between 450 and 100 °C. It is verified by grain growth across the bonded interface. To investigate the grain growth behavior, further annealing in the temperature gradient, as well as in a reversed temperature gradient, was performed. They showed similar recrystallization behavior with de-twinning. To analyze the de-twinning, we recall the classic model of annealing twin formation by Fullman and Fisher as comparison. Our case is opposite to the model of Fullman and Fisher. A mechanism of direct bonding by surface diffusion creep is proposed.

1 November 2021 in Journal of Materials Research and Technology
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Journal Article
Open access
KSKai-Cheng Shie
Kai-Cheng Shie
AGAndriy Gusak
Andriy Gusak
KTK.N. Tu
K.N. Tu
Chih ChenChih Chen
Chih Chen