In this paper, we report a physics-based compact model for monolayer graphene field-effect transistors (m-GFETs) based on the 2-D Density of States of monolayer graphene and the drift-diffusion equation. Furthermore, the Ward-Dutton charge partitioning scheme has been incorporated to the model extending its capabilities to AC and transient simulations. The model has been validated through comparison with DC and RF measurements from two different long-channel m-GFET technologies. Moreover, values of parasitic elements included in the model are extracted from measurements on dedicated test structures and verified through electromagnetic simulations (EM). Finally, an EM-SPICE co-simulation has been carried out to assess the applicability of the developed m-GFET model for the design of “balun” circuits.

This paper focuses on efficient reliability analysis methodologies applicable for beyond-5G communication systems demonstrated on prospective terahertz (THz) technologies. Recently, a lot of the research interests have grown on optoelectronic integration which requires simultaneous management of electronic and optical modules. These technologies are evolving very rapidly, providing higher complexity, thereby increasing their susceptibility to stress environments (i.e., mutual self-heating) and finally requiring both robustness assessment and lifetime prediction under different operating conditions. Consequently, long-time reliability is a major issue. Extensive reliability assessment needs novel design methodologies that can provide reliability-aware optimization at the design level. This review discusses an extensive physics-based methodology for reliability prediction and analysis of degradation mechanisms in integrated-circuit technologies. Circuit-level design and optimization methodologies are illustrated by taking into account reliability-aware design techniques. Application examples and results are presented for an InP DHBT process, a viable technological solution for beyond-5G and THz applications.

This review paper reports the prerequisites of a monolithic integrated terahertz (THz) technology capable of meeting the network capacity requirements of beyond-5G wireless communications system (WCS). Keeping in mind that the terahertz signal generation for the beyond-5G networks relies on the technology power loss management, we propose a single computationally efficient software design tool featuring cutting-edge optical devices and high speed III–V electronics for the design of optoelectronic integrated circuits (OEICs) monolithically integrated on a single Indium-Phosphide (InP) die. Through the implementation of accurate and SPICE (Simulation Program with Integrated Circuit Emphasis)-compatible compact models of uni-traveling carrier photodiodes (UTC-PDs) and InP double heterojunction bipolar transistors (DHBTs), we demonstrated that the next generation of THz technologies for beyond-5G networks requires (i) a multi-physical understanding of their operation described through electrical, photonic and thermal equations, (ii) dedicated test structures for characterization in the frequency range higher than 110 GHz, (iii) a dedicated parameter extraction procedure, along with (iv) a circuit reliability assessment methodology. Developed on the research and development activities achieved in the past two decades, we detailed each part of the multiphysics design optimization approach while ensuring technology power loss management through a holistic procedure compatible with existing software tools and design flow for the timely and cost-effective achievement of THz OEICs.