Henri Happy

Dr. Henri Happy

orcid

Research Focus & Metrics

Academic Career Length

37Years (1990-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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15 June 2009 in Applied Physics Letters
Verified
Journal Article
Closed access
LNL. Nougaret
L. Nougaret
HHHenri Happy
Henri Happy
GDG. Dambrine
G. Dambrine
VDV. Derycke
V. Derycke
JBJ. -P. Bourgoin
J. -P. Bourgoin
MHM. C. Hersam
M. C. Hersam
This paper presents the high frequency performance of single-walled carbon nanotube (SWNT) field-effect transistors, with channel consisting of dense networks of high purity semiconducting SWNTs. Using SWNT samples containing 99% pure semiconducting SWNTs, we achieved operating frequencies above 80 GHz. This record frequency does not require aligned SWNTs, thus demonstrating the remarkable potential of random networks of sorted SWNTs for high frequency electronics.

25 May 2020 in Nature Electronics
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Journal Article
Closed access
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MKMyungsoo Kim
Myungsoo Kim
Emiliano PallecchiEmiliano Pallecchi
Emiliano Pallecchi
RGRuijing Ge
Ruijing Ge
XWXiaohan Wu
Xiaohan Wu
GDGuillaume Ducournau
Guillaume Ducournau
DADeji Akinwande
Deji Akinwande

27 January 2012 in Nano Letters
Verified
Journal Article
Closed access
CSCédric Sire
Cédric Sire
FAFlorence Ardiaca
Florence Ardiaca
SLSylvie Lepilliet
Sylvie Lepilliet
JSJung-Woo T. Seo
Jung-Woo T. Seo
MHMark C. Hersam
Mark C. Hersam
VDVincent Derycke
Vincent Derycke

1 December 2013 in Biosensors and Bioelectronics
Verified
Journal Article
Closed access
Palaniappan SubramanianPalaniappan Subramanian
Palaniappan Subramanian
ALAdam Lesniewski
Adam Lesniewski
IKIzabela Kaminska
Izabela Kaminska
AVAlexis Vlandas
Alexis Vlandas
Alina VasilescuAlina Vasilescu
Alina Vasilescu
SSSabine Szunerits
Sabine Szunerits

1 March 1993 in IEEE Transactions on Microwave Theory and Techniques
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Journal Article
Closed access
GDG. Dambrine
G. Dambrine
HHHenri Happy
Henri Happy
FDFrançois DANNEVILLE
François DANNEVILLE
ACA. Cappy
A. Cappy

12 April 2013 in IEEE Transactions on Nanotechnology
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Journal Article
Closed access
SFSébastien Frégonèse
Sébastien Frégonèse
MMMaura Magallo
Maura Magallo
CMCristell Maneux
Cristell Maneux
HHHenri Happy
Henri Happy
TZThomas Zimmer
Thomas Zimmer
A new scalable electrical compact model for the Graphene FET devices is proposed. Starting from Thiele's quasianalytical model, the equations are modified to be fully compatible with SPICE-like circuit simulation. Compared to Meric et al. model, the charge model is improved. This large signal model has been implemented in Verilog-A code and can be used for simulation in a standard circuit design environment such as Cadence or ADS. This model has been verified using different measurements from the literature, and furthermore, its scalability is demonstrated.