Visible light communication (VLC), combining wireless communication with white lighting, has many advantages. It is free of electromagnetic interference, is rich in spectrum resources, and has a gigabit-per-second (Gbps) data rate. Laser diodes (LDs) are emerging as promising light sources for high-speed VLC communication due to their high modulation bandwidth. In this paper, we demonstrate a red/green/blue (R/G/B) LDs based VLC system with a recorded data rate of 46.41 Gbps, employing discrete multitone (DMT) and adaptive bit-loading technology to achieve high spectral efficiency (SE). The emission characteristics and transmission performance of R/G/B-LDs are discussed. The optimal data rates of R/G/B-LDs channels are 17.168/14.652/14.590 Gbps, respectively. The bit-error-ratio (BER) of each channel satisfies the 7% forward-error-correction (FEC) threshold (3.8×10⁻³) and greatly approaches the channel Shannon limit.

High-speed visible light communication (VLC) using light-emitting diodes (LEDs) is a potential complementary technology for beyond-5G wireless communication networks. The speed of VLC systems significantly depends on the quality of LEDs, and thus various novel LEDs with enhanced VLC performance increasingly emerge. Among them, InGaN/GaN-based LEDs on a Si-substrate are a promising LED transmitter that has enabled VLC data rates beyond 10 Gbps. The optimization on the period number of superlattice interlayer (SL), which is a stress-relief epitaxial layer in a Si-substrate LED, has been demonstrated to be an effective method to improve Si-substrate LED’s luminescence properties. However, this method to improve LED’s VLC properties is barely investigated. Hence, we for the first time experimentally studied the impact of SL period number on VLC performance. Accordingly, we designed and fabricated an integrated 4 × 4 multichromatic Si-substrate wavelength-division-multiplexing LED array chip with optimal SL period number. This chip allows up to 24.25 Gbps/1.2 m VLC transmission using eight wavelengths, which is the highest VLC data rate for an InGaN/GaN LED-based VLC system to the best of our knowledge. Additionally, a record-breaking data rate of 2.02 Gbps over a 20-m VLC link is achieved using a blue Si-substrate LED with the optimal SL period number. These results validate the effectiveness of Si-substrate LEDs for both high-speed and long-distance VLC and pave the way for Si-substrate LED design specially for high-speed VLC applications.

The quantum efficiency of GaN-based micro-light-emitting diodes (micro-LEDs) is of great significance for their luminescence and detection applications. Optimized passivation process can alleviate the trapping of carriers by sidewall defects, such as dangling bonds, and is regarded as an effective way to improve the quantum efficiency of micro-LEDs. In this work, an AlN passivation layer was prepared by atomic layer deposition to improve the electro-optical and photoelectric conversion efficiency in GaN-based micro-LEDs. Compared to conventional Al₂O₃ passivation, the AlN passivation process has a stronger ability to eliminate the sidewall defects of micro-LEDs due to the homogeneous passivation interface. Our experiments show that the AlN-passivated device exhibits two orders of magnitude lower forward leakage and a smaller ideality factor, which leads to significantly enhanced external quantum efficiency (EQE). For 25*25 μm² micro-LEDs, the EQE of the AlN-passivated device was 18.3% and 57.7% higher than that of the Al₂O₃-passivated device in luminescence application and detection application, respectively.