The availability of new-generation femtosecond lasers capable of delivering pulses with energies in the hundreds of mJ, or even in the joules range, has called for a revision of the effect of scaling spot size on the material distribution within the plasma plume. Employing a state-of-the-art Szatmári-type hybrid dye-excimer laser system emitting 248 nm pulses with a maximum energy of 20 mJ and duration of 600 fs, copper films were grown in the classical pulsed laser deposition geometry. The exceptionally clean temporal profile of the laser pulses yielded a femtosecond component of 4.18 ± 0.19 mJ, accompanied by a 0.22 ± 0.01 mJ ASE pedestal on the target surface. While varying the spot sizes, the plasma plume consistently exhibited an extremely forward-peaked distribution. Deposition rates, defined as peak thickness per number of pulses, ranged from 0.030 to 0.114 nm/pulse, with a gradual narrowing of the thickness distribution as the spot area increased from 0.085 to 1.01 mm² while keeping the pulse energy constant. The material distribution on the silicon substrates was characterized using the f(Θ) = Acos^kΘ + (1 − A)cos^pΘ formalism, revealing exponents characterizing the forward-peaked component of the thickness profile of the film material along the axes, ranging from k = 15 up to exceptionally high values exceeding 50, as the spot area increased. Consequently, spot size control and outstanding beam quality ensured that majority of the ablated material was confined to the central region of the plume, indicating the potential of PLD (pulsed laser deposition) for highly efficient localized deposition of exotic materials.

Copper thin films are intended to serve as a cover layer of photocathodes that are deposited by ablating copper targets in a high vacuum by temporally clean 600 fs laser pulses at 248 nm. The extremely forward-peaked plume produced by the ultrashort UV pulses of high-energy contrast ensures fast film growth. The deposition rate, defined as peak thickness per number of pulses, rises from 0.03 to 0.11 nm/pulse with an increasing ablated area while keeping the pulse energy constant. The material distribution over the surface-to-be-coated can also effectively be controlled by tuning the dimensions of the ablated area: surface patterning from airbrush-like to broad strokes is available. The well-adhering films of uniform surface morphology consist of densely packed lentil-like particles of several hundred nm in diameter and several ten nm in height. Task-optimized ultrashort UV laser deposition is thereby an effective approach for the production of thin film patterns of predetermined geometry, serving e.g., as critical parts of photocathodes.

Temporal cleaning of high-power infrared (IR) pulses generated by a Ti:Sapphire system is demonstrated by the use of the Nonlinear Fourier Filtering (NFF) method. In a proof-of-principle experiment suppression of up to 1000 is achieved for the temporal pedestal prior to the main pulse, with a moderate (20-25%) overall throughput. This includes the same suppression ratio for the picosecond coherent pedestal in the direct vicinity of the main pulse. Based on the instantaneous, intensity-dependent and high-order switching characteristics of NFF, excellent pulse cleaning performance is observed. The efficient, high-contrast removal of the coherent pedestal from the foot of the main pulse even if its duration is shorter than 100 fs is compared with the capability of the plasma mirror technique. Calculations are also performed, supporting the experimentally observed sharp intensity dependence of the switching process, pointing out the dominant role of the ionization-based refractive index change.

In high-brightness excimer systems, the direct amplification of short pulses allows temporal filters to be integral parts of the ultraviolet (UV) amplifier chain, where the only origin of the noise is the amplified spontaneous emission (ASE), generated by the amplifier(s) following the filter. The ASE, however, develops faster than the short main pulse; in this paper, the dynamic short- and long-pulse amplification properties of KrF, XeCl and XeF excimers are studied, with special emphasis on the temporal contrast. It was found that, beyond the saturation of amplification, the relaxation of the B state in KrF, together with the contribution of the absorption of the transiently populated X state in XeCl and XeF, are the main limitations for both the extraction efficiency and the contrast. For all excimers, the stimulated transition rates and the dependence of the achievable contrast on the level of saturation were derived. Local quantities were introduced to characterize the deterioration of the contrast for a unit gain length of KrF amplifiers. A KrF power amplifier of limited gain (G ≈ 3), following the newly introduced nonlinear Fourier filter, is capable of reaching contrast levels beyond the previously reported 10¹¹–10¹².

We have experimentally demonstrated low-voltage (35 $-$ 45 kV) capillary Z-pinches with a short rise time ( $>$ 10 $^{12}$ A/s) and high current amplitude (up to 16 kA) suited for pumping portable soft X-ray (46.9 nm) Ar $^{8+}$ lasers. We employed a thyratron-driven LC inversion circuit completed by magnetic switch compressor (MSC) technology. The inversion time is synchronized to the switching of the MSC by the proper choice of circuit inductance and the cross section of the core of the MSC surrounded by a “spatially distributed coil” of one winding for the given value (80 nF) of the main capacitor bank, determined by the electric energy to be transferred. The peaking capacitance (44 nF) is distributed around the axis of the spark gap (SG) and the cylindrical capillary-discharge chamber. At a power supply voltage of 25 kV, this charging circuit produced a 45-kV electric pulse with a rise time of 120 ns on the peaking capacitor. The measured capillary Z-pinch characteristics agree well with our model of the electric excitation system. The low voltage (35 $-$ 45 kV) not only allows for a further decrease in the size of the Ar $^{8+}$ laser’s excitation part but also a significant shift to the experimental methods, techniques, and technologies widely employed in ordinary discharge-pumped gas lasers operating in the long-wavelength regions of the spectra. Using the low-voltage (45 kV) Z-pinches in an Ar-filled alumina capillary with an inner diameter of 3.1 mm and a length of 22 cm, 46.9-nm laser pulses with an energy of 3 $\mu $ J and a beam divergence of 1.9 mrad were generated.