We propose a generally applicable velocity matching method for THz-pulse generation by optical rectification in the range below the phonon frequency of the nonlinear material. Velocity matching is based on pulse front tilting of the ultrashort excitation pulse and is able to produce a large-area THz beam. Tuning of the THz radiation by changing the tilt angle is experimentally demonstrated for a narrow line in the range between 0.8-0.97 times the phonon frequency. According to model calculations broadband THz radiation can be generated at lower frequencies. Advantages of the new velocity matching technique in comparison to the electro-optic Cherenkov effect and non-collinear beam mixing are discussed.

We report a semiconductor contact grating terahertz source design based on a rectangular profile for phase-matched terahertz generation in the long infrared pump wavelength range. The calculations show that the best diffraction efficiency can be achieved by a filling factor significantly smaller than 50%. Furthermore, the possibility of diffraction efficiency enhancement was investigated by applying three different antireflective coating structures. Numerical simulations have indicated that at 2.06 $\mathsf{\mu }$m and 3.0 μm pump wavelength, diffraction efficiencies greater than 91% and 89% can be achieved by adding an appropriate antireflective coating to the GaP and GaAs contact grating structure, respectively. In addition, numerical simulations were performed to investigate the influence of wall angles on diffraction efficiency. The results reveal that the wall angle does not significantly affect the diffraction efficiency: while keeping the wall angle deviation from the vertical below 25 degrees, the efficiency drop remains below 5% for otherwise optimal grating parameters.

In high-brightness excimer systems, the direct amplification of short pulses allows temporal filters to be integral parts of the ultraviolet (UV) amplifier chain, where the only origin of the noise is the amplified spontaneous emission (ASE), generated by the amplifier(s) following the filter. The ASE, however, develops faster than the short main pulse; in this paper, the dynamic short- and long-pulse amplification properties of KrF, XeCl and XeF excimers are studied, with special emphasis on the temporal contrast. It was found that, beyond the saturation of amplification, the relaxation of the B state in KrF, together with the contribution of the absorption of the transiently populated X state in XeCl and XeF, are the main limitations for both the extraction efficiency and the contrast. For all excimers, the stimulated transition rates and the dependence of the achievable contrast on the level of saturation were derived. Local quantities were introduced to characterize the deterioration of the contrast for a unit gain length of KrF amplifiers. A KrF power amplifier of limited gain (G ≈ 3), following the newly introduced nonlinear Fourier filter, is capable of reaching contrast levels beyond the previously reported 10¹¹–10¹².

A laser-plasma accelerator based carrier-envelope-phase stable attosecond source is investigated numerically. Pulses with tens-of-nJ energy and 90 to 240 attosecond duration are predicted in the 30–120 nm wavelength range.

A nonlinear echelon slab structure is proposed for high-energy THz pulse generation. The most important advantage of the setup is the possibility of using plane parallel nonlinear optical crystal for producing good-quality, symmetric THz beam.

A monolithic contact-grating semiconductor source and a hybrid LiNbO₃ stair-step echelon are presented for efficient THz pulse generation by optical rectification. They enable excellent focusability of the THz beams and are scalable to mJ-level THz pulse energies.