Layered semiconductors such as transition metal dichalcogenides (TMDs) offer endless possibilities for designing modern photonic and optoelectronic components. However, their optical engineering is still a challenging task owing to multiple obstacles, including the absence of a rapid, contactless, and the reliable method to obtain their dielectric function as well as to evaluate in situ the changes in optical constants and exciton binding energies. Here, we present an advanced approach based on ellipsometry measurements for retrieval of dielectric functions and the excitonic properties of both monolayer and bulk TMDs. Using this method, we conduct a detailed study of monolayer MoS₂ and its bulk crystal in the broad spectral range (290–3300 nm). In the near- and mid-infrared ranges, both configurations appear to have no optical absorption and possess an extremely high dielectric permittivity making them favorable for lossless subwavelength photonics. In addition, the proposed approach opens a possibility to observe a previously unreported peak in the dielectric function of monolayer MoS₂ induced by the use of perylene-3,4,9,10-tetracarboxylic acid tetrapotassium salt (PTAS) seeding promoters for MoS₂ synthesis and thus enables its applications in chemical and biological sensing. Therefore, this technique as a whole offers a state-of-the-art metrological tool for next-generation TMD-based devices.

Practical applications of quantum information technologies exploiting the quantum nature of light require efficient and bright true single-photon sources which operate under ambient conditions. Currently, point defects in the crystal lattice of diamond known as color centers have taken the lead in the race for the most promising quantum system for practical non-classical light sources. This work is focused on a different quantum optoelectronic material, namely a color center in silicon carbide, and reveals the physics behind the process of single-photon emission from color centers in SiC under electrical pumping. We show that color centers in silicon carbide can be far superior to any other quantum light emitter under electrical control at room temperature. Using a comprehensive theoretical approach and rigorous numerical simulations, we demonstrate that at room temperature, the photon emission rate from a p–i–n silicon carbide single-photon emitting diode can exceed 5 Gcounts/s, which is higher than what can be achieved with electrically driven color centers in diamond or epitaxial quantum dots. These findings lay the foundation for the development of practical photonic quantum devices which can be produced in a well-developed CMOS compatible process flow.

SnS₂ and SnSe₂ have recently been shown to have a wide range of applications in photonic and optoelectronic devices. However, because of incomplete knowledge about their optical characteristics, the use of SnS₂ and SnSe₂ in optical engineering remains challenging. Here, we addressed this problem by establishing SnS₂ and SnSe₂ linear and nonlinear optical properties in the broad (300–3300 nm) spectral range. Coupled with the first-principle calculations, our experimental study unveiled the full dielectric tensor of SnS₂ and SnSe₂. Furthermore, we established that SnS₂ is a promising material for visible high refractive index nanophotonics. Meanwhile, SnSe₂ demonstrates a stronger nonlinear response compared with SnS₂. Our results create a solid ground for current and next-generation SnS₂- and SnSe₂-based devices.

The exceptional optical, electrical, and mechanical capabilities of layered transition metal carbides, nitrides, and carbonitrides, called MXenes, revolutionized materials science. Among them, Ti₃C₂ received the most attention owing to the developed synthesis and processing methods, high conductivity, and pronounced plasmonic response. The latter, however, remains controversial with the open question of whether the peak around 800 nm has plasmonic or interband transition origin. To address this issue, we combine spectroscopic ellipsometry and transmittance results with first-principle computations. Their combination reveals that although Ti₃C₂ is a metal, its optical response becomes plasmonic (Re ε < 0) above 1415 nm, in contrast to the previous understanding. In addition to fundamental significance, this dual dielectric/plasmonic optical response opens a path for theranostic applications, as we demonstrated on the example of Ti₃C₂ nanospheres. Thus, our study revisits broadband (300–3300 nm) optical constants of Ti₃C₂ and broadens its application scope in photonics.

Graphene is a promising building block material for developing novel photonic and optoelectronic devices. Here, we report a comprehensive experimental study of chemical-vapor deposited (CVD) monolayer graphene’s optical properties on three different substrates for ultraviolet, visible, and near-infrared spectral ranges (from 240 to 1000 nm). Importantly, our ellipsometric measurements are free from the assumptions of additional nanometer-thick layers of water or other media. This issue is critical for practical applications since otherwise, these additional layers must be included in the design models of various graphene photonic, plasmonic, and optoelectronic devices. We observe a slight difference (not exceeding 5%) in the optical constants of graphene on different substrates. Further, the optical constants reported here are very close to those of graphite, which hints on their applicability to multilayer graphene structures. This work provides reliable data on monolayer graphene’s optical properties, which should be useful for modeling and designing photonic devices with graphene.

The recently developed plasmonic and photonic metal-semiconductor nanolasers feature unique properties, such as ultra-small mode volume and footprint, high Purcell factor, and ultra-fast modulation. However, it is often difficult to recognize when the transition to lasing occurs, while the most important feature of laser radiation, i.e., coherence, is available only above the lasing threshold. Here we systematically study the second-order coherence properties of metal-semiconductor nanolasers at both low- and high-pump rates. We find the lasing threshold using a clear coherence definition and derive a simple expression for the threshold pump current (optical pump power), which can be applied to most thresholdless and non-thresholdless metal-semiconductor nanolasers.