SnS₂ and SnSe₂ have recently been shown to have a wide range of applications in photonic and optoelectronic devices. However, because of incomplete knowledge about their optical characteristics, the use of SnS₂ and SnSe₂ in optical engineering remains challenging. Here, we addressed this problem by establishing SnS₂ and SnSe₂ linear and nonlinear optical properties in the broad (300–3300 nm) spectral range. Coupled with the first-principle calculations, our experimental study unveiled the full dielectric tensor of SnS₂ and SnSe₂. Furthermore, we established that SnS₂ is a promising material for visible high refractive index nanophotonics. Meanwhile, SnSe₂ demonstrates a stronger nonlinear response compared with SnS₂. Our results create a solid ground for current and next-generation SnS₂- and SnSe₂-based devices.

Noble transition metal dichalcogenides (TMDCs) such as PtS₂ and PtSe₂ show significant potential in a wide range of optoelectronic and photonic applications. Noble TMDCs, unlike standard TMDCs such as MoS₂ and WS₂, operate in the ultrawide spectral range from ultraviolet to mid-infrared wavelengths; however, their properties remain largely unexplored. Here, we measured the broadband (245–3300 nm) optical constants of ultrathin PtS₂ and PtSe₂ films to eliminate this gap and provide a foundation for optoelectronic device simulation. We discovered their broadband absorption and high refractive index both theoretically and experimentally. Based on first-principle calculations, we also predicted their giant out-of-plane optical anisotropy for monocrystals. As a practical illustration of the obtained optical properties, we demonstrated surface plasmon resonance biosensors with PtS₂ or PtSe₂ functional layers, which dramatically improves sensor sensitivity by 60 and 30%, respectively.

Graphene/hBN heterostructures can be considered as one of the basic building blocks for the next-generation optoelectronics mostly owing to the record-high electron mobilities. However, currently, the studies of the intrinsic optical properties of graphene are limited to the standard substrates (SiO₂/Si, glass, quartz) despite the growing interest in graphene/hBN heterostructures. This can be attributed to a challenging task of the determination of hBN’s strongly anisotropic dielectric tensor in the total optical response. In this study, we overcome this issue through imaging spectroscopic ellipsometry utilizing simultaneous analysis of hBN’s optical response with and without graphene monolayers. Our technique allowed us to retrieve the optical constants of graphene from graphene/hBN heterostructures in a broad spectral range of 250–950 nm. Our results suggest that graphene’s absorption on hBN may exceed the one of graphene on SiO₂/Si by about 60%.

Two-dimensional layers of transition-metal dichalcogenides (TMDs) have been widely studied owing to their exciting potential for applications in advanced electronic and optoelectronic devices. Typically, monolayers of TMDs are produced either by mechanical exfoliation or chemical vapor deposition (CVD). While the former produces high-quality flakes with a size limited to a few micrometers, the latter gives large-area layers but with a nonuniform surface resulting from multiple defects and randomly oriented domains. The use of epitaxy growth can produce continuous, crystalline and uniform films with fewer defects. Here, we present a comprehensive study of the optical and structural properties of a single layer of MoS₂ synthesized by molecular beam epitaxy (MBE) on a sapphire substrate. For optical characterization, we performed spectroscopic ellipsometry over a broad spectral range (from 250 to 1700 nm) under variable incident angles. The structural quality was assessed by optical microscopy, atomic force microscopy, scanning electron microscopy, and Raman spectroscopy through which we were able to confirm that our sample contains a single-atomic layer of MoS₂ with a low number of defects. Raman and photoluminescence spectroscopies revealed that MBE-synthesized MoS₂ layers exhibit a two-times higher quantum yield of photoluminescence along with lower photobleaching compared to CVD-grown MoS₂, thus making it an attractive candidate for photonic applications.

Materials with high optical constants are of paramount importance for efficient light manipulation in nanophotonics applications. Recent advances in materials science have revealed that van der Waals (vdW) materials have large optical responses owing to strong in-plane covalent bonding and weak out-of-plane vdW interactions. However, the optical constants of vdW materials depend on numerous factors, e.g., synthesis and transfer method. Here, we demonstrate that in a broad spectral range (290–3300 nm) the refractive index n and the extinction coefficient k of Bi₂Se₃ are almost independent of synthesis technology, with only a $~$10% difference in n and k between synthesis approaches, unlike other vdW materials, such as MoS₂, which has a $~$60% difference between synthesis approaches. As a practical demonstration, we showed, using the examples of biosensors and therapeutic nanoparticles, that this slight difference in optical constants results in reproducible efficiency in Bi₂Se₃-based photonic devices.

The development of efficient plasmonic nanostructures with controlled and reproducible surface-enhanced Raman spectroscopy (SERS) signals is an important task for the evolution of ultrasensitive sensor-related methods. One of the methods to improving the characteristics of nanostructures is the development of hybrid structures that include several types of materials. Here, we experimentally investigate ultrathin gold films (3–9 nm) near the percolation threshold on Si/Au/SiO₂ and Si/Au/SiO₂/graphene multilayer structures. The occurring field enhanced (FE) effects were characterized by a recording of SERS signal from Crystal Violet dye. In this geometry, the overall FE principally benefits from the combination of two mechanisms. The first one is associated with plasmon excitation in Au clusters located closest to each other. The second is due to the gap plasmons’ excitation in a thin dielectric layer between the mirror and corrugated gold layers. Experimentally obtained SERS signals from sandwiched structures fabricated with Au film of 100 nm as a reflector, dielectric SiO₂ spacer of 50 nm and ultrathin gold atop could reach SERS enhancements of up to around seven times relative to gold films near the percolation threshold deposited on a standard glass substrate. The close contiguity of the analyte to graphene and nanostructured Au efficiently quenches the fluorescent background of the model compound. The obtained result shows that the strategy of combining ultrathin nano-island gold films near the percolation threshold with gap plasmon resonances is promising for the design of highly efficient SERS substrates for potential applications in ultrasensitive Raman detection.