This letter presents a visible light communication (VLC) system based on a single 50- μm gallium nitride light emitting diode (LED). A device of this size exhibits a 3-dB modulation bandwidth of at least 60 MHz - significantly higher than commercially available white lighting LEDs. Orthogonal frequency division multiplexing is employed as a modulation scheme. This enables the limited modulation bandwidth of the device to be fully used. Pre- and postequalization techniques, as well as adaptive data loading, are successfully applied to achieve a demonstration of wireless communication at speeds exceeding 3 Gb/s. To date, this is the fastest wireless VLC system using a single LED.

We have systematically investigated the impact of device size scaling on the light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes (LEDs). Devices with diameters in the range 20–300 μm have been studied. It is shown that smaller LED pixels can deliver higher power densities (despite the lower absolute output powers) and sustain higher current densities. Investigations of the electroluminescence characteristics of differently sized pixels against current density reveal that the spectral shift is dominated by blueshift at the low current density level and then by redshift at the high current density level, owing to the competition between the bandgap shrinkage caused by self-heating and band-filling effects. The redshift of the emission wavelength with increasing current density is much faster and larger for the bigger pixels, suggesting that the self-heating effect is also size dependent. This is further confirmed by the junction-temperature rise measured by the established spectral shift method. It is shown that the junction-temperature rise in smaller pixels is slower, which in turn explains why the smaller redshift of the emission wavelength with current density is present in smaller pixels. The measured size-dependent junction temperature is in reasonable agreement with finite element method simulation results.

Gallium-nitride (GaN)-based light-emitting diodes (LEDs) are highly efficient sources for general purpose illumination. Visible light communications (VLC) uses these sources to supplement existing wireless communications by offering a large, licence-free region of optical spectrum. Here, we report on progress in the development of micro-scale GaN LEDs (micro-LEDs), optimized for VLC. These blue-emitting micro-LEDs are shown to have very high electrical-to-optical modulation bandwidths, exceeding 800 MHz. The data transmission capabilities of the micro-LEDs are illustrated by demonstrations using ON–OFF-keying, pulse-amplitude modulation, and orthogonal frequency division multiplexing modulation schemes to transmit data over free space at the rates of 1.7, 3.4, and 5 Gb/s, respectively.

The mechanisms of size-dependent efficiency and efficiency droop of blue InGaN micro-pixel light emitting diodes (μLEDs) have been investigated experimentally and by simulation. Electrical characterisation confirms the improvement of current spreading for smaller μLEDs, which enables the achievement of the higher efficiency at high injection current densities. Owing to the higher ratio of sidewall perimeter to mesa area of smaller μLEDs, a lower efficiency was observed at a low injection current density, resulting from defect-related Shockley-Read-Hall non-radiative recombination. We demonstrate that such sidewall etch defects can be partially recovered by increased thermal annealing time, consequently improving the efficiency at low current densities.

We report the high-frequency modulation of individual pixels in 8 × 8 arrays of III-nitride-based micro-pixellated light-emitting diodes, where the pixels within the array range from 14 to 84 μ m in diameter. The peak emission wavelengths of the devices are 370, 405, 450 and 520 nm, respectively. Smaller area micro-LED pixels generally exhibit higher modulation bandwidths than their larger area counterparts, which is attributed to their ability to be driven at higher current densities. The highest optical -3 dB modulation bandwidths from these devices are shown to be in excess of 400 MHz, which, to our knowledge, are the highest bandwidths yet reported for GaN LEDs. These devices are also integrated with a complementary metal-oxide-semiconductor (CMOS) driver array chip, allowing for simple computer control of individual micro-LED pixels. The bandwidth of the integrated micro-LED/CMOS pixels is shown to be up to 185 MHz; data transmission at bit rates up to 512 Mbit/s is demonstrated using on-off keying non return-to-zero modulation with a bit-error ratio of less than 1 × 10^-10, using a 450 nm-emitting 24 μm diameter CMOS-controlled micro-LED. As the CMOS chip allows for up to 16 independent data inputs, this device demonstrates the potential for multi-Gigabit/s parallel data transmission using CMOS-controlled micro-LEDs.

The field of visible light communications (VLC) has gained significant interest over the last decade, in both fibre and free-space embodiments. In fibre systems, the availability of low cost polymer optical fibre (POF) that is compatible with visible data communications has been a key enabler. In free-space applications, the availability of hundreds of THz of the unregulated spectrum makes VLC attractive for wireless communications. This paper provides an overview of the recent developments in VLC systems based on gallium nitride (GaN) light-emitting diodes (LEDs), covering aspects from sources to systems. The state-of-the-art technology enabling bandwidth of GaN LEDs in the range of >400 MHz is explored. Furthermore, advances in key technologies, including advanced modulation, equalisation, and multiplexing that have enabled free-space VLC data rates beyond 10 Gb s ⁻¹ are also outlined.