A novel Parity-Preserving Reversible Gate (PPRG) is developed using Quantum-dot Cellular Automata (QCA) technology. PPRG enables rich fault-tolerance features, as well as reversibility attributes sought for energy-neutral computation. Performance of the PPRG design is validated through implementing thirteen standard combinational Boolean functions of three variables, which demonstrate from 10.7 to 41.9 percent improvement over the previous gate counts obtained with other reversible and/or preserving gate designs. Switching and leakage energy dissipation as low as 0.141 eV and 0.294 eV, for 1.5 Ek energy level are achieved using PPRG, respectively. The utility of PPRG is leveraged to design a one-bit full adder with 171 cells occupying only 0.19 mm 2 area. Finally, fault detection and isolation properties are formalized into a concise procedure. PPRG-based circuits capable of self-configuring active recovery for selected three-variable standard functions are realized using a memoryless method irrespective of garbage outputs.
31 January 2017 in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Magnetic tunnel junction (MTJ)-based devices have been studied extensively as a promising candidate to implement hybrid energy-efficient computing circuits due to their nonvolatility, high integration density, and CMOS compatibility. In this paper, MTJs are leveraged to develop a novel full adder (FA) based on 3- and 5-input majority gates. Spin Hall effect (SHE) is utilized for changing the MTJ states resulting in low-energy switching behavior. SHE-MTJ devices are modeled in Verilog-A using precise physical equations. SPICE circuit simulator is used to validate the functionality of 1-bit SHE-based FA. The simulation results show 76% and 32% improvement over previous voltage-mode MTJ-based FA in terms of energy consumption and device count, respectively. The concatanatability of our proposed 1-bit SHE-FA is investigated through developing a 4-bit SHE-FA. Finally, delay and power consumption of an n-bit SHE-based adder has been formulated to provide a basis for developing an energy efficient SHE-based n-bit arithmetic logic unit.
Domain wall nanomagnet (DWNM)-based devices have been extensively studied as a promising alternative to the conventional CMOS technology in both the memory and logic implementations due to their non-volatility, near-zero standby power, and high integration density characteristics. In this paper, we leverage a physics-based model of a DWNM device to design a highly scalable current-mode majority gate to achieve a novel one bit full-adder (FA) circuit. The modeled DWNM specifications are calibrated with the experimentally measured data. The functionality of the proposed DWNM-based FA (DWNM-FA) is verified using a SPICE circuit simulator. The detailed analysis and the calculations have been performed to realize the proposed DWNM-FA delay and power consumption corresponding to the various induced input currents at different operating temperatures. The power-delay product of DWNM-FA is examined to tune the operation within the optimum induced input current region to obtain desired power-delay requirements over a range of 200 μA to 1 mA at temperatures from 298 to 378 K. Finally, the comparison results exhibit 52% and 49% area improvement as well as 41% and 31% improvement in device count complexity over CMOS-based and magnetic tunnel junction-based FA designs, respectively.
18 February 2016 in IEEE Transactions on Circuits and Systems II: Express Briefs
Spin-transfer torque (STT) random access memory has been researched as a promising alternative for static random access memory in reconfigurable fabrics, particularly in lookup tables (LUTs), due to its nonvolatility, low standby and static power, and high integration density features. In this brief, we leverage physical characteristics of magnetic tunnel junctions (MTJs) to design a unique reference MTJ which has a calibrated resistance matching the STT-based LUT (STT-LUT) circuit requirements to provide optimal reading operation. Results obtained show 42% and 70% power-delay product (PDP) improvement over previous MTJ-based LUT designs. Moreover, a four-input adaptive STT-based LUT (A-LUT) is proposed based on the developed STT-LUT, which is configurable to function in seven independent modes. An n-input A-LUT exhibits PDP which can be a fraction of n-input STT-LUT PDP, when performing two-input to (n-1)-input Boolean logic functions.