In this paper, the ferroelectric properties of TiN/Ti/Si:HfO2/TiN stacks are shown to be modulated by the Ti oxygen scavenging layer, leading to improved remanent polarization and wake-up at low switching fields. Hard x-ray photoelectron spectroscopy is used to measure the oxygen vacancy (VO) concentration in Si-doped HfO2 based capacitors. This VO engineered ferroelectric stack is then assessed at the wafer scale within 16 kbit 1T-1C FeRAM arrays integrated into 130 nm CMOS. The introduction of a Ti oxygen scavenging layer at the top interface of Si:HfO2-based BEOL-integrated metal/ferroelectric/metal capacitors enhances their ferroelectric (FE) behavior (+100% remanent polarization 2.Pr), confirming the positive role of modest concentrations of VO in orthorhombic phase crystallization at low thermal budgets. It is statistically demonstrated at 16 kbit array level that VO-rich FE Si:HfO2 facilitates 2.5 V FeRAM array operation with improved memory window. The field cycling dependence of the memory window is correlated with the VO concentration, and an endurance of 108 cycles is measured at the array level.

Bulk CsPbBr3 is an emerging semiconductor that has shown unprecedented increase in performance over the last decade for optoelectronic applications. However, further development of devices based on CsPbBr3 is hampered by their poor electrical stability under operation. Migration and accumulation of native ions (Cs+, Pb2+, and Br-) under electric fields has been suggested by many groups to be responsible for the observed device instabilities, although direct experimental evidence of ionic motion during operation has been seldom reported. In our study, ion migration has been probed by grazing incidence x-ray fluorescence (GIXRF) in CsPbBr3 polycrystalline layers grown in vapor phase. Our findings indicate that both Cs and Br experience ionic migration under electric field, suggesting that these ions are responsible for the measured current instability in our devices. In the timescale of a few hours, the ionic drifting rates of mobile Cs and Br under the top electrode were found to be similar, as high as ∼ 20 ppm h−1 V−1 mm. This work paves the way for a better understanding of ion motion issues that play a key role in the optoelectronic properties of CsPbBr3 devices.

We present a study of the effect of electrically induced cracks on both the ferroelectric and piezoelectric properties of Pt/PbZr_0.52Ti_0.48O₃ (PZT)/Pt capacitors and correlations with domain structures of PZT films. Above a threshold bipolar electric field, cracks appear inside the PZT layer thickness leading to an increase in the ferroelectric polarization (+50% for the remnant polarization, from 16 to 25 μC/cm²) and the longitudinal piezoelectric coefficient d_33,f (from ∼150 to ∼220 pm/V). The use of x-ray diffraction during in situ biasing provides direct evidence for a modification of the PZT crystalline structure as well as the a/c domain configuration. After cracking, the fraction of c-domains is strongly increased, thus contributing to higher polarization and larger strain in the out-of-plane direction.

Switching Spectroscopy Piezoresponse Force Microscopy (SSPFM) stands out as a powerful method for probing ferroelectric properties within materials subjected to incremental polarization induced by an external electric field. However, the dense data processing linked to this technique is a critical factor influencing the quality of obtained results. Furthermore, meticulous exploration of various artifacts, such as electrostatics, which may considerably influence the signal, is a key factor in obtaining quantitative results. In this paper, we present a global methodology for SSPFM data processing, accessible in open-source with a user-friendly Python application called PySSPFM. A ferroelectric thin film sample of potassium sodium niobate has been probed to illustrate the different aspects of our methodology. Our approach enables the reconstruction of hysteresis nano-loops by determining the PR as a function of applied electric field. These hysteresis loops are then fitted to extract characteristic parameters that serve as measures of the ferroelectric properties of the sample. Various artifact decorrelation methods are employed to enhance measurement accuracy, and additional material properties can be assessed. Performing this procedure on a grid of points across the surface of the sample enables the creation of spatial maps. Furthermore, different techniques have been proposed to facilitate post-treatment analysis, incorporating algorithms for machine learning (K-means), phase separation, and mapping cross correlation, among others. Additionally, PySSPFM enables a more in-depth investigation of the material by studying the nanomechanical properties during poling, through the measurement of the resonance properties of the cantilever–tip–sample surface system.

Electrical aging in lead zirconate titanate (PbZr_xTi_1−xO₃) thin films has been intensively studied from a macroscopic perspective. However, structural origins and consequences of such degradation are less documented. In this study, we have used synchrotron radiation to evaluate the behavior of ferroelectric domains by X-ray diffraction (XRD). The sample was loaded with an AC triangular bias waveform between ±10 V with a number of cycle varying from one up to 10⁸. At each step of the aging procedure, XRD spectra had been collected in situ during the application of an electric field on a capacitor. The fine analysis of the (200) pseudo-cubic peak structure allows to separate the evolution of the volume of a/c tetragonal and rhombohedral domains along the electrical biasing. Throughout the aging, both intrinsic and extrinsic responses of tetra and rhombohedral domains are altered, the behavior depending on the observed phase. This methodology opens up new perspectives in the comprehension of the aging effect in ferroelectric thin film.