Hugo Kuentz

Mr. Hugo Kuentz

PhD

Research Focus & Metrics

Academic Career Length

6Years (2021-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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24 November 2021 in Micromachines
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Journal Article
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RLRomain Liechti
Romain Liechti
SDStephane Durand
Stephane Durand
THThierry Hilt
Thierry Hilt
FCFabrice Casset
Fabrice Casset
CPChristophe Poulain
Christophe Poulain
MCMikaël Colin
Mikaël Colin
We propose a method to evaluate the Total Harmonic Distortion generated by a cantilever-based PZT loudspeaker inside an IEC 60318-4 coupler. The model is validated using experimental data of a commercial loudspeaker. Using the time domain equations of the equivalent electrical circuit of the loudspeaker inside the coupler and a state space formulation, the acoustic pressure response is calculated and compared to the measurement of the manufacturer. Next, the stiffness, transduction and capacitance nonlinear functions are evaluated with a Double-Beam Laser Interferometer (DBLI) and a nanoindenter on test devices and on the commercial loudspeaker. By introducing the nonlinear functions into the model as amplitude-dependent parameters, the THD generated by the loudspeaker is calculated and compared to the value provided by the manufacturer. The good agreement between the measurement and the simulation could allow for a rather quick simulation of the performance of similarly designed loudspeakers at the early stage of the design, by only estimating the static linearity of the main nonlinearity sources.

5 December 2022 in Applied Physics Letters
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Journal Article
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HKHugo Kuentz
Hugo Kuentz
BWBaba Wagué
Baba Wagué
NVNicolas Vaxelaire
Nicolas Vaxelaire
VDValérie Demange
Valérie Demange
CPChristophe Poulain
Christophe Poulain
GRGwenael Le Rhun
Gwenael Le Rhun
We present a study of the effect of electrically induced cracks on both the ferroelectric and piezoelectric properties of Pt/PbZr0.52Ti0.48O3 (PZT)/Pt capacitors and correlations with domain structures of PZT films. Above a threshold bipolar electric field, cracks appear inside the PZT layer thickness leading to an increase in the ferroelectric polarization (+50% for the remnant polarization, from 16 to 25 μC/cm2) and the longitudinal piezoelectric coefficient d33,f (from ∼150 to ∼220 pm/V). The use of x-ray diffraction during in situ biasing provides direct evidence for a modification of the PZT crystalline structure as well as the a/c domain configuration. After cracking, the fraction of c-domains is strongly increased, thus contributing to higher polarization and larger strain in the out-of-plane direction.

17 May 2024 in Journal of Applied Physics
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Journal Article
Open access
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HVH. Valloire
H. Valloire
PQP. Quéméré
P. Quéméré
NVNicolas Vaxelaire
Nicolas Vaxelaire
HKHugo Kuentz
Hugo Kuentz
GRGwenael Le Rhun
Gwenael Le Rhun
LBLukasz Borowik
Lukasz Borowik
Switching Spectroscopy Piezoresponse Force Microscopy (SSPFM) stands out as a powerful method for probing ferroelectric properties within materials subjected to incremental polarization induced by an external electric field. However, the dense data processing linked to this technique is a critical factor influencing the quality of obtained results. Furthermore, meticulous exploration of various artifacts, such as electrostatics, which may considerably influence the signal, is a key factor in obtaining quantitative results. In this paper, we present a global methodology for SSPFM data processing, accessible in open-source with a user-friendly Python application called PySSPFM. A ferroelectric thin film sample of potassium sodium niobate has been probed to illustrate the different aspects of our methodology. Our approach enables the reconstruction of hysteresis nano-loops by determining the PR as a function of applied electric field. These hysteresis loops are then fitted to extract characteristic parameters that serve as measures of the ferroelectric properties of the sample. Various artifact decorrelation methods are employed to enhance measurement accuracy, and additional material properties can be assessed. Performing this procedure on a grid of points across the surface of the sample enables the creation of spatial maps. Furthermore, different techniques have been proposed to facilitate post-treatment analysis, incorporating algorithms for machine learning (K-means), phase separation, and mapping cross correlation, among others. Additionally, PySSPFM enables a more in-depth investigation of the material by studying the nanomechanical properties during poling, through the measurement of the resonance properties of the cantilever–tip–sample surface system.

20 November 2025 in Journal of Materials Chemistry C
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Journal Article
Open access
BCB. Carreño-Jiménez
B. Carreño-Jiménez
HKHugo Kuentz
Hugo Kuentz
KKK. Kpoton
K. Kpoton
TRT. Rotrou
T. Rotrou
SOS. Ollivier
S. Ollivier
MGM. Guilloux-Viry
M. Guilloux-Viry
K-enriched KNN target effectively prevents alkali cation deficiency, ensuring typical piezoelectric and ferroelectric behavior. In particular, it avoids the secondary phase K 4 Nb 6 O 17 in KNN thin films obtained by PLD using a stoichiometric target.

8 April 2026
Verified
Thesis
Closed access
HKHugo Kuentz
Hugo Kuentz
L’interdiction de l’utilisation du plomb avec la norme RoHS menace l’utilisation du Titano-Zirconate de plomb (PZT) employé majoritairement en microélectronique dans les applications piézoélectriques actionneurs. Le (K,Na)NbO₃ (KNN) est un matériau prometteur pour le remplacer. L’objectif de cette thèse est d’évaluer comme matériau alternatif au PZT pour l’actionnement piézoélectrique. Des films monophasés de KNN pérovskite d'une épaisseur de 600 nm ont été déposés avec succès par ablation laser pulsée sur des substrats de dimensions centimétriques et sur des wafers de Silicium de 200 mm de diamètre. Des condensateurs piézoélectriques fonctionnels ont été réalisés et ont permis de démontrer le comportement piézo- et ferroélectrique de ces films. Un KNN commercial déposé par pulvérisation cathodique a été intégré selon un procédé industriellement compatible afin de réaliser des preuves de concepts de fonctionnement de dispositifs actionneurs à base de KNN (cantilevers et membranes). Les mesures de déflexion des cantilevers de KNN ont permis d’estimer un coefficient d₃₁ compris entre 100 et 150 pm/V. Une étude de fiabilité portant sur la résistance à la fatigue et aux claquages électriques a été menée sur ces wafers. Les condensateurs de KNN avaient une résistance au claquage inférieur en moyenne de 20 % à celle des condensateurs de PZT. Enfin une étude sur la fissuration de condensateurs de PZT a permis de corréler des variations de propriétés structurales avec les propriétés piézoélectriques.