Diamond films are very desirable for application to SAW devices because of their high acoustic wave velocity, which allows the extending of the frequency limit of operation at a given interdigital transducer line-width resolution. Use of high-quality AlN as the piezoelectric layer in conjunction with diamond is also desirable because of its high SAW velocity - the highest among all piezoelectric materials - together with its excellent electrical, mechanical, and chemical properties. The problems arising in the growth of AlN films on diamond have prevented, until now, the use of this combination of materials. In this paper we present recent results on the growth of highly oriented, low-stressed AlN films on diamond. SAW propagation on AlN/diamond has been theoretically investigated together with electromechanical coupling for both the Rayleigh and the Sezawa modes. The theoretical calculations show that high SAW velocities are achievable with good coupling efficiencies. Under proper conditions very large piezoelectric couplings are predicted k/sup 2/ = 2.2 and 4% for the Rayleigh and the Sezawa wave, respectively comparable to those observed in strongly piezoelectric single crystals such as LiNbO/sub 3/, but with SAW velocities approximately two-fold higher. Experiments performed on AIN/diamond/Si SAW test devices have shown good agreement between experimental results and theoretical predictions and demonstrate the feasibility of SAW devices based on this technology.

An electroacoustic chemical sensor based on thin-film bulk acoustic wave resonators (TFBAR) is presented. It operates on the same principle of the well-known quartz crystal micro-balance, at an operation frequency extended up to several GHz. The larger output signal, associated to the higher operation frequency, is a condition to improve the device sensitivity. TFBARs have been implemented on (001) Si wafers, using ${\mathrm{Si}}_3{\mathrm{N}}_4∕\mathrm{Al}\mathrm{N}$ membranes, obtained by anisotropic etching of Si. Time response and calibration curves have been tested on TFBAR sensors exploiting two different chemically interactive membranes: Pd and Co-tetra-phenyl-porphyrin, both deposited in the form of thin-films by thermal evaporation. Measurements performed upon exposure to ${\mathrm{H}}_2$ , CO, and ethanol have shown the ability of the device to detect low concentrations of the analyte with a fast and repeatable response.

A thin-film bulk acoustic resonator (TFBAR) based on a vibrating membrane of AlN/Si₃N₄ has been fabricated onto a silicon substrate and functionally characterized as gas sensor at a resonating frequency of 1.045 GHz. This novel TFBAR-based gas sensor has been functionalized by a sensing nanocomposite layer, prepared by a Langmuir-Blodgett (LB) technique, of single-walled carbon nanotubes (SWCNTs) embedded in a host matrix of organic material of cadmium arachidate. High-performance gas detection at room temperature of a SWCNT-coated TFBAR sensor has been reported. The sensing device exhibits high sensitivity (e.g., acetone: 12 kHz/ppm; ethylacetate: 17.3 kHz/ppm), fast response (within 2-3 min), slow reversibility (within 1 h), and good repeatability (les 5% variation) of response toward tested organic vapors of acetone, ethylacetate, and toluene.