Hydrogen (H₂) is attracting attention as a renewable energy source in various fields. However, H₂ has a potential danger that it can easily cause a backfire or explosion owing to minor external factors. Therefore, H₂ gas monitoring is significant, particularly near the lower explosive limit. Herein, tin dioxide (SnO₂) thin films were annealed at different times. The as-obtained thin films were used as sensing materials for H₂ gas. Here, the performance of the SnO₂ thin film sensor was studied to understand the effect of annealing and operating temperature conditions of gas sensors to further improve their performance. The gas sensing properties exhibited by the 3-h annealed SnO₂ thin film showed the highest response compared to the unannealed SnO₂ thin film by approximately 1.5 times. The as-deposited SnO₂ thin film showed a high response and fast response time to 5% H₂ gas at 300 °C of 257.34% and 3 s, respectively.

Shortwave infrared (SWIR) photodetectors are being actively researched for their application in autonomous vehicles, biometric sensors, and night vision. However, most of the SWIR photodetectors that have been studied so far are produced by complex semiconductor fabrication processes and have low sensitivity at room temperature because of thermal noise. In addition, the low wavelength band of the SWIR photodetectors currently used has a detrimental effect on the human eye. To overcome these disadvantages, we propose a solution-processed PbS SWIR photodetector that can minimize harmful effects on the human eye. In this study, we synthesized PbS quantum dots (QDs) that have high absorbance peaked at 1410 nm and fabricated SWIR photodetectors with a conductive polymer, poly(3-hexylthiophene) (P3HT), using the synthesized PbS QDs. The characteristics of the synthesized PbS QDs and the current-voltage (I-V) characteristics of the fabricated PbS SWIR photodetectors were measured. It was found that the maximum responsivity of the optimized PbS SWIR photodetector with P3HT was 2.26 times that of the PbS SWIR photodetector without P3HT. Moreover, due to the high hole mobility and an appropriate highest occupied molecular orbital level of P3HT, the former showed a lower operating voltage.

To realize portable gas sensor applications, it is necessary to develop hydrogen sulfide (H₂S) microsensors capable of operating at lower voltages with high response, good selectivity and stability, and fast response and recovery times. A gas sensor with a high operating voltage (>5 V) is not suitable for portable applications because it demands additional circuitry, such as a charge pump circuit (supply voltage of common circuits is approximately 1.8–5 V). Among H₂S microsensor components, that is, the substrate, sensing area, electrode, and micro-heater, the proper design of the micro-heater is particularly important, owing to the role of thermal energy in ensuring the efficient detection of H₂S. This study proposes and develops tin (IV)-oxide (SnO₂)-based H₂S microsensors with different geometrically designed embedded micro-heaters. The proposed micro-heaters affect the operating temperature of the H₂S sensors, and the micro-heater with a rectangular mesh pattern exhibits superior heating performance at a relatively low operating voltage (3–4 V) compared to those with line (5–7 V) and rectangular patterns (3–5 V). Moreover, utilizing a micro-heater with a rectangular mesh pattern, the fabricated SnO₂-based H₂S microsensor was driven at a low operating voltage and offered good detection capability at a low H₂S concentration (0–10 ppm), with a quick response (<51 s) and recovery time (<101 s).

A cadmium selenide/zinc sulfide (CdSe/ZnS) quantum dot (QD)-based multi-level memory device with the structure [ITO/PEDOT:PSS/QDs/ZnO/Al:Al₂O₃/QDs/Al] was fabricated via a spin-coating method used to deposit thin films. Two layers of QD thin films present in the device act as charge storage layers to form three distinct states. Zinc oxide (ZnO) and aluminum oxide (Al₂O₃) were added to prevent leakage. ZnO NPs provide orthogonality between the two QD layers, and a poly(3,4-ethylenedioxythio-phene): poly(styrenesulfonate) (PEDOT:PSS) thin film was formed for effective hole injection from the electrodes. The core/shell structure of the QDs provides the quantum well, which causes the trapping of injected charges. The resistance changes according to the charging and discharging of the QDs’ trap site and, as a result, the current through the device also changes. There are two quantum wells, two current changes, and three stable states. The role of each thin film was confirmed through I–V curve analysis and the fabrication conditions of each thin film were optimized. The synthesized QDs and ZnO nanoparticles were evaluated via X-ray diffraction, transmission electron microscopy, and absorbance and photoluminescence spectroscopy. The measured write voltages of the fabricated device were at 1.8 and 2.4 V, and the erase voltages were −4.05 and −4.6 V. The on/off ratio at 0.5 V was 2.2 × 10³. The proposed memory device showed retention characteristics of ≥100 h and maintained the initial write/erase voltage even after 200 iterative operations.

Recently, with the development of automation technology in various fields, much research has been conducted on infrared photodetectors, which are the core technology of LiDAR sensors. However, most infrared photodetectors are expensive because they use compound semiconductors based on epitaxial processes, and they have low safety because they use the near-infrared (NIR) region that can damage the retina. Therefore, they are difficult to apply to automation technologies such as automobiles and factories where humans can be constantly exposed. In contrast, short-wavelength infrared photodetectors based on PbS QDs are actively being developed because they can absorb infrared rays in the eye-safe region by controlling the particle size of QDs and can be easily and inexpensively manufactured through a solution process. However, PbS QDs-based SWIR photodetectors have low chemical stability due to the electron/hole extraction layer processed by the solution process, making it difficult to manufacture them in the form of patterning and arrays. In this study, bulk NiO and ZnO were deposited by sputtering to achieve uniformity and patterning of thin films, and the performance of PbS QDs-based photodetectors was improved by optimizing the thickness and annealing conditions of the thin films. The fabricated photodetector achieved a high response characteristic of 114.3% through optimized band gap and improved transmittance characteristics.