HK-PS23 demonstrated potential benefits in reducing the level of cortisol compared to placebo and might improve perceived anxiety states in nurses under particularly high levels of anxiety.

Computing-in-memory (CIM) technology for edge computing systems demands memory devices that are not only fast but also capable of being easily integrated into stackable manufacturing processes. To address these requirements, conductive bridge random access memory (CBRAM) devices, which are compatible with copper-wiring processes, have emerged as promising candidates. However, the practical implementation of CBRAM is hindered by challenges associated with physical defects in its operating mechanism, leading to issues such as non-uniform switching voltages and high energy consumption in high-density storage applications. This study introduces a layer of copper-doped zinc oxide (ZnO) nanorods as the switching medium in the CBRAM device. The nanostructures play a critical role in regulating copper ion diffusion, thereby facilitating the formation of uniform conductive filaments. The influence of ZnO nanorods on the copper ion diffusion behavior and filament morphology was analyzed through characteristic current fitting of CBRAM devices. Experimental results demonstrate that ZnO nanorod-embedded CBRAM exhibits significantly enhanced memory performance, characterized by superior switching uniformity compared to devices lacking ZnO nanorods. Furthermore, CBRAM devices incorporating copper-doped ZnO nanorods demonstrate even greater memory performance, achieving exceptional uniformity. This approach not only reduces operating voltage and energy consumption but also improves switching uniformity and enhances the overall stability of CBRAM devices, making them more viable for advanced CIM applications.

In this study, the effect of radiation on an amorphous semiconductor InWZnO (IWZO) thin film has been investigated. From the x-ray photoelectron spectroscopy in-depth analysis, most of the oxygen vacancies in pristine IWZO films are located at the bottom of the film. As the radiation dose increases, the proportion of oxygen vacancies at the bottom of the film increases. However, the top of the IWZO film is hardly affected by the radiation dose. In addition, the resistive switching behavior of an IWZO memristor under irradiation has also been investigated. A forming process and a bipolar I–V curve of the IWZO memristor vary with the radiation dose. The high resistance state of the memristor is significantly degraded at a radiation dose of 1000 krad, which is due to the more defects in the IWZO film. The retention time of the IWZO memristor is up to 10⁴ s at 85 °C with 100 krad. The damaged site in the IWZO film is observed and fabricated into memristors under radiation. The IWZO film as the resistive switching layer exhibits great potential in harsh environments such as polar regions, space technology, nuclear military, and medical imaging.

In this study, the influence of oxygen concentration in InWZnO (IWZO), which was used as the switching layer of conductive bridge random access memory, (CBRAM) is investigated. With different oxygen flow during the sputtering process, the IWZO film can be fabricated with different oxygen concentrations and different oxygen vacancy distribution. In addition, the electrical characteristics of CBRAM device with different oxygen concentration are compared and further analyzed with an atomic force microscope and X-ray photoelectron spectrum. Furthermore, a stacking structure with different bilayer switching is also systematically discussed. Compared with an interchange stacking layer and other single layer memory, the CBRAM with specific stacking sequence of bilayer oxygen-poor/-rich IWZO (IWZOx/IWZOy, x < y) exhibits more stable distribution of a resistance state and also better endurance (more than 3 × 10⁴ cycles). Meanwhile, the memory window of IWZOx/IWZOy can even be maintained over 10⁴ s at 85 °C. Those improvements can be attributed to the oxygen vacancy distribution in switching layers, which may create a suitable environment for the conductive filament formation or rupture. Therefore, it is believed that the specific stacking bilayer IWZO CBRAM might further pave the way for emerging memory applications.