Memristors are among the most promising devices for building neural processors and non-volatile memory. One circuit design stage involves modeling, which includes the option of memristor models. The most common approach is the use of compact models, the accuracy of which is often determined by the accuracy of their parameter extraction from experiment results. In this paper, a review of existing extraction methods was performed and new parameter extraction algorithms for an adaptive compact model were proposed. The effectiveness of the developed methods was confirmed for the volt-ampere characteristic of a memristor with a vertical structure: TiN/Hf_xAl_1−xO_y/HfO₂/TiN.

The propagation process of the surface acoustic waves (SAW) and the pseudo-surface acoustic waves (PSAW) in a bonded layered structure of a 41° YX-cut of a LiNbO₃ crystal/Si(100) crystal was investigated. The scanning electron microscopy (SEM) method,in the low-energy secondary electrons registration mode, made it possible to visualize the SAW and PSAW in the LiNbO₃/Si layered structure. The process of the SAW and PSAW propagation in a LiNbO₃/Si layered structure and in a bulk 41° YX-cut of a LiNbO₃ crystal were compared. It was demonstrated that the SAW velocities in the layered LiNbO₃/Si structure exceed the typical SAW velocities for LiNbO₃ and Si single crystals. In the layered structure, the SAW and PSAW velocities were 4062 m/s, 4731 m/s, and 5871 m/s. It was also demonstrated that the PSAW velocities are the same in the LiNbO₃/Si layered structure and in the bulk 41° YX-cut of a LiNbO₃ crystal.

The compatibility of memristor materials with advanced complementary metal-oxide-semiconductor (CMOS) technology is a key factor for microelectronics element base manufacturing. Therefore, we continued studying previously fabricated CMOS-compatible Ni/Si₃N₄/SiO₂/p+-Si samples. We approximated volt-ampere characteristics (VAC) at different temperatures using the general form of the spatial charge-limiting current (SCLC) equation assuming exponential and Gaussian trap distribution within the band gap of Si₃N₄. Our approximation demonstrated better experimental data matching compared to previous work, where the approximation was based on the uniform trap distribution law. Further, we performed another additional sample measurement set of the samples to evaluate the parameters of the low-resistance state (LRS) variations at different temperatures. Analysis of these measurements allowed us to estimate the temperatures at which the samples will retain LRS for 10 years.

The memristor is one of the modern microelectronics key devices. Due to the nanometer scale and complex processes physic, the development of memristor state study approaches faces limitations of classical methods to observe the processes. We propose a new approach to investigate the degradation of six Ni/Si₃N₄/p+Si-based memristors up to their failure. The basis of the proposed idea is the joint analysis of resistance change curves with the volt-ampere characteristics registered by the auxiliary signal. The paper considers the existence of stable switching regions of the high-resistance state and their interpretation as stable states in which the device evolves. The stable regions’ volt-ampere characteristics were simulated using a compact mobility modification model and a first-presented target function to solve the optimization problem.

The use of low-dimensional materials is a promising approach to improve the key characteristics of memristors. The development process includes modeling, but the question of the most common compact model applicability to the modeling of device characteristics with the inclusion of low-dimensional materials remains open. In this paper, a comparative analysis of linear and nonlinear drift as well as threshold models was conducted. For this purpose, the assumption of the relationship between the results of the optimization of the volt–ampere characteristic loop and the descriptive ability of the model was used. A global random search algorithm was used to solve the optimization problem, and an error function with the inclusion of a regularizer was developed to estimate the loop features. Based on the characteristic features derived through meta-analysis, synthetic volt–ampere characteristic contours were built and the results of their approximation by different models were compared. For every model, the quality of the threshold voltage estimation was evaluated, the forms of the memristor potential functions and dynamic attractors associated with experimental contours on graphene oxide were calculated.