This study explored the impact of micropattern designs on slurry dynamics in chemical mechanical planarization (CMP), focusing on pressure distribution, slurry flow and streamlines, abrasive residence time, and drag force. Using computational fluid dynamics (CFD) simulations, we examined how different pad patterns, including circle, triangle, square, ellipse, and square-circle, affect slurry behavior. It was found that the elliptical patterns caused the largest pressure drops due to their shape and arrangement, thus affecting material removal rates. Velocity analyses revealed that mean residence times and slurry flow velocities vary for different patterns, impacting the effectiveness of material removal. The results for the square-circle pattern showed a balanced slurry interaction, optimizing MRR by ensuring uniform slurry distribution and minimizing recirculation. The simulated drag forces exerted by the slurry on the pad patterns were correlated with the oxide removal rates. Particle tracking further illustrated how pattern design affects abrasive particle distribution, which is crucial for uniform polishing. The study identified the square-circle pattern as the optimal pattern design for TEOS film removal, highlighting the importance of pad pattern geometry in enhancing CMP efficiency. The presented simulation study highlighted the significance of micropattern design in advancing semiconductor manufacturing, offering insights for future pad design innovations.

Chemical mechanical polishing (CMP) is a process that uses mechanical abrasive particles and chemical interaction in slurry to remove materials from the surface of films. With advancements in semiconductor device technology applying various materials and structures, SiO2 (silica) nanoparticles are the most chosen abrasives in CMP slurries. Therefore, understanding and developing silica nanoparticles are crucial for achieving CMP performance, such as removal rates, selectivity, decreasing defects, and high uniformity and flatness. However, despite the abundance of reviews on silica nanoparticles, there is a notable gap in the literature addressing their role as abrasives in CMP slurries. This review offers an in-depth exploration of silica nanoparticle synthesis and modification methods detailing their impact on nanoparticles characteristics and CMP performance. Further, we also address the unique properties of silica nanoparticles, such as hardness, size distribution, and surface properties, and the significant contribution of silica nanoparticles to CMP results. This review is expected to interest researchers and practitioners in semiconductor manufacturing and materials science.

Topography of tungsten should be assured at a minimum through chemical mechanical planarization (CMP) in the metal gate structures (e.g., buried gates, replacement metal gates) and via contact in the middle of line (MOL) process for sub−7 nm semiconductor applications. However, excessive tungsten dissolution during the CMP process that results from high oxidizer concentrations and acidic atmospheres results in poor tungsten topography. In this study, we report a novel strategy to improve the tungsten topography by suppressing tungsten dissolution via coordination complex formations between picolinic acid and tungsten oxide. With 1.5 wt% picolinic acid for the inhibitor, the dissolution rate of tungsten was dramatically attenuated, and improved topography with a R_a value of 7.8 nm were demonstrated while validating CMP removal rate.