High-performance pressure sensors have attracted considerable attention recently due to their promising applications in touch displays, wearable electronics, human–machine interfaces, and real-time physiological signal perception. However, the “functionality” of a sensor is generally incompatible with “simple” fabrication strategies. Therefore, strategies that are less equipment-intensive and less expensive are required for enhancing the sensor performance. Here, we propose a flexible piezoresistive pressure sensor based on MXene–textile prepared by a facile dip-coating process. Benefiting from the excellent electrical properties of MXene and the abundant wavy surface of cotton textile, this pressure sensor exhibits high sensitivity (12.095 kPa⁻¹ for the range 29–40 kPa and 3.844 kPa⁻¹ for the range less than 29 kPa) with a rapid response time of 26 ms, and excellent cycling stability (5600 cycles). The real-time monitoring of human physiological signals such as wrist pulse, voice detection, and finger movements can be achieved by using this MXene–textile sensor. In addition, sensory arrays were successfully applied in the pressure distribution mapping of a key, demonstrating that the pressure sensor can be used as part of wearable devices and human–machine interfaces to sense pressure.

In this article, the effects of two-step annealing at the active layer (AL) and the completed device on the electrical properties and stability of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistor (TFT) are studied. The subthreshold swing (SS) and stability of a-IGZO TFT devices are greatly improved, and the hump phenomenon under the negative bias illumination stability (NIBS) is particularly well suppressed when the TFT devices are treated with an optimum two-step annealing process (200 °C of preannealing and 300 °C of postannealing). Based on the analysis of the surface morphology, internal chemical state, and electrical properties of the IGZO thin film, an improvement of two-step annealing devices may be due to hydrogen filling the oxygen vacancies in the AL and well passivating the defects between insulating layer and AL. The result illustrates that two-step annealing is a promising method for IGZO TFT, which is not only beneficial to improve the stability of the device but also suppresses the hump phenomenon in NIBS.

The development of flexible and highly sensitive pressure sensors is critical for the realization of wearable health monitors and electronic skins. However, the sensitivity, flexibility, and large-area fabrication of pressure sensors remain the key challenges for their practical applications. In this paper, we present a novel pressure sensing system in an amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistor (TFT) configuration comprised of a microstructured polydimethylsiloxane (PDMS) capacitor fabricated on a 200 mm ×200 mm flexible substrate. The microstructured PDMS thin film shows the average sensitivity of 0.1 kPa-1and response time of < 190 ms for the pressure of 12 kPa. Through the amplification effect of the a-IGZO TFT, the device shows a high sensitivity in the subthreshold region for ultra-low-pressure regime (≤1.5 kPa) detection and good linearity in the linear region for low-pressure regime (≤7 kPa) detection. These results demonstrate a novel approach to pressure-sensing intelligent products.

In this paper, W-doped ZnSnO (WZTO) thin films and TFT devices are successfully fabricated by a wet-solution technique. The impact of W doping on the film structure, surface morphology, optical properties and chemical compositions of ZTO thin films is analyzed by atomic force microscopy, X-ray diffraction, UV-visible spectroscopy and X-ray photoelectron spectroscopy. The results show that the WZTO thin films have a smooth surface, amorphous structure and fewer oxygen vacancies with increasing W levels. The oxygen vacancy concentration of WZTO thin films is reduced from 40% to 27% with W incorporation. Compared with films free of W doping, for example ZnSnO TFTs, the positive bias stress stability of WZTO TFTs and long-term stability in air are improved obviously and the shift of the threshold voltage (V_T) is restrained about six times. The critical reason for the improvement of the ZTO TFT properties is attributed to W-doping, wherein the suppression of oxygen vacancies by W ions plays a dominant role in changing the performance of ZTO thin films and the stability of TFTs.