Randomly-distributed Si inverted pyramid arrays and CoS ₂ nanocrystals were synthesized on Si wafers for boosting photoelectrochemical water reduction.

Br-rich CsPbBr ₃ NCs with a PLQY of 97% were prepared using an excess Br of Br/Pb of 4.5/1. Br interstitials form the strong localized states, being responsible for the high emission efficiency.

Realizing the anisotropic deep trenching of GaN without surface damage is essential for the fabrication of GaN-based devices. However, traditional dry etching technologies introduce irreversible damage to GaN and degrade the performance of the device. In this paper, we demonstrate a damage-free, rapid metal-assisted chemical etching (MacEtch) method and perform an anisotropic, deep trenching of a GaN array. Regular GaN microarrays are fabricated based on the proposed method, in which CuSO₄ and HF are adopted as etchants while ultraviolet light and Ni/Ag mask are applied to catalyze the etching process of GaN, reaching an etching rate of 100 nm/min. We comprehensively explore the etching mechanism by adopting three different patterns, comparing a Ni/Ag mask with a SiN mask, and adjusting the etchant proportion. Under the catalytic role of Ni/Ag, the GaN etching rate nearby the metal mask is much faster than that of other parts, which contributes to the formation of deep trenches. Furthermore, an optimized etchant is studied to restrain the disorder accumulation of excessive Cu particles and guarantee a continuous etching result. Notably, our work presents a novel low-cost MacEtch method to achieve GaN deep etching at room temperature, which may promote the evolution of GaN-based device fabrication.

Black silicon electrodes with inverted pyramid arrays (SiIPs) are promising for efficient photoelectrochemical water splitting due to their excellent photoelectric properties and quasi-hydrophilicity. In this work, an elaborate study on microstructure regulation of SiIP photocathodes is reported. We find that on SiIPs where sidewalls have been processed with copper-assisted chemical etching (Cu-ACE), there are vast numbers of micro-pits distributed (deep holes and shallow grooves) that exactly determine electrode performance, which is a result of homogeneous Cu²⁺ oxidation of Si. Furthermore, SiIP microstructural features can be effectively adjusted via controlling the etchant composition and introducing alkali post-treatment. Taking the trade-off between light trapping ability and charge separation capacity into consideration, we optimized the hydrogen evolution reaction (HER) activity of a SiIP photocathode, and its onset potential was decreased to −0.35 V vs. RHE. On this basis, we constructed reliable heterojunctions to further improve the sluggish HER kinetics. The optimized SiIPs/TiO₂/MoS_x cathode exhibits a considerable photocurrent density of 9.45 mA cm⁻² at zero HER overpotential for 18 h in acidic media. Notably, our work presents a detailed physical insight into micro-pit formation and elimination in Cu-ACE, and describes the dependency of SiIP-based electrode performance on the microstructure morphology, paving a new way for its potential application in unbiased overall water splitting.