We report the growth of high-quality AlN films on nano-patterned sapphire substrates (NPSSs) by graphene-assisted quasi-van der Waals epitaxy, which enables rapid coalescence to shorten the growth time. Due to the presence of graphene (Gr), AlN tends to be two-dimensional laterally expanded on the NPSS, leading to the reduction of dislocation density and strain release in the AlN epitaxial layer. Using first-principles calculations, we confirm that Gr can reduce the surface migration barrier and promote the lateral migration of metal Al atoms. Furthermore, the electroluminescence results of deep ultraviolet light emitting diodes (DUV-LEDs) have exhibited greatly enhanced emission located at 280 nm by inserting the Gr interlayer. The present work may provide the potential to solve the bottleneck of high efficiency DUV-LED.

We report the synthesis of CH₃NH₃Pb(Br_3−yX_y) (X=Cl and I) single crystals via a stepwise temperature control approach. High-quality CH₃NH₃Pb(Br_3−yX_y) crystals with a tunable bandgap from 1.92eV to 2.53eV have been prepared successfully in this way. And further experiments revealed the influence of halogen content and preparation temperature on the structural and optical properties of these crystals. It is observed that chlorine can lower the critical nucleation energy, which results in crystallizing at lower temperature with the chlorine content increasing, while the nucleation energy increases slowly with increasing iodine content. Moreover, in contrast to Frank–van der Merwe growth with low heating rate, high heating rate leads to a mass of small size single crystals and Stranski-Krastanov growth. The single crystals with tunable band gap and impressive characteristics enable us to fabricate high performance photodetectors for different wavelengths.

Randomly-distributed Si inverted pyramid arrays and CoS ₂ nanocrystals were synthesized on Si wafers for boosting photoelectrochemical water reduction.

We report an enhanced performance of multi-scale textured black silicon solar cell with power conversion efficiency of 15.5% by using anisotropic tetramethylammonium hydroxide etching to control the recombination. The multi-scale texture can effectively reduce the surface reflectance in a wide wavelength range, and both the surface and Auger recombination can be effectively suppressed by etching the samples after the n⁺⁺ emitter formed. Our result shows that the reformed solar cell has higher conversion efficiency than that of conventional pyramid textured cell (15.3%). This work presents an effective method for improving the performance of nanostructured silicon solar cells.

High density of defects and stress owing to the lattice and thermal mismatch between nitride materials and heterogeneous substrates have always been important problems and limit the development of nitride materials. In this paper, AlGaN light-emitting diodes (LEDs) were grown directly on a single-layer graphene-covered Si (111) substrate by metal organic chemical vapor deposition (MOCVD) without a metal catalyst. The nanorods was nucleated by AlGaN nucleation islands with a 35% Al composition, and included n-AlGaN, 6 period of AlGaN multiple quantum wells (MQWs), and p-AlGaN. Scanning electron microscopy (SEM) and electron backscatter diffraction (EBSD) showed that the nanorods were vertically aligned and had an accordant orientation along the [0001] direction. The structure of AlGaN nanorod LEDs was investigated by scanning transmission electron microscopy (STEM). Raman measurements of graphene before and after MOCVD growth revealed the graphene could withstand the high temperature and ammonia atmosphere in MOCVD. Photoluminescence (PL) and cathodoluminescence (CL) characterized an emission at ~325 nm and demonstrated the low defects density in AlGaN nanorod LEDs.