Single-crystal SiC is a typical third-generation semiconductor power-device material because of its excellent electronic and thermal properties. An ultrasmooth surface with atomic surface roughness that is scratch free and subsurface damage (SSD) free is indispensable before its application. As the last process to reduce the surface roughness and remove surface defects, precision polishing of single-crystal SiC is essential. In this paper, precision polishing technologies for 4H-SiC and 6H-SiC, which are the most commonly used polytypes of single-crystal SiC, such as chemical mechanical polishing (CMP), photocatalytic chemical mechanical polishing (PCMP), plasma-assisted polishing (PAP), electrochemical mechanical polishing (ECMP), and catalyst-referred etching (CARE), were reviewed and compared with emphasis on the experimental setup, polishing mechanism, material removal rate (MRR), and surface roughness. An atomically smooth surface without SSD can be obtained by CMP, PCMP, PAP, and CARE for single-crystal SiC. However, their MRRs are meager, and the waste treatment after CMP is difficult and expensive. Moreover, PAP’s operation is poor due to the complex polishing system, plasma generation, and irradiation devices. A high MRR can be achieved by ECMP. In addition, it is an environmentally friendly precision polishing process for single-crystal SiC since the neutral salt solution is generally used as the electrolyte in ECMP. However, the formation of the egglike protrusions at the oxide/SiC interface during anodic oxidation would lead to a bigger surface roughness after ECMP than that after PAP is processed. The HF solution used in CARE was toxic, and Pt was particularly expensive. Ultrasonic vibration-assisted single-crystal SiC polishing and electrolyte plasma polishing (EPP) were discussed; furthermore, the research direction of further improving the surface quality and MRR of single-crystal SiC was prospected.

Single-crystal 4H-SiC is a typical third-generation semiconductor power-device material because of its excellent electronic and thermal properties. A novel polishing technique that combines plasma electrolytic processing and mechanical polishing (PEP-MP) was proposed in order to polish single-crystal 4H-SiC surfaces effectively. In the PEP-MP process, the single-crystal 4H-SiC surface is modified into a soft oxide layer, which is mainly made of SiO₂ and a small amount of silicon oxycarbide by plasma electrolytic processing. Then, the modified oxide layer is easily removed by soft abrasives such as CeO₂, whose hardness is much lower than that of single-crystal 4H-SiC. Finally a scratch-free and damage-free surface can be obtained. The hardness of the single-crystal 4H-SiC surface is greatly decreased from 2891.03 to 72.61 HV after plasma electrolytic processing. By scanning electron microscopy (SEM) and X-ray Photoelectron Spectroscopy (XPS) observation, the plasma electrolytic processing behaviors of single-crystal 4H-SiC are investigated. The scanning white light interferometer (SWLI) images of 4H-SiC surface processed by PEP-MP for 30 s shows that an ultra-smooth surface is obtained and the surface roughness decreased from Sz 607 nm, Ra 64.5 nm to Sz 60.1 nm, Ra 8.1 nm and the material removal rate (MRR) of PEP-MP is about 21.8 μm/h.

The trochoidal milling mode is widely used in high-speed machining, and due to good adaptability and flexible posture adjustment, ball-end milling cutters are conducive to complex surface machining with this mode. However, the processes of material removal and formation of machined micro surfaces are very difficult to describe as the profile of cutter teeth is complex and the trajectory direction changes continuously during the trochoidal milling process. A modeling method for the generation of micro surface topography of ball-end milling in the trochoidal milling mode is put forward. In this method, the locus equation of each cutter tooth is established based on the principle of homogeneous coordinate transformation, after which a Z-MAP algorithm is designed to simulate the micro surface topography. The Z-MAP algorithm can quickly obtain the part grid nodes potentially swept by the cutter tooth within a unit time step through the establishment of servo rectangular encirclement and instantaneous sweeping quadrilateral of the element of cutter teeth; the part grid nodes actually swept are further determined through an angle summation method, and the height coordinate is calculated with the method of linear interpolation according to Taylor’s formula of multivariate functions. Experiments showed that the micro surface topography resulting from ball-end milling in the trochoidal milling mode had high consistency with the simulation, which indicates that the proposed method can predict micro surface topography in practical manufacturing. In addition, a comparison of micro surface topography between trochoidal milling and ordinary straight-linear milling was conducted, and the results showed that the former was overall superior to the latter in resulting characteristics. Based on this conclusion, the influences of cutting parameters of ball-end trochoidal milling on surface characteristics, particularly amplitude and function, were analyzed according to the simulated micro surface topography data.