Single-crystal SiC is a typical third-generation semiconductor power-device material because of its excellent electronic and thermal properties. An ultrasmooth surface with atomic surface roughness that is scratch free and subsurface damage (SSD) free is indispensable before its application. As the last process to reduce the surface roughness and remove surface defects, precision polishing of single-crystal SiC is essential. In this paper, precision polishing technologies for 4H-SiC and 6H-SiC, which are the most commonly used polytypes of single-crystal SiC, such as chemical mechanical polishing (CMP), photocatalytic chemical mechanical polishing (PCMP), plasma-assisted polishing (PAP), electrochemical mechanical polishing (ECMP), and catalyst-referred etching (CARE), were reviewed and compared with emphasis on the experimental setup, polishing mechanism, material removal rate (MRR), and surface roughness. An atomically smooth surface without SSD can be obtained by CMP, PCMP, PAP, and CARE for single-crystal SiC. However, their MRRs are meager, and the waste treatment after CMP is difficult and expensive. Moreover, PAP’s operation is poor due to the complex polishing system, plasma generation, and irradiation devices. A high MRR can be achieved by ECMP. In addition, it is an environmentally friendly precision polishing process for single-crystal SiC since the neutral salt solution is generally used as the electrolyte in ECMP. However, the formation of the egglike protrusions at the oxide/SiC interface during anodic oxidation would lead to a bigger surface roughness after ECMP than that after PAP is processed. The HF solution used in CARE was toxic, and Pt was particularly expensive. Ultrasonic vibration-assisted single-crystal SiC polishing and electrolyte plasma polishing (EPP) were discussed; furthermore, the research direction of further improving the surface quality and MRR of single-crystal SiC was prospected.

Single-crystal 4H-SiC is a typical third-generation semiconductor power-device material because of its excellent electronic and thermal properties. A novel polishing technique that combines plasma electrolytic processing and mechanical polishing (PEP-MP) was proposed in order to polish single-crystal 4H-SiC surfaces effectively. In the PEP-MP process, the single-crystal 4H-SiC surface is modified into a soft oxide layer, which is mainly made of SiO₂ and a small amount of silicon oxycarbide by plasma electrolytic processing. Then, the modified oxide layer is easily removed by soft abrasives such as CeO₂, whose hardness is much lower than that of single-crystal 4H-SiC. Finally a scratch-free and damage-free surface can be obtained. The hardness of the single-crystal 4H-SiC surface is greatly decreased from 2891.03 to 72.61 HV after plasma electrolytic processing. By scanning electron microscopy (SEM) and X-ray Photoelectron Spectroscopy (XPS) observation, the plasma electrolytic processing behaviors of single-crystal 4H-SiC are investigated. The scanning white light interferometer (SWLI) images of 4H-SiC surface processed by PEP-MP for 30 s shows that an ultra-smooth surface is obtained and the surface roughness decreased from Sz 607 nm, Ra 64.5 nm to Sz 60.1 nm, Ra 8.1 nm and the material removal rate (MRR) of PEP-MP is about 21.8 μm/h.

Multi-column envelope engaging couples have been proposed for single screw compressors to reduce the friction and prolong the operational life. However, little is mentioned about the relationship between columns at opposite sides of the star-wheel teeth. An imbalance in the lubricant film forces would appear and influence the lubrication between the tooth and the groove. During a real design process, it is necessary to try several times for each different type of compressor to find the optimal combination of columns. In part, due to the large number of columns, it also makes both manufacturing processing and product testing difficult. In this paper, a synergy-column design method and its related manufacturing methods are presented. The locations and relationships of the designed columns can be prescribed by given the tooth width. Manufacturing of the rotor and star-wheel shows the new design method can be more efficient through processing. The stable operation results prove that the synergy-column envelope meshing pair can solve the star-wheel’s wear-out problem.

Single crystal silicon wafers are often used as substrate material for integrated circuits. Often the wafer is cut by a wire with fixed abrasive diamond owning to a narrow kerf and a low cutting force. The cutting force changes during the process as the direction of wire movement continuously reverses (i.e., reciprocates), which may cause the wire saw to break, the wafer to collapse, and the wafer surface roughness to decrease even if the wire saw tension and the contact length between the wire and the wafer are fixed. In this work, a cutting force model including both normal and tangential forces was established to determine the relationship between the normal and tangential forces and the commanded wire speed. Separate controllers were developed to regulate both the normal force and the tangential force by adjusting the wire velocity. Experimental studies were conducted for wire saw processing of single crystal silicon wafers. Compared with a process using constant wire velocity, regulating the normal force can significantly reduce the processing time and the wafer surface roughness. The average improvements in processing time and wafer surface roughness are approximately 11% and 56%, respectively, when using normal force control, and approximately 29% and 30%, respectively, when using tangential force control. The results show that the normal and tangential forces can be well regulated during the machining process. In addition, the wafer surface roughness and machining time were lower in both experiments where the forces were regulated than in the experiment where a constant wire velocity was used. This paper demonstrates that the novel concept of regulating process forces in wire saw machining by adjusting the wire velocity can be used to optimize the cutting process of single crystal silicon, making the process more productive while decreasing the part roughness.

The dynamic performance of mechanical systems is seriously affected by the stiffness of mechanical joints. The tool holder system of the deep hole machine tool was taken as the object; based on the modal correlation of experiment and finite element simulation, a simple and practical method was proposed to obtain the joint stiffness of the tool holder system under the structure form of the tool overhang of 200 mm. For the same tool holder system, the simulation and experimental analysis were carried out with different structural forms of tool overhang of 300 and 400 mm, which further verified the correctness and feasibility of the method for obtaining the joint stiffness, as well as provided a new idea and certain theoretical basis for extracting the joint stiffness of the tool holder system in deep hole machining.

Silicon carbide (SiC) is widely used in high-power, high-frequency, and high-temperature electronic devices due to its excellent physical and chemical properties. However, its high hardness and chemical inertness make it difficult to achieve efficient and damage-free ultra-smooth surface processing with traditional polishing methods. This paper proposes a novel ultrasonic-assistance microarc plasma polishing (UMPP) method for high-quality and high-efficiency polishing of 4H-SiC. This study introduces a novel Ultrasonic-assisted Microarc Plasma Polishing (UMPP) method for achieving high-efficiency, high-quality surface finishing of 4H-SiC. The technique innovatively combines ultrasonic vibration with microarc plasma oxidation in a neutral NaCl electrolyte to overcome the limitations of conventional polishing methods. The UMPP process first generates a soft, porous oxide layer (primarily SiO₂) on the SiC surface through plasma discharge, which is then gently removed using soft CeO₂ abrasives. The key finding is that ultrasonic assistance synergistically enhances the oxidation process, leading to a thicker and more porous oxide layer that is more easily removed. Experimental results demonstrate that UMPP achieves a remarkably high material removal rate (MRR) of 21.7 μm/h while simultaneously delivering an ultra-smooth surface with a roughness (Ra) of 0.54 nm. Compared to the process without ultrasonic assistance, UMPP provides a 21.9% increase in MRR and a 28% reduction in Ra. This work establishes UMPP as a highly promising and efficient polishing strategy for hard and inert materials like SiC, offering a superior combination of speed and surface quality that is difficult to achieve with existing techniques.