Single-crystal SiC is a typical third-generation semiconductor power-device material because of its excellent electronic and thermal properties. An ultrasmooth surface with atomic surface roughness that is scratch free and subsurface damage (SSD) free is indispensable before its application. As the last process to reduce the surface roughness and remove surface defects, precision polishing of single-crystal SiC is essential. In this paper, precision polishing technologies for 4H-SiC and 6H-SiC, which are the most commonly used polytypes of single-crystal SiC, such as chemical mechanical polishing (CMP), photocatalytic chemical mechanical polishing (PCMP), plasma-assisted polishing (PAP), electrochemical mechanical polishing (ECMP), and catalyst-referred etching (CARE), were reviewed and compared with emphasis on the experimental setup, polishing mechanism, material removal rate (MRR), and surface roughness. An atomically smooth surface without SSD can be obtained by CMP, PCMP, PAP, and CARE for single-crystal SiC. However, their MRRs are meager, and the waste treatment after CMP is difficult and expensive. Moreover, PAP’s operation is poor due to the complex polishing system, plasma generation, and irradiation devices. A high MRR can be achieved by ECMP. In addition, it is an environmentally friendly precision polishing process for single-crystal SiC since the neutral salt solution is generally used as the electrolyte in ECMP. However, the formation of the egglike protrusions at the oxide/SiC interface during anodic oxidation would lead to a bigger surface roughness after ECMP than that after PAP is processed. The HF solution used in CARE was toxic, and Pt was particularly expensive. Ultrasonic vibration-assisted single-crystal SiC polishing and electrolyte plasma polishing (EPP) were discussed; furthermore, the research direction of further improving the surface quality and MRR of single-crystal SiC was prospected.

The gecko can achieve flexible climbing on various vertical walls and even ceilings, which is closely related to its unique foot adhesion system. In the past two decades, the mechanism of the gecko adhesion system has been studied in-depth, and a verity of gecko-inspired adhesives have been proposed. In addition to its strong adhesion, its easy detachment is also the key to achieving efficient climbing locomotion for geckos. A similar controllable adhesion characteristic is also key to the research into artificial gecko-inspired adhesives. In this paper, the structures, fabrication methods, and applications of gecko-inspired controllable adhesives are summarized for future reference in adhesive development. Firstly, the controllable adhesion mechanism of geckos is introduced. Then, the control mechanism, adhesion performance, and preparation methods of gecko-inspired controllable adhesives are described. Subsequently, various successful applications of gecko-inspired controllable adhesives are presented. Finally, future challenges and opportunities to develop gecko-inspired controllable adhesive are presented.

Free abrasive diamond wire saw machining is often used to cut hard and brittle materials, especially for wafers in the semiconductor and optoelectronics industries. Wire saws, both free and fixed abrasive, have excellent flexibility, as compared to inner circular saws, outer saws, and ribbon saws, as they produce a narrower kerf, lower cutting forces, and less material waste. However, fixed abrasive wire saw machining is being considered more and more due to its potential for increased productivity and the fact that it is more environmentally friendly as it does not use special coolants that must be carefully disposed. The cutting forces generated during the wire saw process strongly affect the quality of the produced parts. However, the relationship between these forces and the process parameters has only been explored qualitatively. Based on analyzing the forces generated from the chip formation and friction of a single abrasive, this study derives an analytical cutting force model for the wire saw machining process. The analytical model explains qualitative observations seen in the literature describing the relationship between the cutting forces and the wafer feed rate, wire velocity, and contact length between the wire and wafer. Extensive experimental work is conducted to validate the analytical force model. Silicon carbide (SiC) monocrystal, which is employed extensively in the fields of microelectronics and optoelectronics and is known to be particularly challenging to process due to its extremely high hardness and brittleness, is used as the material in these experimental studies. The results show that the analytical force model can predict the cutting forces when wire saw machining SiC monocrystal wafers with average errors between the experimental and predicted normal and tangential forces of 9.98% and 12.1%, respectively.

In this paper, theoretical models of the critical indentation depth and critical force on brittle materials using cleavage strength and contact theory are proposed. A Berkovich indenter is adopted for nanoindentation tests on a 4H-SiC single crystal sample to evaluate its mechanical behaviors. The stages of brittle material deformation (elastic, plastic, and brittle) can be characterized by the load versus indentation depth curves through the nanoindentation test. The curve of the elastic deformation stage follows the Hertz contact theory, and plastic deformation occurs at an indentation depth of up to 10 nm. The mechanism of 4H-SiC single crystal cracking is discussed, and the critical indentation depth and critical force for the plastic–brittle transition are obtained through the occurrence of the pop-in point. This shows that the theoretical results have good coherence with the test results. Both the values of the elastic modulus and hardness decrease as the crack length increases. In order to obtain more accurate mechanical property values in the nanoindentation test for brittle materials such as SiC, GaN, and sapphire, an appropriate load that avoids surface cracks should be adopted.