MoO₃/V₂O₅ hybrid nanobilayers are successfully prepared by the sol–gel method with a spin- coating technique followed by heat -treatment at 350 °C in order to achieve a good crystallinity. The composition, morphology, and microstructure of the nanobilayers are characterized by a scanning electron microscope (SEM) and X-ray diffractometer (XRD) that revealed the a grain size of around 20–30 nm, and belonging to the monoclinic phase. The samples show good reversibility in the cyclic voltammetry studies and exhibit an excellent response to the visible transmittance. The electrochromic (EC) window displayed an optical transmittance changes (ΔT) of 22.65% and 31.4% at 550 and 700 nm, respectively, with the rapid response time of about 8.2 s for coloration and 6.3 s for bleaching. The advantages, such as large optical transmittance changes, rapid electrochromism control speed, and excellent cycle durability, demonstrated in the electrochromic cell proves the potential application of MoO₃/V₂O₅ hybrid nanobilayers in electrochromic devices.

Thermal management has become one of the crucial factors in designing electronic equipment and therefore creating composites with high thermal conductivity is necessary. In this work, a new insight on hybrid filler strategy is proposed to enhance the thermal conductivity in Thermoplastic polyurethanes (TPU). Firstly, spherical aluminium oxide/hexagonal boron nitride (ABN) functional hybrid fillers are synthesized by the spray drying process. Then, ABN/TPU thermally conductive composite material is produced by melt mixing and hot pressing. Then, ABN/TPU thermally conductive composite material is produced by melt mixing and hot pressing. Our results demonstrate that the incorporation of spherical hybrid ABN filler assists in the formation of a three-dimensional continuous heat conduction structure that enhances the thermal conductivity of the neat thermoplastic TPU matrix. Hence, we present a valuable method for preparing the thermal interface materials (TIMs) with high thermal conductivity, and this method can also be applied to large-scale manufacturing.

The structure, magnetic properties, optical properties and adhesion efficiency of CoFeBY films were studied. Co₄₀Fe₄₀B₁₀Y₁₀ alloy was sputtered onto Si (100) with a thickness of 10–50 nm, and then annealed at room temperature, 100 °C, 200 °C and 300 °C for 1 h. X-ray diffraction (XRD) showed that the CoFeBY films deposited at room temperature are amorphous. Annealing at 100 °C gave the films enough thermal energy to change the structure from amorphous to crystalline. After annealing, the CoFeBY thin film showed a body-centered cubic (BCC) CoFeB (110) characteristic peak at 44°. However, the low-frequency alternative-current magnetic susceptibility (χ_ac) and saturation magnetization (M_S) increased with the increase of thickness. CoFeBY thin films had the highest χ_ac and M_S after annealing at 300 °C compared to that at other temperatures. After annealing at 300 °C, the surface energy of CoFeBY film is the maximum at 50 nm. Higher surface energy indicated stronger adhesion.

A facile solution process was employed to prepare CsPbI₃ as an anode material for Li-ion batteries. Rietveld refinement of the X-ray data confirms the orthorhombic phase of CsPbI₃ at room temperature. As obtained from bond valence calculations, strained bonds between Pb and I are identified within PbI₆ octahedral units. Morphological study shows that the as-prepared δ-CsPbI₃ forms a nanorod-like structure. The XPS analysis confirm the presence of Cs (3d, 4d), Pb (4d, 4f, 5d) and I (3p, 3d, 4d). The lithiation process involves both intercalation and conversion reactions, as confirmed by cyclic voltammetry (CV) and first-principles calculations. Impedance spectroscopy coupled with the distribution function of relaxation times identifies charge transfer processes due to Li metal foil and anode/electrolyte interfaces. An initial discharge capacity of 151 mAhg⁻¹ is found to continuously increase to reach a maximum of ~275 mAhg⁻¹ at 65 cycles, while it drops to ~240 mAhg⁻¹ at 75 cycles and then slowly decreases to 235 mAhg⁻¹ at 100 cycles. Considering the performance and structural integrity during electrochemical performance, δ-CsPbI₃ is a promising material for future Li-ion battery (LIB) application.

When B and V are added to CoFe material, the mechanical strength and spin tunneling polarization of a CoFe alloy can be improved and enhanced by the high tunneling magnetoresistance (TMR) ratio. Based on these reasons, it is worthwhile investigating Co₄₀Fe₄₀V₁₀B₁₀ films. In this work, X-ray diffraction (XRD) showed that Co₄₀Fe₄₀V₁₀B₁₀ thin films have some distinct phases including CoFe (110), CoFe (200), FeB (130), and V (110) diffracted peaks with the strongest diffracted peak for 30 nm. The lowest low-frequency alternate-current magnetic susceptibility (χ_ac) was detected at 30 nm because the large grain distribution inducing that high coercivity (H_c) enhances the spin coupling strength and low χ_ac. The external field (H_ext) had difficulty rotating in the spin state, hence, the spin sensitivity was reduced and the χ_ac value decreased due to increased surface roughness. The 20 mm thickness had the highest χ_ac 1.96 × 10⁻² value at 50 Hz of an optimal resonance frequency (f_res). The surface energy increased from 34.2 mJ/mm² to 51.5 mJ/mm² for Co₄₀Fe₄₀V₁₀B₁₀ films. High surface energy had corresponding strong adhesive performance. According to the magnetic and surface energy results, the optimal thickness is 20 nm due as it had the highest χ_ac and strong adhesion.

Cobalt Iron Yttrium (CoFeY) magnetic film was made using the sputtering technique in order to investigate the connection between the thickness and annealing procedures. The sample was amorphous as a result of an insufficient thermal driving force according to X-ray diffraction (XRD) examination. The maximum low-frequency alternate-current magnetic susceptibility (χ_ac) values were raised in correlation with the increased thickness and annealing temperatures because the thickness effect and Y addition improved the spin exchange coupling. The best value for a 50 nm film at annealing 300 °C for χ_ac was 0.20. Because electron carriers are less constrained in their conduction at thick film thickness and higher annealing temperatures, the electric resistivity and sheet resistance are lower. At a thickness of 40 nm, the film’s maximum surface energy during annealing at 300 °C was 28.7 mJ/mm². This study demonstrated the passage of photon signals through the film due to the thickness effect, which reduced transmittance. The best condition was found to be 50 nm with annealing at 300 °C in this investigation due to high χ_ac, strong adhesion, and low resistivity, which can be used in magnetic fields.