Highly nonlinear multimode optical integrated devices hold great promise for the emerging large-capacity mode division multiplexing (MDM) technology, and they correspondingly enable multimode optical signal processing at nodes of the MDM network. Here, we propose a highly nonlinear multimode organic-silicon slot waveguide (HN-OSSW) whose nonlinearity is greatly improved by the intensive optical field confinement in the nano-gaps filled with highly nonlinear organic material. Specifically, the achieved nonlinear coefficients of the HN-OSSW under TE0 and TE1 modes are estimated higher than 7000 W-1m-1 and 5800 W-1m-1, respectively. Also, by phase mismatch optimization, this nanostructure exhibits superior intramode four-wave mixing conversion efficiency but ignorable intermode crosstalk. Coupling efficiency of the mode multiplexer and the optimal nonlinear interaction length are discussed in detail. Based on the HN-OSSW, we then numerically demonstrate a multimode all-optical hexadecimal addition and subtraction for sixteen phase-shift keying (16PSK) signals with the operation rate of 1.28Tb/s. Six different logic operations including A+B-C, A+C-B, B+C-A, A+B, A-B and B-A are simultaneously obtained with good performance evaluations, indicating the promising prospect of the HN-OSSW applied in ultrafast multimode signal processing.

Silicon photonic integrated devices used for nonlinear optical signal processing play a key role in ultrafast switching, computing, and modern optical communications. However, current devices suffer from limited operation speeds and low conversion efficiencies due to the intrinsically low nonlinear index of silicon. In this paper, we experimentally demonstrate enhanced optical nonlinearity in a silicon–organic hybrid slot waveguide consisting of an ultranarrow slot waveguide coated with a highly nonlinear organic material. The fabricated slot area is as narrow as 45 nm, which is, to the best of our knowledge, the narrowest slot width that has been experimentally reported in silicon slot waveguides. The nonlinear coefficient of the proposed device with a length of 3 mm is measured to be up to 1.43 × 10 6 W − 1 km − 1 . Based on the nanostructure design, the conversion efficiencies of degenerate four-wave mixing showed enhancements of more than 12 dB and 5 dB compared to those measured for an identical device without the organic material and a silicon strip waveguide, respectively. As a proof of concept, all-optical canonical logic units based on the prepared device with two inputs at 40 Gb/s are analyzed. The obtained logic results showed clear temporal waveforms and wide-open eye diagrams with error-free performance, illustrating that our device has great potential for use in high-speed all-optical signal processing and high-performance computing in the nodes and terminals of optical networks.

Graphene silicon devices have attracted significant attention due to their outstanding electronic and optical properties. By electrically tuning the Fermi level of the monolayer graphene sheet, electro-optic (EO) modulators have been widely analyzed. Despite significant progress has been achieved on high-speed modulation with integrated graphene silicon waveguides, it remains challenging to realize a high modulation efficiency since the light absorption in graphene is limited. Here, we propose and experimentally demonstrate a high efficiency EO modulator using a graphene-assisted tapered silicon ring resonator, where the tapered zone is covered by a graphene/graphene capacitor. This graphene-assisted tapered zone strongly enhances the graphene-light interaction that the achieved static and dynamic modulation (1KHz) depths are up to 26 dB and 12 dB, respectively. Physical mechanism of the modulation based on this nanostructure is also discussed in detail. The proposed nanostructure provides a promising alternative method for high-performance EO modulator, which is essential for the on-chip optical communication, optical computing and optical signal processing.

The analogue of electromagnetically induced transparency in optical methods has shown great potential in slow light and sensing applications. Here, we experimentally demonstrated a coupled resonator induced transparency system with three cascaded ring coupled resonators in a silicon chip. The structure was modeled by using the transfer matrix method. Influences of various parameters including coupling ratio of couplers, waveguide loss and additional loss of couplers on transmission characteristic and group index have been investigated theoretically and numerically in detail. The transmission character of the system was measured by the vertical grating coupling method. The enhanced quality factor reached 1.22 × 10⁵. In addition, we further test the temperature performance of the device. The results provide a new method for the manipulation of light in highly integrated optical circuits and sensing applications.

This study presents the design and fabrication of an ultra-high-precision platinum thin-film temperature sensor without an adhesion layer, which effectively eliminates the performance degradation caused by adhesion layer diffusion during high-temperature annealing. A 1 μm thick platinum film was deposited on an alumina substrate via segmented magnetron sputtering, followed by annealing in air at temperatures ranging from 500 °C to 900 °C. The resistance-temperature relationships of the sensor were characterized over the 0 °C to 35 °C range under various annealing conditions, with a particular focus on the temperature coefficient of resistance (TCR). Morphological and grain size analyses of the platinum film were conducted using X-ray diffraction and scanning electron microscopy. Results indicate that optimal sensor performance was achieved with an annealing temperature of 800 °C for 2 hours, which leads to an increase in the TCR from 2.36×10⁻³/°C to 3. 65×10⁻³/°C. Precision calibration and stability tests show that the sensor achieved an excellent measurement accuracy of 0.0019 °C and a maximum temperature drift of only 0.0009 °C per month over a six-month period. These results indicate that the platinum thin-film sensor exhibits outstanding performance, making it particularly suitable for high-precision ocean temperature measurement applications.