Our previous research work indicated that highly boron doped polysilicon nanofilms (≤100 nm in thickness) have higher gauge factor (the maximum is ~34 for 80 nm-thick films) and better temperature stability than common polysilicon films (≥ 200nm in thickness) at the same doping levels. Therefore, in order to further analyze the influence of deposition temperature on the film structure and piezoresistance performance, the piezoresistive sensitivity, piezoresistive linearity (PRL) and resistance time drift (RTD) of 80 nm-thick highly boron doped polysilicon nanofilms (PSNFs) with different deposition temperatures were studied here. The tunneling piezoresistive model was established to explain the relationship between the measured gauge factors (GFs) and deposition temperature. It was seen that the piezoresistance coefficient (PRC) of composite grain boundaries is higher than that of grains and the magnitude of GF is dependent on the resistivity of grain boundary (GB) barriers and the weight of the resistivity of composite GBs in the film resistivity. In the investigations on PRL and RTD, the interstitial-vacancy (IV) model was established to model GBs as the accumulation of IV pairs. And the recrystallization of metastable IV pairs caused by material deformation or current excitation is considered as the prime reason for piezoresistive nonlinearity (PRNL) and RTD. Finally, the optimal deposition temperature for the improvement of film performance and reliability is about 620 °C and the high temperature annealing is not very effective in improving the piezoresistive performance of PSNFs deposited at lower temperatures.

In order to achieve the non-destructive testing and quality evaluation of stainless-steel resistance spot welding (RSW) joints, a portable ultrasonic spiral C-scan testing instrument was developed based on the principle of ultrasonic pulse reflection. A mathematical model for the quality evaluation of RSW joints was established, and the centroid of the ultrasonic C-scan image in the nugget zone of the RSW was determined based on the principle of static moment. The longest and shortest axes passing through the centroid in the image were extracted, and the ratio of the longest axis to the shortest axis (RLS) factor and the average of axis (AOA) factor were calculated, respectively, to evaluate the quality of the joint. To study the effectiveness of the detection results, tensile tests, and stereo analysis were conducted on the solder joints after sampling. The results indicate that this detection method can realize online detection and significantly improve the detection efficiency; the detection value of internal defect size is close to the true value with an error of 0.1 mm; the combination of RLS and AOA factors can be used to evaluate the mechanical properties of RSW joints. This technology can be used to solve the NDT, evaluate problems of RSW joints, and realize engineering applications.

To improve the reference potential stability of on-chip amperometric sensors, we propose a novel integrated Ag/AgCl reference electrode structure. This structure can refresh the saturated potassium chloride filling solution surrounding the Ag/AgCl electrode. We then designed a flow-through amperometric sensor and a multilayer microfluidic chip based on the integrated reference electrode. In order to improve the detection signal strength of the flow-through sensor, a numerical simulation model was established. The simulation results showed that a combination of (1) using a step-type detection cell structure that maintains micro-channel width while reducing micro-channel height, and (2) controlling the sample flow rate to limit the mass transfer of the sensor surface effectively, improves the detection signal strength. The step-type detection cell structure had dimensions of 200 μm × 200 μm × 100 μm (length × width × height), and the electroosmotic flow driving voltage was 120 V/cm. Finally, successful trace detection of Mg²⁺ and Pb²⁺ in the water was achieved using the amperometric sensor and microfluidic chip: detection limits were 5 μmol/L and 84 μmol/L. The preparation of an on-chip flow-through amperometric sensor with an integrated Ag/AgCl reference electrode will facilitate improved portability of microfluidic detection technology.