Oxygen defects in Hafnium Oxide (HfO₂)-based ferroelectric thin films not only are related to the cause of ferroelectricity but also affect the ferroelectric properties of the thin films. This paper, therefore, focuses on the fabrication of Zr:HfO₂ thin films by RF (Radio Frequency) magnetron sputtering with Zr-doped HfO₂ as the target and examines how oxygen flow impacts the oxygen vacancies and electrical properties thereof. Additionally, TiN thin-film electrodes were prepared by direct current (DC) magnetron reactive sputtering using nitrogen as the reaction gas, the influences of the substrate temperature on the film deposition rate and crystal phase structure were investigated, and the resultant thin-film electrodes with the lowest resistivity were obtained. Furthermore, the ferroelectric hysteresis loop and leakage current density of metal–insulator–metal (MIM) ferroelectric capacitors formed by annealing the 30 nm thick deposited Zr:HfO₂ sandwiched between the top and bottom TiN electrodes were measured. The results demonstrate that varying oxygen flow has a considerable effect on oxygen vacancies and the Zr doping concentration of deposited Zr:HfO₂ ferroelectric thin films. When the oxygen flow is set to 40 sccm (standard cubic centimeters per minute) and an external electric field strength of 2 mV/cm is applied, the remnant polarization reaches 18 μC/cm², with a decrease in the leakage current density of 10^5–6 orders of magnitude.

HfO₂ thin films were deposited on BK-7 glass substrates using an electron beam evaporation deposition (EBD) technique and then post-treated with argon and oxygen ions at an ion energy ranging from 800 to 1200 eV. The optical properties, laser damage resistance, and surface morphology of the thin films exposed to Ar ions and O₂ ions at various energies were studied. It was found that the two ion post-treatment methods after deposition were effective for improving the LIDT of HfO₂ thin films, but the mechanism for the improvement differs. The dense thin films highly resistant to laser damage can be obtained through Ar ion post-treatment at a certain ion energy. The laser-induced damage threshold (LIDT) of thin films after O₂ ion post-treatment was higher in comparison to those irradiated with Ar ion at the same ion energy.