A micro-pyramid structured thin film with a broad-band infrared antireflection property is designed and fabricated by using the single-point diamond turning (SPDT) technique and combined with nano-imprint lithography (NIL). A structure with dimensions of 10 μm pitch and 5 μm height is transferred from the copper mold to the silicon nitride optical film by using NIL and proportional inductively-coupled plasma (ICP) etching. Reflectance of the micro-optical surface is reduced below 1.0% over the infrared spectral range (800–2500 nm). A finite-difference-time-domain (FDTD) analysis indicates that this micro-structure can localize photons and enhance the absorption inside the micro-pyramid at long wavelengths. As described above, the micro-pyramid array has been integrated in an optical film successfully. Distinguishing from the traditional micro-optical components, considering the effect of refraction and diffraction, it is a valuable and flexible method to take account of the interference effect of optical film.

The films of vinylidene fluoride and trifluoroethylene (P(VDF-TrFE)) are widely used in piezoelectric tactile sensors, vibration energy harvesters, optical frequency conversion materials and organic photo-voltaic devices because of high electroactive, good optical and nonlinear optical properties, respectively. In this work, the multilayer structured ultrathin films were fabricated by the Langmuir–Blodgett technique, and the thickness per layer can be controlled accurately. It was found that as the collapse pressure of P(VDF-TrFE) (25:75) and the optimal dipping value are 60~70 mN/m and 15 mN/m, respectively, a high-density film can be obtained due to the compression of molecules. The surface topography and optical properties of the LB films were characterized by X-ray diffraction, white light interferometer and variable-angle spectrum ellipsometer. It was observed that the films are transparent in the visible region and IR-band, but show a high absorption in the UV band. Besides, the transmittance of the films ranges from 50% to 85% in the visible region, and it linearly decreases with the number of monolayers. The average thickness of per deposition layer is 2.447 nm, 2.688 nm and 2.072 nm, respectively, under three measurement methods. The calculated refractive index ranged from 1.443 to 1.598 (600~650 nm) by the Cauchy-model.

In this paper, the Fe³⁺ doped rutile phase TiO₂ nanotubes arrays (NTAs) were prepared in a low temperature water-assistant crystallization method. It is noteworthy that the Fe³⁺ doping hardly hinders either the crystallization of rutile TiO₂ NTAs or the highly-ordered nanotubular morphologies. Moreover, Fe³⁺ did not form other compound impurities, which indicated that Fe³⁺ substitute Ti⁴⁺ into the lattice of TiO₂. With the introduction of Fe³⁺, the light absorption range of TiO₂ NTAs extends from the ultraviolet band to the visible light range. Photocatalytic testing results indicate that Fe³⁺ doped TiO₂ NTAs can effectively improve the degradation rate of methyl orange aqueous solution in visible light, and the TiO₂ NTAs with 0.2 mol/L Fe³⁺ doping exhibits the highest photocatalytic degradation efficiency.

Oxygen defects in Hafnium Oxide (HfO₂)-based ferroelectric thin films not only are related to the cause of ferroelectricity but also affect the ferroelectric properties of the thin films. This paper, therefore, focuses on the fabrication of Zr:HfO₂ thin films by RF (Radio Frequency) magnetron sputtering with Zr-doped HfO₂ as the target and examines how oxygen flow impacts the oxygen vacancies and electrical properties thereof. Additionally, TiN thin-film electrodes were prepared by direct current (DC) magnetron reactive sputtering using nitrogen as the reaction gas, the influences of the substrate temperature on the film deposition rate and crystal phase structure were investigated, and the resultant thin-film electrodes with the lowest resistivity were obtained. Furthermore, the ferroelectric hysteresis loop and leakage current density of metal–insulator–metal (MIM) ferroelectric capacitors formed by annealing the 30 nm thick deposited Zr:HfO₂ sandwiched between the top and bottom TiN electrodes were measured. The results demonstrate that varying oxygen flow has a considerable effect on oxygen vacancies and the Zr doping concentration of deposited Zr:HfO₂ ferroelectric thin films. When the oxygen flow is set to 40 sccm (standard cubic centimeters per minute) and an external electric field strength of 2 mV/cm is applied, the remnant polarization reaches 18 μC/cm², with a decrease in the leakage current density of 10^5–6 orders of magnitude.

In this paper, synthetically using refraction, diffraction, and interference effects to achieve free manipulation of the focused optical field, we firstly present a photonic nanojet (PNJ) generated by a micropyramid, which is combined with multilayer thin films. The theory of total internal reflection (TIR) was creatively used to design the base angle of the micropyramid, and the size parameters and material properties of the microstructure were deduced via the expected optical field distribution. The as-designed bilayer micropyramid array was fabricated by using the single-point diamond turning (SPDT) technique, nanoimprint lithography (NIL), and proportional inductively coupled plasma (ICP) etching. After the investigation, the results of optical field measurement were highly consistent with those of the numerical simulation, and they were both within the theoretical calculation range. The bilayer micropyramid array PNJ enhanced the interference effect of incident and scattered fields; thus, the intensity of the focused light field reached 33.8-times that of the initial light, and the range of the focused light field was extended to 10.08$\lambda$. Moreover, the full width at half maximum (FWHM) of the focal spot achieved was 0.6$\lambda$, which was close to the diffraction limit.