Poshan Kumar Reddy Kuppam

Mr. Poshan Kumar Reddy Kuppam


Research Focus & Metrics

Academic Career Length

5Years (2022-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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5 January 2022 in Catalysts
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Journal Article
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PKPoshan Kumar Reddy Kuppam
Poshan Kumar Reddy Kuppam
KKK.M.M.D.K. Kimbulapitiya
K.M.M.D.K. Kimbulapitiya
Srikanth VuppalaSrikanth Vuppala
Srikanth Vuppala
KWKuangye Wang
Kuangye Wang
GRGUDDETI PHANEENDRA REDDY
GUDDETI PHANEENDRA REDDY
Yu-Lun ChuehYu-Lun Chueh
Yu-Lun Chueh
Replacing precious metals with low-cost metals is the best solution for large scale production. Copper is known for its excellent conductivity and thermal management applications. When it comes to hydrogen evolution reaction, it is highly unstable, especially in KOH solution. In this paper, we approached a simple method to reduce corrosion and improve the performance by depositing nickel-molybdenum oxide and nickel on copper substrates and the achieved tafel slopes of 115 mV/dec and 117 mV/dec at 10 mA/cm2. While at first, molybdenum oxide coated samples showed better performance after 100 cycles of stability tests, the onset potential rapidly changed. Cu-Ni, which was deposited using the electron gun evaporation (e-gun), has shown better performance with 0.28 V at 10 mA/cm2 and led to stability after 100 cycles. Our results show that when copper is alloyed with nickel, it acts as a promising hydrogen evolution reaction (HER) catalyst.

29 January 2025 in Catalysts
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Chandra Sekhar YellaturChandra Sekhar Yellatur
Chandra Sekhar Yellatur
VVVenkatachalam Vinothkumar
Venkatachalam Vinothkumar
PKPoshan Kumar Reddy Kuppam
Poshan Kumar Reddy Kuppam
JOJuwon Oh
Juwon Oh
Tae Hyun KimTae Hyun Kim
Tae Hyun Kim
The design of efficient and cost-effective electrocatalysts to replace Pt in an oxygen reduction reaction (ORR) is crucial for advancing proton exchange membrane fuel cell (PEMFC) technologies. This study synthesized Pd-Co bimetallic alloy nanoparticles supported on reduced graphene oxide (rGO) through a simple chemical-reduction method, making it suitable for low-cost, large-scale fabrication and significantly reducing the need for Pt. The nanostructures were systematically characterized using various analytical techniques, including X-ray diffraction (XRD), high-resolution transmission electron microscopy (HR-TEM), energy-dispersive X-ray spectroscopy (EDX), and cyclic voltammetry (CV). Electrochemical investigations revealed that the Pd-Co/rGO catalyst exhibits remarkable ORR performance in an alkaline environment, with an electrode-area-normalized activity rivaling that of the commercial Pt/C catalyst. Remarkably, Pd-Co/rGO demonstrated an onset potential (Eonset) of 0.944 V (vs. RHE) and a half-wave potential (E1/2) of 0.782 V (vs. RHE), highlighting its excellent ORR activity. Furthermore, the Pd-Co/rGO catalyst displayed superior methanol-tolerant ORR activity, outperforming Pt/C and monometallic Pd/rGO and Co/rGO systems. The enhanced electrocatalytic performance is attributed to the smallest size, consistent shape, and good dispersion of the alloy structure on the RGO surface. These findings establish Pd-Co/rGO as a promising alternative to Pt-based catalysts, addressing key challenges such as methanol crossover while advancing PEMFC technology in alkaline media.

23 October 2022 in Electronics
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SMSrikant Mohanty
Srikant Mohanty
PKPoshan Kumar Reddy Kuppam
Poshan Kumar Reddy Kuppam
Chienhung WuChienhung Wu
Chienhung Wu
PLPo Tsung Lee
Po Tsung Lee
KCKow-Ming Chang
Kow-Ming Chang
Yaswanth KuthatiYaswanth Kuthati
Yaswanth Kuthati
In this work, we investigated the effect of the tungsten nitride (WNx) diffusion barrier layer on the resistive switching operation of the aluminum nitride (AlN) based conductive bridge random access memory. The WNx barrier layer limits the diffusion of Cu ions in the AlN switching layer, hence controlling the formation of metallic conductive filament in the host layer. The device operated at a very low operating voltage with a Vset of 0.6 V and a Vreset of 0.4 V. The spatial and temporal switching variability were reduced significantly by inserting a barrier layer. The worst-case coefficient of variations (σ/µ) for HRS and LRS are 33% and 18%, respectively, when barrier layer devices are deployed, compared to 167% and 33% when the barrier layer is not present. With a barrier layer, the device exhibits data retention behavior for more than 104 s at 120 °C, whereas without a barrier layer, the device fails after 103 s. The device demonstrated synaptic behavior with long-term potentiation/depression (LTP/LTD) for 30 epochs by stimulating with a train of identical optimized pulses of 1 µs duration.