In this work, we investigated the effect of the tungsten nitride (WNx) diffusion barrier layer on the resistive switching operation of the aluminum nitride (AlN) based conductive bridge random access memory. The WNx barrier layer limits the diffusion of Cu ions in the AlN switching layer, hence controlling the formation of metallic conductive filament in the host layer. The device operated at a very low operating voltage with a V_set of 0.6 V and a V_reset of 0.4 V. The spatial and temporal switching variability were reduced significantly by inserting a barrier layer. The worst-case coefficient of variations (σ/µ) for HRS and LRS are 33% and 18%, respectively, when barrier layer devices are deployed, compared to 167% and 33% when the barrier layer is not present. With a barrier layer, the device exhibits data retention behavior for more than 10⁴ s at 120 °C, whereas without a barrier layer, the device fails after 10³ s. The device demonstrated synaptic behavior with long-term potentiation/depression (LTP/LTD) for 30 epochs by stimulating with a train of identical optimized pulses of 1 µs duration.

In this report, using two-dimensional photonic crystals (PhC) and a one-dimensional PhC nano-beam cavity, we realized the development of all-polymeric dye-lasers on a dye-doped, suspended poly-methylmethacrylate film with a wavelength-scale thickness. In addition to the characterization of basic lasing properties, we also evaluated its capacity to serve as an attachable strain sensor. Through experimentation, we confirmed the stable lasing performances of the dye-laser attaching on a rough surface. Moreover, we also theoretically studied the wavelength responses of the utilized PhC resonators to stretching strain and further improved them via the concept of strain shaping. The attachability and high strain sensing response of the presented thin film PhC dye-lasers demonstrate their potential as attachable strain sensors.