In this study, atmospheric nonequilibrium plasmas were generated with six gas species using a multi-gas plasma jet.

We have applied a micro droplet generator (μDG) for sample introduction of single selenized yeast cells into a sector field ICP-MS, which was operated in a fast scanning mode with sampling rates of up to 10 kHz, to measure single cells time resolved with 100 μs integration time. Selenized yeast cells have been used as a model system for preliminary investigation. The single cells to be measured have been embedded into droplets and it will be shown that the time duration of a single cell event always is about 400 to 500 μs, and thus comparable to the time duration of a droplet without a cell. A fixed droplet generation rate of 50 Hz produced equidistant signals in time of each droplet event and was advantageous to separate contribution from background and blank from the analytical signal. Open vessel digestion and a multielement analysis were performed with washed yeast cells and absolute amounts per single cell were determined for Na (0.91 fg), Mg (9.4 fg), Fe (5.9 fg), Cu (0.54 fg), Zn (1.2 fg) and Se (72 fg). Signal intensities from single cells have been measured for the elements Cu, Zn and Se, and histograms were calculated for about 1000 cell events. The mean elemental sensitivities measured here range from 0.7 counts per ag (Se) to 10 counts per ag (Zn) with RSD's from 49% (Zn) to 69% (Se) for about 1000 cell events.

A micro-droplet generator (μDG) sample introduction system was coupled to a sector field ICP-MS instrument to investigate the analytical figures of merit with respect to single cell analysis. The sector field instrument was operated for the first time in a fast scanning mode (E-scan) with the shortest time resolution of 100 μs to measure the single droplet time resolved and using the original detector in a pulse counting mode without modification of the existing electronics. For reduction of the droplet diameter a triple pulse mode of the droplet generator was applied and a droplet diameter down to 23 μm has been achieved for this investigation with a 100% transport efficiency of droplets. Signal duration times of single droplets of less than 500 μs have been measured. Overall detection efficiencies in the range of 10⁻³ counts per atom have been achieved and absolute limits of detection range between 120 ag for Fe and 1.1 ag for Mg as a mean value from 1000 droplet events.

Various gas atmospheric nonthermal plasmas were generated using a multigas plasma jet to treat microbial suspensions. Results indicated that carbon dioxide and nitrogen plasma had high sterilization effects. Carbon dioxide plasma, which generated the greatest amount of singlet oxygen than other gas plasmas, killed general bacteria and some fungi. On the other hand, nitrogen plasma, which generated the largest amount of OH radical, killed ≥6 log of 11 species of microorganisms, including general bacteria, fungi, acid-fast bacteria, spores, and viruses in 1–15 min. To identify reactive species responsible for bacterial inactivation, antioxidants were added to bacterial suspensions, which revealed that singlet oxygen and OH radicals had greatest inactivation effects.

Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages over traditional Si-based semiconductors in terms of high-power and high-frequency operations. As it has superior properties, such as high operating temperatures, high-frequency operation, high breakdown electric field, and enhanced radiation resistance, GaN is applied in various fields, such as power electronic devices, renewable energy systems, light-emitting diodes, and radio frequency (RF) electronic devices. For example, GaN-based high-electron-mobility transistors (HEMTs) are used widely in various applications, such as 5G cellular networks, satellite communication, and radar systems. When a current flows through the transistor channels during operation, the self-heating effect (SHE) deriving from joule heat generation causes a significant increase in the temperature. Increases in the channel temperature reduce the carrier mobility and cause a shift in the threshold voltage, resulting in significant performance degradation. Moreover, temperature increases cause substantial lifetime reductions. Accordingly, GaN-based HEMTs are operated at a low power, although they have demonstrated high RF output power potential. The SHE is expected to be even more important in future advanced technology designs, such as gate-all-around field-effect transistor (GAAFET) and three-dimensional (3D) IC architectures. Materials with high thermal conductivities, such as silicon carbide (SiC) and diamond, are good candidates as substrates for heat dissipation in GaN-based semiconductors. However, the thermal boundary resistance (TBR) of the GaN/substrate interface is a bottleneck for heat dissipation. This bottleneck should be reduced optimally to enable full employment of the high thermal conductivity of the substrates. Here, we comprehensively review the experimental and simulation studies that report TBRs in GaN-on-SiC and GaN-on-diamond devices. The effects of the growth methods, growth conditions, integration methods, and interlayer structures on the TBR are summarized. This study provides guidelines for decreasing the TBR for thermal management in the design and implementation of GaN-based semiconductor devices.

Atmospheric-pressure plasma jet sources have proven useful for surface treatments; however, conventional plasma and near-plasma sources have limitations in the number of different plasma gas species that they can handle. We previously developed a damage-free multigas plasma jet source that can generate stable atmospheric-pressure plasma using various gas species without thermal/electrical discharge damage. Herein, we investigate the fundamental characteristics of the generated plasma such as gas temperature (<;57°C) and emission properties. In addition, we evaluate the industrial potential of the jet source by using it with various gas species to induce surface hydrophilization in a polyimide film. The jet source proved useful, and carbon dioxide proved the most effective of the studied gas species for the purpose with the hydrophilized surface maintaining a contact angle of about 30° for over 32 days after plasma irradiation.