The early detection of freeze damage in Navelate oranges (Citrus sinensis L. Osbeck) was studied using electrochemical impedance spectroscopy (EIS), which is associated with a specific double-needle sensor. The objective was to identify this problem early in order to help to determine when a freeze phenomenon occurs. Thus, we selected a set of Navelate oranges without external defects, belonging to the same batch. Next, an intense cold process was simulated to analyze the oranges before and after freezing. The results of the spectroscopy analysis revealed different signals for oranges depending on whether they had experienced freezing or not. Principal Component Analysis (PCA) and Partial Least Squares-Discriminant Analysis (PLS-DA) of the obtained data demonstrated that it is possible to discriminate the samples, explaining 88.5% of the total variability (PCA) and being able to design a mathematical model with a prediction sensitivity of 80% (PLS-DA). Additionally, a designed artificial neural network (ANN) prediction model managed to correctly classify 100% of the studied samples. Therefore, EIS together with ANN-based data treatment is proposed as a viable alternative to the traditional techniques for the early detection of freeze damage in oranges.

Many types of solutions have been studied and developed in order to give the user feedback when using touchpads, buttons, or keyboards in textile industry. Their application on textiles could allow a wide range of applications in the field of medicine, sports or the automotive industry. In this work, we introduce a novel solution that combines a 2D touchpad with an electroluminescent display (ELD). This approach physically has two circuits over a flexible textile substrate using the screen-printing technique for wearable electronics applications. Screen-printing technology is widely used in the textile industry and does not require heavy investments. For the proposed solution, different layer structures are presented, considering several fabric materials and inks, to obtain the best results.

A novel screen-printing fabrication method was used to prepare organic electrochemical transistors (OECTs) based on poly(3,4-ethylenedioxythiophene) doped with polysterene sulfonate (PEDOT:PSS). Initially, three types of these screen-printed OECTs with a different channel and gate areas ratio were compared in terms of output characteristics, transfer characteristics, and current modulation in a phosphate buffered saline (PBS) solution. Results confirm that transistors with a gate electrode larger than the channel exhibit higher modulation. OECTs with this geometry were therefore chosen to investigate their ion-sensitive properties in aqueous solutions of cations of different sizes (sodium and rhodamine B). The effect of the gate electrode was additionally studied by comparing these all-PEDOT:PSS transistors with OECTs with the same geometry but with a non-polarizable metal gate (Ag). The operation of the all-PEDOT:PSS OECTs yields a response that is not dependent on a Na⁺ or rhodamine concentration. The weak modulation of these transistors can be explained assuming that PEDOT:PSS behaves like a supercapacitor. In contrast, the operation of Ag-Gate OECTs yields a response that is dependent on ion concentration due to the redox reaction taking place at the gate electrode with Cl⁻ counter-ions. This indicates that, for cation detection, the response is maximized in OECTs with non-polarizable gate electrodes.

A measuring module has been specifically designed for the electrical characterization of organic semiconductor devices such as organic field effect transistors (OFETs) and organic electrochemical transistors (OECTs) according to the IEEE 1620-2008 standard. This device has been tested with OFETs based on 6,13-bis(triisopropylsilylethinyl)pentacene (TIPS-pentacene). The measuring system has been constructed using a NI-PXIe-1073 chassis with integrated controller and two NI-PXI-4132 programmable high-precision source measure units (SMUs) that offer a four-quadrant ± 100 V output, with resolution down to 10 pA. LabVIEW™ has been used to develop the appropriate program. Most of the main OFET parameters included in the IEEE 1620 standard can be measured by means of this device. Although nowadays expensive devices for the characterization of Si-based transistors are available, devices for the characterization of organic transistors are not yet widespread in the market. Fabrication of a specific and flexible module that can be used to characterize this type of transistors would provide a powerful tool to researchers.