Graphene, MoS₂and silicon-based HIT solar cell with 25.61% output efficiency.

In this paper, we have simulated the structure of n-type MoS₂/silicon heterojunction solar cell and studied its function under different conditions. The optimization of parameters of the cell's layer has been carried out by using AFORS-HET software. In the present study, MoS₂ has been considered as 3-D in nature instead of the reported 2-D nature. In order to ensure the formation of Schottky junction, electric contact has been made along the c-axis to collect the minority charge carriers. After optimizing the various parameters of n-type single layer MoS₂, power efficiency of 12.44% has been achieved at the room temperature, which has further decreased to 9.042% as the layer number has increased up to 40. Furthermore, after optimizing the parameters of silicon wafer maximum efficiency of 16.4% has been achieved. Temperature dependence of the cell performance has also been studied and the maximum efficiency has been achieved at 300 K. In the present study, we have demonstrated that n-type ultrathin layer of MoS₂ can be used as an excellent transparent conducting electrode.

The nano-structured Zinc Oxide (ZnO) has been synthesized by using hydrothermal method and modified via doping of Cobalt (Co), Iron (Fe), a mixture of Co and Fe (Co-Fe) for glucose sensing. The formations of pristine ZnO and doped ZnO have been confirmed by X-Ray diffraction (XRD), which suggests the incorporation of doping elements into the ZnO Matrix. The doped samples show a decrement in photoluminescence intensity in comparison to pristine ZnO, which is an indicative of the formation of competitive pathways for the recombination process. (Co-Fe) doped electrode shows better conductivity than other electrodes, which was later modified with Glucose Oxidase (GOx) for the application of electrochemical sensor. GOx modified (Co-Fe) doped ZnO sensor exhibits enhanced 2-fold sensitivity (32.2 μA mM-1cm-2) in comparison to the pristine ZnO sensors following the linear range of 0-4 mM, response time 6.21 seconds and Kappm value of 0.054 mM. This sensor would be a potential candidate in clinical diagnosis, industry, and food science.