Robert Matos

Dr. Robert Matos

Federal University of Amapá, Macapá, Amapá, Brazil
orcid

Research Focus & Metrics

Academic Career Length

10Years (2017-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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8 January 2020 in Surface Engineering
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Journal Article
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Ștefan ȚăluȘtefan Țălu
Ștefan Țălu
SASenour Abdolghaderi
Senour Abdolghaderi
Erveton Pinheiro PintoErveton Pinheiro Pinto
Erveton Pinheiro Pinto
Robert MatosRobert Matos
Robert Matos
Marco SalernoMarco Salerno
Marco Salerno
We present an advanced image analysis study of the 3D surfaces of silver/diamond-like carbon nanocomposite films prepared by radio-frequency plasma-enhanced chemical vapour deposition. Atomic force microscopy data were analysed, with the goal to provide image analysis tools allowing for a better understanding of the structure–property correlation, with specific case for the present material. While the samples' fractal dimension decreased and the roughness increased with increasing deposition time, fractal succolarity showed no significant difference and relatively high values, describing high percolation, and fractal lacunarity decreased, in agreement with topographic entropy, which revealed uniformity in height distribution. In conclusion, the samples' microtexture shows a nearly uniform surface with a homogenous distribution of nanoparticles, due to the fabrication process and the emerging fractal nature of the nanocomposite, at all the considered deposition times. Fractal lacunarity and succolarity, currently not provided by commercial image analysis programmes, can be useful in advanced surface image characterization.

18 December 2017 in Arabian Journal for Science and Engineering
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Journal Article
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Robert MatosRobert Matos
Robert Matos
GLGerson Anderson de Carvalho Lopes
Gerson Anderson de Carvalho Lopes
Nilson FerreiraNilson Ferreira
Nilson Ferreira
Erveton Pinheiro PintoErveton Pinheiro Pinto
Erveton Pinheiro Pinto
José Carlos Tavares CarvalhoJosé Carlos Tavares Carvalho
José Carlos Tavares Carvalho
RZRobert R. M. Zamora
Robert R. M. Zamora

8 March 2023 in Nanomaterials
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Journal Article
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CSCledson Santos
Cledson Santos
John Matthias Attah-BaahJohn Matthias Attah-Baah
John Matthias Attah-Baah
Romualdo Santos Silva JuniorRomualdo Santos Silva Junior
Romualdo Santos Silva Junior
MMMarcelo A. Macêdo
Marcelo A. Macêdo
MRMarcos V. S. Rezende
Marcos V. S. Rezende
Nilson FerreiraNilson Ferreira
Nilson Ferreira
Herein, we carefully investigated the Fe3+ doping effects on the structure and electron distribution of Cr2O3 nanoparticles using X-ray diffraction analysis (XRD), maximum entropy method (MEM), and density functional theory (DFT) calculations. We showed that increasing the Fe doping induces an enlargement in the axial ratio of c/a, which is associated with an anisotropic expansion of the unit cell. We found that as Fe3+ replaces Cr in the Cr2O3 lattice, it caused a higher interaction between the metal 3d states and the oxygen 2p states, which led to a slight increase in the Cr/Fe–O1 bond length followed by an opposite effect for the Cr/Fe–O2 bonds. Our results also suggest that the excitations characterize a well-localized bandgap region from occupied Cr d to unoccupied Fe d states. The Cr2O3 and Fe-doped Cr2O3 nanoparticles behave as Mott–Hubbard insulators due to their band gap being in the d−d gap, and Cr 3d orbitals dominate the conduction band. These findings suggest that the magnitude and the character of the electronic density near the O atom bonds in Cr2O3 nanoparticles are modulated by the Cr–Cr distances until its stabilization at the induced quasi-equilibrium of the Cr2O3 lattice when the Fe3+ doping values reaches the saturation level range.

10 July 2020 in Microscopy Research and Technique
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Robert MatosRobert Matos
Robert Matos
Erveton Pinheiro PintoErveton Pinheiro Pinto
Erveton Pinheiro Pinto
GRGlenda Quaresma Ramos
Glenda Quaresma Ramos
MAMarta Duarte da Fonseca de Albuquerque
Marta Duarte da Fonseca de Albuquerque
Henrique Duarte da Fonseca FilhoHenrique Duarte da Fonseca Filho
Henrique Duarte da Fonseca Filho

14 February 2024 in Scientific Reports
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AGAtefeh Ghaderi
Atefeh Ghaderi
JSJamshid Sabbaghzadeh
Jamshid Sabbaghzadeh
LDLaya Dejam
Laya Dejam
Ghobad Behzadi pourGhobad Behzadi pour
Ghobad Behzadi pour
EMEmad Moghimi
Emad Moghimi
SSShahram Solaymani
Shahram Solaymani
We investigated the multifaceted gas sensing properties of porous silicon thin films electrodeposited onto (100) oriented P-type silicon wafers substrates. Our investigation delves into morphological, optical properties, and sensing capabilities, aiming to optimize their use as efficient gas sensors. Morphological analysis revealed the development of unique surfaces with distinct characteristics compared to untreated sample, yielding substantially rougher yet flat surfaces, corroborated by Minkowski Functionals analysis. Fractal mathematics exploration emphasized that despite increased roughness, HF/ethanol-treated surfaces exhibit flatter attributes compared to untreated Si sample. Optical approaches established a correlation between increased porosity and elevated localized states and defects, influencing the Urbach energy value. This contributed to a reduction in steepness values, attributed to heightened dislocations and structural disturbances, while the transconductance parameter decreases. Simultaneously, porosity enhances the strength of electron‒phonon interaction. The porous silicon thin films were further tested as effective gas sensors for CO2 and O2 vapors at room temperature, displaying notable changes in electrical resistance with varying concentrations. These findings bring a comprehensive exploration of some important characteristics of porous silicon surfaces and established their potential for advanced industrial applications.

1 September 2021 in Surface and Coatings Technology
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Journal Article
Closed access
ADAbhijeet Das
Abhijeet Das
VCVipin Chawla
Vipin Chawla
Robert MatosRobert Matos
Robert Matos
Henrique Duarte da Fonseca FilhoHenrique Duarte da Fonseca Filho
Henrique Duarte da Fonseca Filho
RYRam Pratap Yadav
Ram Pratap Yadav
SKSanjeev Kumar
Sanjeev Kumar