Tianxiao Nie

Dr. Tianxiao Nie

School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China

Research Focus & Metrics

Academic Career Length

14Years (2013-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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21 July 2017 in Science
Verified
Journal Article
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QHQing Lin He
Qing Lin He
LPLei Pan
Lei Pan
ASAlexander L. Stern
Alexander L. Stern
EBEdward C. Burks
Edward C. Burks
XCXiaoyu Che
Xiaoyu Che
KWKang Wang
Kang Wang
A propagating Majorana mode: Although Majorana fermions remain elusive as elementary particles, their solid-state analogs have been observed in hybrid semiconductor-superconductor nanowires. In a nanowire setting, the Majorana states are localized at the ends of the wire. He et al. built a two-dimensional heterostructure in which a one-dimensional Majorana mode is predicted to run along the sample edge (see the Perspective by Pribiag). The heterostructure consisted of a quantum anomalous Hall insulator (QAHI) bar contacted by a superconductor. The authors used an external magnetic field as a “knob” to tune into a regime where a Majorana mode was propagating along the edge of the QAHI bar covered by the superconductor. A signature of this propagation—half-quantized conductance—was then observed in transport experiments. Science , this issue p. 294 ; see also p. 252

20 July 2020 in ACS Nano
Verified
Journal Article
Closed access
HWHaiyu Wang
Haiyu Wang
YLYingjie Liu
Yingjie Liu
PWPeichen Wu
Peichen Wu
WHWenjie Hou
Wenjie Hou
YJYuhao Jiang
Yuhao Jiang
KWKang L. Wang
Kang L. Wang

24 August 2023 in Nature Communications
Verified
Journal Article
Open access
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HWHaiyu Wang
Haiyu Wang
HWHao Wu
Hao Wu
JZJie Zhang
Jie Zhang
YLYingjie Liu
Yingjie Liu
DCDongdong Chen
Dongdong Chen
WZWeisheng ZHAO
Weisheng ZHAO
Two-dimensional (2D) ferromagnetic materials with unique magnetic properties have great potential for next-generation spintronic devices with high flexibility, easy controllability, and high heretointegrability. However, realizing magnetic switching with low power consumption at room temperature is challenging. Here, we demonstrate the room-temperature spin-orbit torque (SOT) driven magnetization switching in an all-van der Waals (vdW) heterostructure using an optimized epitaxial growth approach. The topological insulator Bi2Te3 not only raises the Curie temperature of Fe3GeTe2 (FGT) through interfacial exchange coupling but also works as a spin current source allowing the FGT to switch at a low current density of ~2.2×106 A/cm2. The SOT efficiency is ~2.69, measured at room temperature. The temperature and thickness-dependent SOT efficiency prove that the larger SOT in our system mainly originates from the nontrivial topological origin of the heterostructure. Our experiments enable an all-vdW SOT structure and provides a solid foundation for the implementation of room-temperature all-vdW spintronic devices in the future.

26 July 2019 in Advanced Optical Materials
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Journal Article
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DKDeyin Kong
Deyin Kong
XWXiaojun Wu
Xiaojun Wu
BWBo Wang
Bo Wang
TNTianxiao Nie
Tianxiao Nie
MXMeng Xiao
Meng Xiao
LWLi Wang
Li Wang

29 April 2023 in Nature Communications
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HWHangtian Wang
Hangtian Wang
HLHaichang Lu
Haichang Lu
ZGZongxia Guo
Zongxia Guo
ALAng Li
Ang Li
PWPeichen Wu
Peichen Wu
TNTianxiao Nie
Tianxiao Nie
Despite recent advances in exfoliated vdW ferromagnets, the widespread application of 2D magnetism requires a Curie temperature (Tc) above room temperature as well as a stable and controllable magnetic anisotropy. Here we demonstrate a large-scale iron-based vdW material Fe4GeTe2 with the Tc reaching ~530 K. We confirmed the high-temperature ferromagnetism by multiple characterizations. Theoretical calculations suggested that the interface-induced right shift of the localized states for unpaired Fe d electrons is the reason for the enhanced Tc, which was confirmed by ultraviolet photoelectron spectroscopy. Moreover, by precisely tailoring Fe concentration we achieved arbitrary control of magnetic anisotropy between out-of-plane and in-plane without inducing any phase disorders. Our finding sheds light on the high potential of Fe4GeTe2 in spintronics, which may open opportunities for room-temperature application of all-vdW spintronic devices.

23 November 2021 in Advanced Materials
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Journal Article
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XCXinhou Chen
Xinhou Chen
HWHangtian Wang
Hangtian Wang
HLHaijiang Liu
Haijiang Liu
CWChun Wang
Chun Wang
GWGaoshuai Wei
Gaoshuai Wei
XWXiaojun Wu
Xiaojun Wu