Mihai Adrian Sanduleanu

Dr. Mihai Adrian Sanduleanu

Department of Electrical Engineering and Computer Science, Khalifa University, Abu Dhabi, United Arab Emirates
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Academic Career Length

29Years (1998-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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6 March 2020 in Sensors
Verified
Journal Article
Open access
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MKMamady Kebe
Mamady Kebe
RGRida Gadhafi
Rida Gadhafi
BMBaker Mohammad
Baker Mohammad
MSMihai Adrian Sanduleanu
Mihai Adrian Sanduleanu
HSHani Saleh
Hani Saleh
MAMahmoud Al-Qutayri
Mahmoud Al-Qutayri
Continuous monitoring of vital signs, such as respiration and heartbeat, plays a crucial role in early detection and even prediction of conditions that may affect the wellbeing of the patient. Sensing vital signs can be categorized into: contact-based techniques and contactless based techniques. Conventional clinical methods of detecting these vital signs require the use of contact sensors, which may not be practical for long duration monitoring and less convenient for repeatable measurements. On the other hand, wireless vital signs detection using radars has the distinct advantage of not requiring the attachment of electrodes to the subject’s body and hence not constraining the movement of the person and eliminating the possibility of skin irritation. In addition, it removes the need for wires and limitation of access to patients, especially for children and the elderly. This paper presents a thorough review on the traditional methods of monitoring cardio-pulmonary rates as well as the potential of replacing these systems with radar-based techniques. The paper also highlights the challenges that radar-based vital signs monitoring methods need to overcome to gain acceptance in the healthcare field. A proof-of-concept of a radar-based vital sign detection system is presented together with promising measurement results.
1 June 2013
Verified
Conference Paper
Closed access
AVAlberto Valdes-Garcia
Alberto Valdes-Garcia
ANArun Natarajan
Arun Natarajan
DLDuixian Liu
Duixian Liu
MSMihai Adrian Sanduleanu
Mihai Adrian Sanduleanu
XGXiaoxiong Gu
Xiaoxiong Gu
SRScott Reynolds
Scott Reynolds
This paper presents a multi-function, dual-polarization phased array transceiver supporting both radar and communication applications at W-band. 32 receive elements and 16 transmit elements with dual outputs are integrated to support 16 dual polarized antennas in a package. The IC further includes two independent 16:1 combining networks, two receiver downconversion chains, an up-conversion chain, a 40GHz PLL, an 80GHz frequency doubler, extensive digital control circuitry, and on-chip IF/LO combining/distribution circuitry to enable scalability to arrays at the board level. The fully-integrated transceiver is fabricated in the IBM SiGe BiCMOS 0.13um process, occupies an area of 6.6×6.7mm 2 , and operates from 2.7V (analog/RF) and 1.5V (digital) supplies. Multiple operating modes are supported including the simultaneous reception of two polarizations with a 10GHz IF output, transmission in either polarization from an IF input, or single-polarization transmission/reception from/to I&Q base-band signals (2.5W RX, 2.9W TX). Measurement results show 8dB receiver NF and 2dBm transmitter output power per element at 94GHz in both polarizations.
23 October 2019 in IEEE Journal of Solid-State Circuits
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Journal Article
Closed access
BSBodhisatwa Sadhu
Bodhisatwa Sadhu
CBChristian W. Baks
Christian W. Baks
DLDuixian Liu
Duixian Liu
DFDaniel Friedman
Daniel Friedman
AVAlberto Valdes-Garcia
Alberto Valdes-Garcia
XGXiaoxiong Gu
Xiaoxiong Gu
24 June 2008 in IEEE Journal of Solid-State Circuits
Verified
Journal Article
Closed access
YJYanyu Jin
Yanyu Jin
MSMihai Adrian Sanduleanu
Mihai Adrian Sanduleanu
JLJohn R. Long
John R. Long
A millimeter-wave power amplifier fabricated in 90 nm bulk CMOS technology consists of 3 identical cascode stages and on-chip matching networks (inter-stage, input, and output) implemented with wide-gap coplanar waveguides and M6-M5 (MIM) capacitors. The amplifier realizes a linear power gain of 19.7 dB at 52.4 GHz and 10.3 dB at 60 GHz. Maximum saturated output power and output-referred compression point are and 3.1 dBm, respectively. Peak PAE is 4.2%. The 1.180.96 die consumes 75 mA when operating from a 2 V supply.
7 September 1998
Verified
Conference Paper
Closed access
MSMihai Adrian Sanduleanu
Mihai Adrian Sanduleanu
ATA.J.M. Van Tuijl
A.J.M. Van Tuijl
RWR.F. Wassenaar
R.F. Wassenaar
MLM.C. Lammers
M.C. Lammers
HWH. Wallinga
H. Wallinga
This paper describes the principle and the design of a CMOS low noise, low residual offset, chopped amplifier with a class AB output stage for noise and offset reduction in mixed analog digital applications. The operation is based on chopping and dynamic element matching to reduce noise and offset, without excessive increase of the charge injection residual offset. The main goal is to achieve low residual offsets by chopping at high frequencies reducing at the same time the 1/f noise of the amplifier. Measurements on a 0.8 μm CMOS realization show reduction of 1/f noise and 18nV/√Hz residual thermal noise at low frequencies. The residual offset is lower than 100 μV up to 8 MHz chopping frequency. Driving a 32 Ω load the linearity is better than -80 dB and better than -88 dB for a 1 kΩ load at 1 kHz
16 July 2014 in IEEE Transactions on Circuits and Systems I: Regular Papers
Verified
Journal Article
Closed access
SSShupeng Sun
Shupeng Sun
FWFa Wang
Fa Wang
SYSoner Yaldiz
Soner Yaldiz
XLXin Li
Xin Li
LPLawrence Pileggi
Lawrence Pileggi
DFDaniel Friedman
Daniel Friedman
The advent of the nanoscale integrated circuit (IC) technology makes high performance analog and RF circuits increasingly susceptible to large-scale process variations. On-chip self-healing has been proposed as a promising remedy to address the variability issue. The key idea of on-chip self-healing is to adaptively adjust a set of on-chip tuning knobs (e.g., bias voltage) in order to satisfy all performance specifications. One major challenge with on-chip self-healing is to efficiently implement on-chip sensors to accurately measure various analog and RF performance metrics. In this paper, we propose a novel indirect performance sensing technique to facilitate inexpensive-yet-accurate on-chip performance measurement. Towards this goal, several advanced statistical algorithms (i.e., sparse regression and Bayesian inference) are adopted from the statistics community. A 25 GHz differential Colpitts voltage-controlled oscillator (VCO) designed in a 32 nm CMOS SOI process is used to validate the proposed indirect performance sensing and self-healing methodology. Our silicon measurement results demonstrate that the parametric yield of the VCO is significantly improved for a wafer after the proposed self-healing is applied.