Owing to their high integration and functionality, nanometer-scale optoelectronic devices based on III-V semiconductor materials are emerging as an enabling technology for fiber-optic communication applications. Semiconductor quantum dots (QDs) with the three-dimensional carrier confinement offer potential advantages to such optoelectronic devices in terms of high modulation bandwidth, low threshold current density, temperature insensitivity, reduced saturation fluence, and wavelength flexibility. In this paper, we review the development of the molecular beam epitaxial (MBE) growth methods, material properties, and device characteristics of semiconductor QDs. Two kinds of III-V QD-based lasers for optical communication are summarized: one is the active electrical pumped lasers, such as the Fabry–Perot lasers, the distributed feedback lasers, and the vertical cavity surface emitting lasers, and the other is the passive lasers and the instance of the semiconductor saturable absorber mirrors mode-locked lasers. By analyzing the pros and cons of the different QD lasers by their structures, mechanisms, and performance, the challenges that arise when using these devices for the applications of fiber-optic communication have been presented.

Semiconductor superluminescent light-emitting diodes (SLEDs) have emerged as ideal and vital broadband light sources with extensive applications, such as optical fiber-based sensors, biomedical sensing/imaging, wavelength-division multiplexing system testing and optoelectronic systems, etc. Self-assembled quantum dots (SAQDs) are very promising candidates for the realization of broadband SLED due to their intrinsic large inhomogeneous spectral broadening. Introducing excited states (ESs) emission could further increase the spectral bandwidth. However, almost all QD-based SLEDs are limited to the ground state (GS) or GS and first excited state (ES₁) emission. In this work, multiple five-QD-layer structures with large dot size inhomogeneous distribution were grown by optimizing the molecular beam epitaxy (MBE) growth conditions. Based on that, with the assistance of a carefully designed mirror-coating process to accurately control the cavity mirror loss of GS and ESs, respectively, a broadband QD-SLED with three simultaneous states of GS, ES₁ and second excited-state (ES₂) emission has been realized, exhibiting a large spectral width of 91 nm with a small spectral dip of 1.3 dB and a high continuous wave (CW) output power of 40 mW. These results pave the way for a new fabrication technique for high-performance QD-based low-coherent light sources.