Molecular beam epitaxy technology has a significant advantage in semiconductor technology due to its strong controllability, especially for the preparation of materials such as quantum wires and quantum dots

Semiconductor superluminescent light-emitting diodes (SLEDs) have emerged as ideal and vital broadband light sources with extensive applications, such as optical fiber-based sensors, biomedical sensing/imaging, wavelength-division multiplexing system testing and optoelectronic systems, etc. Self-assembled quantum dots (SAQDs) are very promising candidates for the realization of broadband SLED due to their intrinsic large inhomogeneous spectral broadening. Introducing excited states (ESs) emission could further increase the spectral bandwidth. However, almost all QD-based SLEDs are limited to the ground state (GS) or GS and first excited state (ES₁) emission. In this work, multiple five-QD-layer structures with large dot size inhomogeneous distribution were grown by optimizing the molecular beam epitaxy (MBE) growth conditions. Based on that, with the assistance of a carefully designed mirror-coating process to accurately control the cavity mirror loss of GS and ESs, respectively, a broadband QD-SLED with three simultaneous states of GS, ES₁ and second excited-state (ES₂) emission has been realized, exhibiting a large spectral width of 91 nm with a small spectral dip of 1.3 dB and a high continuous wave (CW) output power of 40 mW. These results pave the way for a new fabrication technique for high-performance QD-based low-coherent light sources.

Owing to its broadband absorption, ultrafast recovery time, and excellent saturable absorption feature, graphene has been recognized as one of the best candidates as a high-performance saturable absorber (SA). However, the low absorption efficiency and reduced modulation depth severely limit the application of graphene-based SA in ultrafast fiber lasers. In this paper, a single-layer graphene saturable absorber mirror (SG-SAM) was coated by a quarter-wave SiO₂ passivated layer, and a significantly enhanced modulation depth and reduced saturation intensity were obtained simultaneously compared to the SG-SAM without the SiO₂ coating layer. In addition, long-term operational stability was found in the device due to the excellent isolation and protection of the graphene absorption layer from the external environment by the SiO₂ layer. The high performance of the SAM was further confirmed by the construction of a ring-cavity EDF laser generating mode-locked pulses with a central wavelength of 1563.7 nm, a repetition rate of 34.17 MHz, and a pulse width of 830 fs.

Plasmons in graphene (Gr) show many fascinating characteristics, such as dynamic tunability, strong field confinement of light-matter interaction, and highly responsive, which has been widely exploited for a number of applications, including photodetectors, optical modulators, and sensors. In this paper, graphene plasmons (GPs) were motivated by implanting Au nanoparticles (Au NPs) into Ta2O5 thin layers adjacent to the Gr film, and the strong localized surface plasmon resonance (LSPR) effect has been proposed and demonstrated by placing the GPs structure on a III–V semiconductor quantum well saturable absorber (SA). It has been substantiated that the heightened interaction between light and Gr via LSPR predominantly occurs through the mechanisms of resonant energy transfer and local electromagnetic field enhancement, rather than direct electron transfer. Significant improvement on the nonlinear characteristics of the GPs modulated III–V semiconductor SA has been observed with a 17.1% large modulation depth and obviously improved working stability. A 1550 nm passive mode-locked laser has been successfully constructed with a pulse width down to 523 fs by integrating the SA into the laser cavity. This work lays the foundation for the development of high-performance mode-locked lasers and also demonstrates the substantial enhancement of nonlinear optical properties of various materials not limited to III–V semiconductors provided by this GPs' modulated structure; hence, these findings offer extensive prospects for applications in various photonics and optoelectronic devices.

Ultrafast fiber lasers have shown exceptional performance across various domains, including material processing, medical applications, and optoelectronic communication. The semiconductor saturable absorber mirror (SESAM) is a key enabler of ultrafast laser operation. However, the narrow wavelength range and limited modulation depth of conventional SESAMs pose challenges to further advancing ultrafast fiber laser technology. To address these limitations, we explored the integration of guided mode resonance (GMR) effects to enhance light–matter interaction within the absorption layer. By incorporating subwavelength dielectric film gratings onto the cap layer of SESAMs, we excited GMR and formed a microcavity structure in conjunction with the distributed Bragg mirror (DBR). This design significantly improved the absorption efficiency of InAs quantum dots. The experimental results demonstrate that the modulation depth of the SESAM increased from 6.7% to 17.3%, while the pulse width was reduced by 2.41 times. These improvements facilitated the realization of a high-quality, stable ultrafast fiber laser. This study not only broadens the application potential of ultrafast lasers in diverse fields but also offers a practical pathway for advancing SESAM technology toward industrial-scale deployment.

The Au ion implantation process has emerged as an effective and simple method to be utilized for the fabrication of opto-electronic materials and devices due to numerous fascinating features of Au nanoparticles such as surface plasmon resonance (SPR), large third-order nonlinearity and a fast response time. In this paper, we describe the fabrication of a novel Au nanoparticle saturable absorber (Au NP-SA) by embedding the Au NPs into a SiO₂ thin film using the ion implantation process, which shows excellent saturable absorption features due to the localized surface plasmon resonance (LSPR) effect of Au NPs. A stable and high-quality pulsed laser with a repetition rate of 33.3 kHz and a single pulse energy of 11.7 nJ was successfully constructed with the Au NP-SA. Both the stable operation characteristic of the obtained Q-switched pulsed laser and the high repeatability of the fabrication process of the Au NP-SA were demonstrated. In addition, the simple feasibility and maturity of the ion implantation process allow for the plasmonic nanoparticles to be easily integrated into other types of opto-electronic materials and devices to further improve their performance, and shows immense potential for the production of wafer-level products.