Laccase, as a copper-containing polyphenol oxidase, primarily functions in the process of lignin, anthocyanin biosynthesis, and various abiotic/biotic stresses. In this study, forty-eight laccase members were identified in the eggplant genome. Only forty-two laccase genes from eggplant (SmLACs) were anchored unevenly in 12 chromosomes, the other six SmLACs were mapped on unanchored scaffolds. Phylogenetic analysis indicated that only twenty-five SmLACs were divided into six different groups on the basis of groups reported in Arabidopsis. Gene structure analysis revealed that the number of exons ranged from one to 13. Motif analysis revealed that SmLACs included six conserved motifs. In aspects of gene duplication analysis, twenty-one SmLACs were collinear with LAC genes from Arabidopsis, tomato or rice. Cis-regulatory elements analysis indicated many SmLACs may be involved in eggplant morphogenesis, flavonoid biosynthesis, diverse stresses and growth/development processes. Expression analysis further confirmed that a few SmLACs may function in vegetative and reproductive organs at different developmental stages and also in response to one or multiple stresses. This study would help to further understand and enrich the physiological function of the SmLAC gene family in eggplant, and may provide high-quality genetic resources for eggplant genetics and breeding.

AlGaN/GaN high electron mobility transistors (HEMTs) are regarded as promising candidates for a 5G communication system, which demands higher frequency and power. Source/drain ohmic contact is one of the key fabrication processes crucial to the device performance. Firstly, Au-contained metal stacks combined with RTA high-temperature ohmic contact schemes were presented and analyzed, including process conditions and contact formation mechanisms. Considering the issues with the Au-contained technique, the overview of a sequence of Au-free schemes is given and comprehensively discussed. In addition, in order to solve various problems caused by high-temperature conditions, novel annealing techniques including microwave annealing (MWA) and laser annealing (LA) were proposed to form Au-free low-temperature ohmic contact to AlGaN/GaN HEMT. The effects of the annealing method on surface morphology, gate leakage, dynamic on-resistance (R_ON), and other device characteristics are investigated and presented in this paper. By using a low-temperature annealing atmosphere or selective annealing method, gate-first Si-CMOS compatible AlGaN/GaN HEMT technology can be realized for high frequency and power application.

Aiming at recognizing small-scale and complex traffic signs in the driving environment, a traffic sign detection algorithm YOLO-FAM based on YOLOv5 is proposed. Firstly, a new backbone network, ShuffleNet-v2, is used to reduce the algorithm’s parameters, realize lightweight detection, and improve detection speed. Secondly, the Bidirectional Feature Pyramid Network (BiFPN) structure is introduced to capture multi-scale context information, so as to obtain more feature information and improve detection accuracy. Finally, location information is added to the channel attention using the Coordinated Attention (CA) mechanism, thus enhancing the feature expression. The experimental results show that compared with YOLOv5, the mAP value of this method increased by 2.27%. Our approach can be effectively applied to recognizing traffic signs in complex scenes. At road intersections, traffic planners can better plan traffic and avoid traffic jams.

β-Ga₂O₃, with excellent bandgap, breakdown field, and thermal stability properties, is considered to be one of the most promising candidates for power devices including field-effect transistors (FETs) and for other applications such as Schottky barrier diodes (SBDs) and solar-blind ultraviolet photodetectors. Ohmic contact is one of the key steps in the β-Ga₂O₃ device fabrication process for power applications. Ohmic contact techniques have been developed in recent years, and they are summarized in this review. First, the basic theory of metal–semiconductor contact is introduced. After that, the representative literature related to Ohmic contact with β-Ga₂O₃ is summarized and analyzed, including the electrical properties, interface microstructure, Ohmic contact formation mechanism, and contact reliability. In addition, the promising alternative schemes, including novel annealing techniques and Au-free contact materials, which are compatible with the CMOS process, are discussed. This review will help our theoretical understanding of Ohmic contact in β-Ga₂O₃ devices as well as the development trends of Ohmic contact schemes.

Chiral metal halide perovskites (MHPs) have emerged for the excellent integration of spin states of freedom with optoelectronic properties. The chiral-induced spin selectivity (CISS) effect enables chiral MHPs great potential to spin-dependent optoelectronic applications. In this review, we briefly summarize the construction principles and recent discoveries on the CISS effect of chiral MHPs. Then, the room temperature spin light-emitting diodes (spin-LEDs) based on the CISS effect of chiral MHPs are discussed. In the end, challenges and opportunities related to spin-LEDs based on chiral MHPs are proposed.