We have designed and synthesised two new carbazole based self-assembled molecules as hole-selective layers (HSLs) in p–i–n perovskite solar cells achieving high efficiency and high stability.

Good selective contacts are necessary for solar cells that are efficient and have long-term stability. Since 1998, with the advent of solid-state dye sensitized solar cells (DSSC), Spiro-OMeTAD has become the reference hole-transporting material. Yet, for efficient solar cells Spiro-OMeTAD must be partially oxidized with chemical dopants, which compromises the long-term stability of the solar cell. Alternatively, semiconductor polymers such as PTAA have been also studied, matching or improving the solar cell characteristics. However, PTAA-based devices lack long-term stability. Moreover, both Spiro-OMeTAD and PTAA are expensive materials to synthesize. Hence, approaches toward increasing the solar cell stability without compromising the device efficiency and decreasing the manufacturing cost are very desirable. In this work we have modified Spiro-OMeTAD, by an easy-to-use methodology, by introducing a carboxylic acid anchoring group (Spiro-Acid), thereby allowing the formation of self-assembled monolayers (SAMs) of the hole-transporting material in dopant-free p-i-n hybrid perovskite solar cells (iPSCs). The resulting device showed a champion efficiency of 18.15% with ultralow energy loss, which is the highest efficiency among Spiro-OMeTAD-based iPSCs, and a remarkable fill factor of over 82%, as well as excellent long-term illumination stability. Charge transfer and charge carrier dynamics are studied by using advanced transient techniques to understand the interfacial kinetics. Our results demonstrate that the Spiro-OMeTAD-based SAMs have a great potential in producing low-cost iPSC devices, due to lower material usage, good long-term stability, and high performance.

Finding an effective approach to suppress trap formation is a potential route for enhancing the performance of nonfullerene organic photovoltaic (NF‐OPVs) devices. Here, an extraordinary short‐circuit current density (J_SC) value of 32.65 mA cm^‐2 is achieved, higher than the state‐of‐the art NF‐OPVs reported, reaching a high power conversion efficiency (PCE) of 17.92%. This remarkable enhancement is exhibited through the fine‐tuning of PEDOT:PSS/PM6:Y7 films and interface morphologies via applying the prethermal treatment approach (Pre‐TT) to the devices, which exhibit J_SC and PCE enhancement of 21% and 8%, respectively, compared to the pristine devices. Accordingly, the dependence of the J_SC upon the Pre‐TT approach through a range of morphological, optical, electrical, and advanced transient measurements is investigated. The Pre‐TT‐based films are found to possess optimal smooth blend morphology with better dispersity owing to reduced domain size. Moreover, the measurements show that the optimized treated devices present higher exciton dissociation probabilities and generation rate of the free charge carriers, showing an ideal balanced electron/hole mobility that reveals the J_SC and PCE enhancement. Hence, Pre‐TT approach provides a facile passivation strategy that reduces the trap state density of the blend film, improves interface charge transfer, allows balanced electron/hole mobility, and thus promotes device performance.