Silicon carbide (SiC) devices have shown definite advantages over Si counterparts in high-temperature, high-voltage, and high-frequency applications. To fully exploit the potentiality of SiC devices in high temperatures, die-attach materials that can withstand high temperatures for a long time are required in the power electronics packaging. In this article, the high-temperature die-attach materials, such as high-temperature solders and transient liquid-phase bonding materials, were reviewed first. Then, metallic (mainly Ag and Cu) nanoparticles (NPs) sintering technologies were thoroughly overviewed. The metallic NPs sintering materials, metallic NPs sintering process, and interface and reliability were analyzed, respectively. Finally, the challenges and outlook of promising Cu NPs sintering technology were discussed.

This paper focuses on characterizing the evolution of warpage, effects of epoxy molding compound (EMC), and effects of carrier 2 (the second carrier in the process) of 12 inch RDL-first multi-die fan-out wafer-level packaging (FOWLP) during the manufacturing process. The linear viscoelasticity properties of EMC and polyimide (PI) were characterized using dynamic mechanical analysis (DMA) in the frequency domain at different temperatures., The elastic and viscoelastic model were used for PI and EMC, the finite element analyses (FEA) of the cured structure were carried out and the results were compared with the test results. The viscoelastic properties of the EMC in the FEA could predict the wafer warpage more accurately. The FEA and experiments were used to investigate the evolution of warpage. The molding had a great influence on the warpage. The effects of the EMC and carrier 2 were also investigated with FEA. The wafer warpage could be reduced by lowering the thickness of the EMC, increasing the thickness of carrier 2, and selecting EMC and carrier 2 with a matched coefficient of thermal expansion (CTE).

In the current 4G Long Term Evolution and the incoming 5G mobile communication technology, as the number of radio frequency (RF) devices in the RF front-end module is increasing fast, miniaturization is essential and significant. The 3-D RF system-in-package (SiP) technology is an excellent miniaturization solution. In this paper, a 700-2900-MHz 3-D stacked RF module with the size of 23 mm × 23 mm × 3.3 mm has been designed and implemented, which is used for a micro base station. It is more compact than other reported 3-D RF SiP products used for micro base stations. The 3-D RF module integrates four bare dies, one quad flat no-lead packaged chip, and more than 200 passive devices. Considering the electromagnetic isolation requirement, mechanical performance, and effective interconnection, the detailed structure design is presented in this paper. Simulations are performed for the electrical characterization and the thermal performance evaluation of the stacked module. The simulation results show that the insertion loss (S21) and return loss (S11) of the RF signal transmission lines are controlled below 0.42 dB and over 15 dB within 3 GHz, respectively. The electromagnetic isolation between different RF and/or intermediate frequency signal transmission lines is no less than 65 dB within 3 GHz. In thermal management simulation, the highest junction temperature of the chips in the 3-D structure is below 94 °C at the severe condition (50 °C ambient temperature and nature air convection). Finally, the assembly flow is presented, and the test results indicate the good electrical performance of the 3-D RF module.

Two ultrafine-grained W-Cu alloys and two coarse-grained W-Cu alloys were prepared to study the effect of tungsten grain refinement on the interface characteristics between coating and W-Cu alloys. The experimental results show that in the coarse-grained W-Cu alloys, the tungsten phase near the surface is easy to form pits and cracks during impact loading, while the fine-grained tungsten alloy is not prone to this phenomenon. Simulations show that refining tungsten grains can not only reduce the impact absorption energy, but also increase the contact area of tungsten and copper phases, thereby reducing the fracture probability of tungsten phases and improving the dynamic mechanical properties of the W-Cu alloys under impact loading. The tested results show that the shear strength of gold studs on the coating is increased by about 33%, after grain refinement for the W-Cu alloys.

This paper presents a broadband dual-polarization Antenna-in-Package (AiP) design for 5G millimeter-wave user equipment. The magneto-electric (ME) antenna is adopted to achieve dual-polarization and broadband. We introduce a tapered feeding probe to enhance the antenna’s dual-polarization isolation and optimize the impedance matching between the feeding network and the radiating patch to achieve high gain throughout the entire operating bandwidth. Based on the antenna element, we design a 1×4 antenna array with dimensions of 20×5×1.1 mm ³ . The impedance bandwidth of both polarizations of the array fall within 26.8 - 42.7 GHz, covering the majority of the 5G New Radio (NR) bands. The gain range for horizontal polarization within this band is 9.87-12.5 dBi, while that for vertical polarization is 10.67-12.51 dBi. The antenna array can achieve beam scanning angles of 50° and 30° in the FR2 n257 and n260 frequency bands, respectively. The AiP is manufactured and tested using the Flip-Chip Ball Grid Array (FCBGA) process on an organic substrate, with the test results closely aligning with simulation outcomes. The proposed AiP covers 5G millimeter wave n257, n259, n260, and n261 bands and a significant portion of n258 (24.25 GHz - 27.5 GHz) while guaranteeing high dual-polarization isolation and considerable gain, thus making it suitable for application in 5G millimeter-wave user equipment.

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