The electrochemical corrosion of Ti surfaces is significantly affected by O adsorption, yet the underlying mechanisms remain unexplored. Herein, density functional theory calculations are employed to examine the adsorption energies, structural properties, electronic structures, and thermodynamic stability of atomic O on Ti(0001) surfaces during initial oxidation. Additionally, the impact of O adsorption on Ti dissolution is assessed by introducing a Ti vacancy on the Ti(0001) surface. The passivation of the Ti(0001) surface is predominantly ascribed to the robust adsorption of O atoms. The thermodynamic results reveal that bulk TiO₂ easily forms at 300 K, which explains the spontaneous passivation of the Ti(0001) surface. The formation of an O monolayer on the Ti(0001) surface increases the work function (Φ), positively shifting the equilibrium potential and reducing the corrosion rate. The surface vacancy formation energy of Ti on the Ti(0001)/O surface surpasses that on the clean surface. The electrode potential shift for a Ti atom dissolving from the Ti(0001)/O surface is positive, indicating that oxidation impedes the formation of Ti vacancies, rendering Ti atoms less soluble. This study enhances our comprehension of the corrosion mechanism in Ti metal.

Titanium-copper (Ti–Cu) coatings have attracted extensive attention in the surface modification of industrial and biomedical materials due to their excellent physical and chemical properties and biocompatibility. Here, Ti–Cu coatings are fabricated using a combination of high-power pulsed magnetron sputtering (HPPMS; also known as high power impulse magnetron sputtering (HiPIMS)) and DC magnetron sputtering followed by vacuum annealing at varied temperatures (300, 400, and 500 °C). X-ray diffraction (XRD), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS) data showed that Ti, Cu, and CuTi₃ are mainly formed in the coatings before annealing, while Ti₃O, Cu₂O, and CuTi₃ are the main compounds present in the annealed coatings. The cross-sectional TEM micrographs and corresponding EDS results provided evidence that Ti is mainly present on the surface and interfaces of the silicon substrate and the Ti–Cu coatings annealed at 500 °C, while the bulk of the coatings is enriched with Cu. The resistivity of the coatings decreased with increasing the annealing temperature from 300 to 500 °C. Based on self-corrosion current density data, the Ti–Cu coating annealed at 300 °C showed similar corrosion performance compared to the as-deposited Ti–Cu coating, while the corrosion rate increased for the Ti–Cu coatings annealed at 400 and 500 °C. Stable release of copper ions in PBS (cumulative released concentration of 0.8–1.0 μM) for up to 30 days was achieved for all the annealed coatings. Altogether, the results demonstrate that vacuum annealing is a simple and viable approach to tune the Cu diffusion and microstructure of the Ti–Cu coatings, thereby modulating their electrical resistivity, corrosion performance, and Cu ion release behavior.

DFT calculations of the selective corrosion of NiTi alloy indicate that oxidation promotes and impedes the dissolution of Ni and Ti, respectively, and the corrosion resistance of NiTi-B ₂ phase should be better than that of NiTi-B19′ phase.

In this study, TiN films doped with different copper contents (TiCuN) were prepared by using direct current magnetron sputtering method. The effects of Cu doping on composition, structure, and mechanical properties of TiN films were studied by energy-dispersive spectroscopy (EDS), X-ray diffraction (XRD), a Vickers microhardnessmeter, and density functional theory (DFT). The results of experimental and DFT study showed that Cu mainly replaced Ti atoms in TiN to form replacement solid solution doping. When Cu replaced Ti in TiN, a weak Cu-N (bond population varied from 0.06 to 0.11) covalent bond formed; meanwhile, the bonding strength of Ti-N (bond population varied from 0.29 to 0.4) bond adjacent to Cu increased. When Cu content was low, a small number of weak Cu-N bonds were formed, with strengthened Ti-N bond near Cu atom, resulting in an increased hardness of Cu doped TiN films. According to the theory of weak bonds, when the Cu content was increased further, the number of weak Cu-N bonds increased and TiCuN hardness decreased. With an increase in Cu content, it was found the toughness of TiCuN also increased. The results of this study will provide a theoretical and experimental guidance for improving the toughness and deformation resistance of TiN, which has a potential application in the surface modification of medical devices.

The wide application of Mg alloys has been restricted because of their poor corrosion and wear resistance. Titanium nitride ceramic films prepared via magnetron sputtering can improve the corrosion and wear resistance of Mg alloys. However, residual stress produced at the interface between the film and the Mg alloy substrate causes the TiN film to spall off and reduces its service life. One potential approach to mitigating residual stress involves enhancing the adhesive strength between the film and the substrate, thereby potentially extending the service life of the film. To increase the adhesion strength between the TiN film and the Mg alloy substrate, a Ti or Al interlayer was deposited on the Mg alloy by magnetron sputtering. Subsequently, the adhesion strengths of TiN/Ti and TiN/Al were determined under a single high shear force by scratch tests and were determined under multiple low shear forces by friction and wear tests. The results of scratch tests show that TiN with the Ti interlayer on the Mg alloy substrate has superior adhesion strength under a single high shear force. And the results of friction and wear tests show that both the TiN/Al and TiN/Ti films provided protection to the Mg alloy substrate against friction and wear, and TiN with the Ti interlayer on the Mg alloy substrate has superior adhesion strength under multiple low shear forces. This work can provide guidance for the selection of interlayers between Mg alloy substrates and hard ceramic films.