Herein, we propose a tunable plasmonic sensor with Fano resonators in an inverted U-shaped resonator. By manipulating the sharp asymmetric Fano resonance peaks, a high-sensitivity refractive index sensor can be realized. Using the multimode interference coupled-mode theory and the finite element method, we numerically simulate the influences of geometrical parameters on the plasmonic sensor. Optimizing the structure parameters, we can achieve a high plasmonic sensor with the maximum sensitivity for 840 nm/RIUand figure of merit for 3.9 × 10⁵. The research results provide a reliable theoretical basis for designing high sensitivity to the next generation plasmonic nanosensor.

Indium tin oxide (ITO) has been studied for applications at normal high temperatures, below 600°C, due to its excellent electrical characteristics. In an attempt to further match the needs of electronics for use in extremely harsh environments, the changes in the conductive properties of ITO films and their mechanism were investigated at special high-temperatures above 1,000°C. ITO films were prepared by pulsed laser deposition (PLD) onto lanthanum gallium silicate (LGS) substrates. Furthermore, the as-deposited samples were annealed with different temperature-time treatments, and we investigated the effects of annealing on the electrical, structure, surface morphology and chemical properties of the ITO films by X-ray diffraction analysis, scanning electron microscopy (SEM), resistance measurements, and X-ray photoelectron spectroscopy (XPS). The experimental results showed that the decreased resistance of the ITO films was mainly attributed to the increase in the crystalline size and the increased amount of Sn⁴⁺ ions during the heating period (0–1,000°C). Generally, the ITO films showed stable electrical properties when they were heated at 1,000°C for at least 2.5 h. As expected, the ITO films that remained steady above 1,000°C have potential applications as electrodes working in special high-temperature environments.

The use of BaTiO₃ (BTO) ferroelectric thin films in flexible ferroelectric memory offers a promising pathway for next-generation nonvolatile memory applications, given BTO’s excellent ferroelectric properties, stability, high dielectric constant, and strong fatigue resistance. However, the fabrication of BTO on flexible substrates presents a significant technical challenge. In this study, we achieved high-quality, single-crystalline (111)-oriented BTO films on mica substrates through the design of buffer layers. The BTO films exhibit strong polarization properties (remnant polarization, 2P_r ∼15.63 μC/cm², and saturation polarization, 2P_s ∼36.61 μC/cm²), and the flexible BTO devices maintained exceptional stability under bending radii of 3.5 and 6 mm. After 10⁷ bipolar switching cycles, polarization showed only minor changes, with a retention time exceeding 10⁴ s. We further explored the application of flexible BTO ferroelectric memory in neuromorphic computing. The flexible BTO-based memory demonstrated adjustable synaptic behavior, effectively modulating EPSC (excitatory postsynaptic current) responses through pulse amplitude and width to simulate short-term memory. PPF (paired pulse facilitation) and LTP (long-term potentiation) behaviors verified its synaptic weight modulation capabilities, achieving 91.6% accuracy in neural network-based handwritten digit recognition after 10³ training cycles. These findings underscore the potential of flexible BTO ferroelectric memory for memory devices and neuromorphic computing, offering promising applications for wearable AI systems.

In order to develop film electrodes for the surface acoustic wave (SAW) devices operating in harsh high-temperature environments, novel Al₂O₃/Pt/ZnO/Al₂O₃ multilayered film electrodes were prepared by laser molecular beam epitaxy (LMBE) at 150 °C. The first Al₂O₃ layer was used as a barrier layer to prevent the diffusion of Ga, La, and Si atoms from the La₃Ga₅SiO₁₄ (LGS) substrate to the film electrode and thus improved the crystalline quality of ZnO and Pt films. It was found that the resistance of the Al₂O₃/Pt/ZnO/Al₂O₃ electrode did not vary up to a temperature of 1150 °C, suggesting a high reliability of electrode under harsh high-temperature environments. The mechanism of the stable resistance of the Al₂O₃/Pt/ZnO/Al₂O₃ film electrodes at high temperature was investigated by analyzing its microstructure. The proposed Al₂O₃/Pt/ZnO/Al₂O₃ film electrode has great potential for application in high-temperature SAW devices.

In this paper, we propose a multi-channel photonic crystal fiber sensor, which adopts dual-polarization and multiple materials to effectively reduce the mutual interference between channels and enhance the surface plasmon resonance, thus achieving simultaneous detection of a multi-channel with low interference. Four channels are polished around the cylindrical fiber, and then different metal films (gold or silver) and plasmonic materials (titanium dioxide, thallium pentoxide, or graphene) are added to the sensing area of each channel. All channels detect refractive indices in the range of 1.34 to 1.42. The sensing performance of the fiber optic sensor was numerically investigated using the full vector finite element method. After the optimization of structural parameters, the maximum wavelength sensitivity of channel-1, channel-2, channel-3, and channel-4 are 49,800 nm/RIU, 49,000 nm/RIU, 35,900 nm/RIU, and 36,800 nm/RIU, respectively. We have theoretically analyzed the sensor’s capabilities for partial bio-detection and simulated its detection capability with a wavelength sensitivity of 11,500 nm/RIU for normal red blood cells and 12,200 nm/RIU for MCF-7 cancerous cells. Our proposed sensor has a novel design, can detect multiple channels simultaneously, has strong anti-interference capability and high sensitivity, and has good sensing characteristics.

In order to develop a film electrode for the surface acoustic wave (SAW) devices working in high temperature, harsh environments, novel AlN/Pt/ZnO multilayers were prepared using pulsed laser deposition (PLD) systems on langasite (LGS) substrates. The AlN film was used as a protective layer and the ZnO buffer layer was introduced to improve the crystal quality of Pt films. The results show that the resistances of Pt and AlN/Pt film electrodes violently increase above 600 °C and 800 °C, respectively, while the resistances of AlN/Pt/ZnO electrodes have more stable electrical resistance from room temperature to 1000 °C. The AlN/Pt/ZnO electrode, where the ZnO film was deposited at 600 °C, has the best temperature stability and can steadily work for 4 h at 1000 °C. The mechanism underlying the stable resistance of the AlN/Pt/ZnO electrode at a high temperature was investigated by analyzing the microstructure of the prepared samples. The proposed AlN/Pt/ZnO film electrode has great potential for applications in high temperature SAW sensors.