Hole transport material (HTM) plays an important role in the efficiency and stability of perovskite solar cells (PSCs). Spiro-MeOTAD, the commonly used HTM, is costly and can be easily degraded by heat and moisture, thus offering hindrance to commercialize PSCs. There is dire need to find an alternate inorganic and stable HTM to exploit PSCs with their maximum capability. In this paper, a comprehensive device simulation is used to study various possible parameters that can influence the performance of perovskite solar cell with CuI as HTM. These include the effect of doping density, defect density and thickness of absorber layer, along with the influence of diffusion length of carriers as well as electron affinity of electron transport layer (ETM) and HTM on the performance of PSCs. In addition, hole mobility and doping density of HTM is also investigated. CuI is a p-type inorganic material with low cost and relatively high stability. It is found that concentration of dopant in absorber layer and HTM, the electron affinity of HTM and ETM affect the performance of solar cell minutely, while cell performance improves greatly with the reduction of defect density. Upon optimization of parameters, power conversion efficiency for this device is found to be 21.32%. The result shows that lead-based PSC with CuI as HTM is an efficient system. Enhancing the stability and reduction of defect density are critical factors for future research. These factors can be improved by better fabrication process and proper encapsulation of solar cell.
Pentacene is a well-known conjugated organic molecule with high mobility and a sensitive photo response. It is widely used in electronic devices, such as in organic thin-film transistors (OTFTs), organic light-emitting diodes (OLEDs), photodetectors, and smart sensors. With the development of flexible and wearable electronics, the deposition of good-quality pentacene films in large-scale organic electronics at the industrial level has drawn more research attention. Several methods are used to deposit pentacene thin films. The thermal evaporation technique is the most frequently used method for depositing thin films, as it has low contamination rates and a well-controlled deposition rate. Solution-processable methods such as spin coating, dip coating, and inkjet printing have also been widely studied because they enable large-scale deposition and low-cost fabrication of devices. This review summarizes the deposition principles and control parameters of each deposition method for pentacene and its derivatives. Each method is discussed in terms of experimentation and theory. Based on film quality and device performance, the review also provides a comparison of each method to provide recommendations for specific device applications.
In this work, Co0.5Zn0.5LaxFe2-xO4 (0.00 ≤ x ≤ 0.10) spinel ferrites were synthesized using the sol-gel auto-combustion method. X-ray diffraction (XRD) analysis and Rietveld refinement confirmed the presence of a cubic spinel structure. The crystallite size was estimated to be between 17.5 nm and 26.5 nm using Scherrer’s method and 31.27 nm–54.52 nm using the Williamson–Hall (W-H) method. Lattice constants determined from XRD and Rietveld refinement ranged from (8.440 to 8.433 Å and 8.442 to 8.431 Å), respectively. Scanning electron microscopy (SEM) revealed a non-uniform distribution of morphology with a decrease in particle size. The bandgap values decreased from 2.0 eV to 1.68 eV with increasing rare earth (La3+) doping concentration. Fourier-transform infrared (FT-IR) spectroscopy confirmed the presence of functional groups and M-O vibrations. The dielectric constant and dielectric loss exhibited similar behavior across all samples. The maximum tan δ value obtained at lower frequencies. Regarding magnetic behavior, there was a decrease in magnetization from 55.84 emu/g to 22.08 emu/g and an increase in coercivity from 25.63 Oe to 33.88 Oe with higher doping concentrations. Based on these results, these materials exhibit promising properties for applications in microwave and energy storage devices.