Adsorption of organic molecules passivates defect states on single-layer MoS ₂ via charge transfer.

The pursuit of advanced brain‐inspired electronic devices and memory technologies has led to explore novel materials by processing multimodal and multilevel tailored conductive properties as the next generation of semiconductor platforms, due to von Neumann architecture limits. Among such materials, antimony sulfide (Sb₂S₃) thin films exhibit outstanding optical and electronic properties, and therefore, they are ideal for applications such as thin‐film solar cells and nonvolatile memory systems. This study investigates the conduction modulation and memory functionalities of Sb₂S₃thin films deposited via the vapor transport deposition technique. Experimental results indicate that the Ag/Sb₂S₃/Pt device possesses properties suitable for memory applications, including low operational voltages, robust endurance, and reliable switching behavior. Further, the reproducibility and stability of these properties across different device batches validate the reliability of these devices for practical implementation. Moreover, Sb₂S₃‐based memristors exhibit artificial neuroplasticity with prolonged stability, promising considerable advancements in neuromorphic computing. Leveraging the photosensitivity of Sb₂S₃enables the Ag/Sb₂S₃/Pt device to exhibit significant low operating potential and conductivity modulation under optical stimulation for memory applications. This research highlights the potential applications of Sb₂S₃in future memory devices and optoelectronics and in shaping electronics with versatility.

Here, we report an implementation of ( $8\times8$ ) $\text{Y}_{{2}}\text{O}_{{3}}$ -based memristive crossbar array (MCA) out of a total dimension of ( $30\times25$ ) array fabricated by utilizing a dual ion beam sputtering (DIBS) system. The selected ( $8\times8$ ) MCA is further used to electrically write random alphabets and perform synaptic learning characteristics to perform analog and neuromorphic computing applications. The MCA effectively exhibits multiple current levels and mimics various artificial synaptic properties with superior bidirectional switching responses. The MCA mimics potentiation, depression, and different Hebbian learning-based spike-time-dependent plasticity rules, suggesting the importance of the $\text{Y}_{{2}}\text{O}_{{3}}$ -based MCA for large-scale neuromorphic and analog computations. This work provides different insights into the design of an artificial synapse by utilizing $\text{Y}_{{2}}\text{O}_{{3}}$ as a switching oxide in memristors.