MagnetoMyoGraphy (MMG) with superconducting quantum interference devices (SQUIDs) enabled the measurement of very weak magnetic fields (femto to pico Tesla) generated from the human skeletal muscles during contraction. However, SQUIDs are bulky, costly and require working in a temperature-controlled environment, limiting wide-spread clinical use. We introduce a low-profile magnetoelectric (ME) sensor with analog frontend circuitry that has sensitivity to measure pico-Tesla MMG signals at room temperature. It comprises magnetostrictive and piezoelectric materials, FeCoSiB/AlN. Accurate device modelling and simulation are presented to predict device fabrication process comprehensively using the finite element method (FEM) in COMSOL Multiphysics®. The fabricated ME chip with its readout circuit was characterized under a dynamic geomagnetic field cancellation technique. The ME sensor experiment validate a very linear response with high sensitivities of up to 378 V/T driven at a resonance frequency of ${f_{res}}$ = 7.76 kHz. Measurements show the sensor limit of detections of down to 175 pT/Hz at resonance, which is in the range of MMG signals. Such a small-scale sensor has the potential to monitor chronic movement disorders and improve the end-user acceptance of human-machine interfaces.

In this work, we present a method for growing highly c-axis oriented aluminum scandium nitride (AlScN) thin films on (100) silicon (Si), silicon dioxide (SiO₂) and epitaxial polysilicon (poly-Si) substrates using a substrate independent approach. The presented method offers great advantages in applications such as piezoelectric thin-film-based surface acoustic wave devices where a metallic seed layer cannot be used. The approach relies on a thin AlN layer to establish a wurtzite nucleation layer for the growth of w-AlScN films. Both AlScN thin film and seed layer AlN are prepared by DC reactive magnetron sputtering process where a Sc concentration of 27% is used throughout this study. The crystal quality of (0002) orientation of Al_0.73Sc_0.27N films on all three substrates is significantly improved by introducing a 20 nm AlN seed layer. Although AlN has a smaller capacitance than AlScN, limiting the charge stored on the electrode plates, the combined piezoelectric coefficient d_33,f with 500 nm AlScN is only slightly reduced by about 4.5% in the presence of the seed layer.

Ferroelectric thin films of wurtzite-type aluminum scandium nitride (Al_1−xSc_xN) are promising candidates for non-volatile memory applications and high-temperature sensors due to their outstanding functional and thermal stability exceeding most other ferroelectric thin film materials. In this work, the thermal expansion along with the temperature stability and its interrelated effects have been investigated for Al_1−xSc_xN thin films on sapphire Al₂O₃(0001) with Sc concentrations x (x = 0, 0.09, 0.23, 0.32, 0.40) using in situ X-ray diffraction analyses up to 1100 °C. The selected Al_1−xSc_xN thin films were grown with epitaxial and fiber textured microstructures of high crystal quality, dependent on the choice of growth template, e.g., epitaxial on Al₂O₃(0001) and fiber texture on Mo(110)/AlN(0001)/Si(100). The presented studies expose an anomalous regime of thermal expansion at high temperatures >~600 °C, which is described as an isotropic expansion of a and c lattice parameters during annealing. The collected high-temperature data suggest differentiation of the observed thermal expansion behavior into defect-coupled intrinsic and oxygen-impurity-coupled extrinsic contributions. In our hypothesis, intrinsic effects are denoted to the thermal activation, migration and curing of defect structures in the material, whereas extrinsic effects describe the interaction of available oxygen species with these activated defect structures. Their interaction is the dominant process at high temperatures >800 °C resulting in the stabilization of larger modifications of the unit cell parameters than under exclusion of oxygen. The described phenomena are relevant for manufacturing and operation of new Al_1−xSc_xN-based devices, e.g., in the fields of high-temperature resistant memory or power electronic applications.

In this work, the first surface acoustic-wave-based magnetic field sensor using thin-film AlScN as piezoelectric material deposited on a silicon substrate is presented. The fabrication is based on standard semiconductor technology. The acoustically active area consists of an AlScN layer that can be excited with interdigital transducers, a smoothing SiO₂ layer, and a magnetostrictive FeCoSiB film. The detection limit of this sensor is 2.4 nT/$\sqrt{\mathrm{Hz}}$ at 10 Hz and 72 pT/$\sqrt{\mathrm{Hz}}$ at 10 kHz at an input power of 20 dBm. The dynamic range was found to span from about $\pm$1.7 mT to the corresponding limit of detection, leading to an interval of about 8 orders of magnitude. Fabrication, achieved sensitivity, and noise floor of the sensors are presented.

Monolithic integration of permanent micromagnets into MEMS structures offers many advantages in magnetic MEMS applications. A novel technique called PowderMEMS, based on the agglomeration of micron-sized powders by atomic layer deposition (ALD), has been used to fabricate permanent micromagnets on 8-inch wafers. In this paper, we report the fabrication and magnetic characterization of PowderMEMS micromagnets prepared from two different NdFeB powder particle sizes. A remanence of 423 mT and intrinsic coercivity of 924 mT is achieved at the low ALD process temperature of 75 °C, making this process compatible with MEMS technology. The magnetic reversible mechanism in the micromagnets is discussed with the help of the Wohlfarth equation. To ensure the operability of such integrated micromagnets in different application environments, we conducted a set of experiments to systematically investigate the thermal and corrosive stability. NdFeB micromagnets with larger powder particle size (d50 = 25 µm) exhibit high thermal stability in air. Furthermore, the corrosion stability of the micromagnets is significantly improved by an additional silicon oxide passivation layer deposited by plasma-enhanced chemical vapor deposition (PECVD). The presented results demonstrate the durability of PowderMEMS micromagnets, enabling their application in various fields, e.g., microfluidics, sensors, actuators, and microelectronics.

In this theoretical study, we explore the enhancement of sensing capabilities in surface acoustic wave (SAW)-based magnetic field sensors through the integration of engineered phononic crystals (PnCs). We particularly focus on amplifying the interaction between the SAW and magnetostrictive materials within the PnC structure. Through comprehensive simulations, we demonstrate the synchronization between the SAWs generated by IDTs and the resonant modes of PnCs, thereby leading to an enhancement in sensitivity. Furthermore, we investigate the ΔE effect, highlighting the sensor’s responsiveness to changes in external magnetic fields, and quantify its magnetic sensitivity through observable changes in the SAW phase velocity leading to phase shifts at the end of the delay line. Notably, our approach yields a magnetic field sensitivity of approximately $S~138\frac{°}{mT}$ for a delay line length of only 77 µm in homogeneous magnetic fields. Our findings underline the potential of PnCs to advance magnetic field sensing. This research offers insights into the integration of engineered materials for improved sensor performance, paving the way for more effective and accurate magnetic field detection solutions.