We observe and explain theoretically strain-induced spin-wave routing in the bilateral composite multilayer. By means of Brillouin light scattering and microwave spectroscopy, we study the spin-wave transport across three adjacent magnonic stripes, which are strain coupled to a piezoelectric layer. The strain may effectively induce voltage-controlled dipolar spin-wave interactions. We experimentally demonstrate the basic features of the voltage-controlled spin-wave switching. We show that the spin-wave characteristics can be tuned with an electrical field due to piezoelectricity and magnetostriction of the piezolayer and layered composite and mechanical coupling between them. Our experimental observations agree with numerical calculations.

Slow-wave structure (SWS) is a core part of a traveling-wave-tube (TWT) amplifier. In this letter, the planar microstrip meander SWS on a dielectric substrate at V-band (50-70 GHz) is studied. The basic electromagnetic parameters of the SWS are calculated. The SWS circuits are designed and fabricated, and good transmission characteristics are measured. The SWS developed is characterized by a wide bandwidth and a relatively-large slow-wave factor, and is suitable for a low-voltage TWT with the sheet electron beam.

We report the results of the design, simulation, fabrication, and cold-test measurements of millimeter-band 2D planar microstrip slow-wave structures (SWSs) on dielectric substrates. Such structures have a high slow-wave factor, which allows for low-voltage operation and reduction in the size and weight of the device. A low-cost and flexible fabrication technology based on magnetron sputtering and subsequent laser ablation has been developed and is reported in the paper. Microstrip meander-line SWS circuits at V-, W-, and D-bands have been fabricated and characterized. The fabrication of ring-bar planar SWSs by the photolithographic method is also discussed. Experimental measurement of S-parameters of the fabricated structures reveals good transmission properties. Return loss (S11) does not exceed −10 dB and attenuation is about 2 dB/cm in the V-band, 10 dB/cm in the W-band, and 8.5 dB/cm in the D-band.

The effect of electrical field control of spin-wave spectrum in the adjacent magnonic crystals stripes has been investigated by means of micromagnetic simulation, microwave spectroscopy and Brillouin light scattering (BLS) techniques. The electric field induced dipolar coupling between magnetic stripes leads to the formation of a symmetric and antisymmetric collective mode in the spectra of propagating spin waves (SWs). In particular, the strain induced variation of the spin-wave coupling length in the stripe, predicted by finite-element method with micromagnetic simulation and measured by BLS, showed the possibility of application of the lateral array of magnonic crystals as the tunable as a microwave directional coupler, power divider and spin-wave demultiplexer which can be used simultaneously as an interconnection unit in the reconfigurable magnonic networks.

Optical and electrical properties of polyelectrolyte/iron oxide nanocomposite planar films on silicon substrates were investigated for different amount of iron oxide nanoparticles incorporated in the films. The nanocomposite assemblies prepared by the layer-by-layer assembly technique were characterized by ellipsometry, atomic force microscopy, and secondary ion mass-spectrometry. Absorption spectra of the films reveal a shift of the optical absorption edge to higher energy when the number of deposited layers decreases. Capacitance–voltage and current–voltage measurements were applied to study the electrical properties of metal-oxide–semiconductor structures prepared by thermal evaporation of gold electrodes on nanocomposite films. The capacitance–voltage measurements show that the dielectric constant of the film increases with the number of deposited layers and the fixed charge and the trapped charge densities have a negative sign.

The results of the theoretical calculations of the fraction of unscattered sputtered atoms in magnetron sputtering are presented. The experimentally obtained pressure dependence of the growth rate of silicon films reveals a correlation with the theoretically calculated dependence of the fraction of unscattered sputtered atoms. If the pressure is raised from 1.5 to 8.5 mTorr, the growth rate of silicon films decreases by 25%, while the fraction of unscattered sputtered atoms over the cathode–substrate distance decreases by as much as 90%.